sot223 pnp silicon planar medium power transistor issue 4 - november 1995 features * 25 volt v ceo * 3 amp continuous current * low saturation voltage * excellent h fe specified up to 6a (pulsed). complementary type ? fzt649 partmarking detail ? FZT749 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5 v peak pulse current i cm -8 a continuous collector current i c -3 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. breakdown voltages v (br)cbo -35 v i c =-100 m a v (br)ceo -25 v i c =-10ma* v (br)ebo -5 v i e =-100 m a collector cut-off currents i cbo -0.1 -10 m a m a v cb =-30v v cb =-30v, t amb =100c i ebo -0.1 m a v eb =4v saturation voltages v ce(sat) -0.12 -0.40 -0.3 -0.6 v v i c =-1a, i b =-100ma* i c =-3a, i b =-300ma* v be(sat) -0.9 -1.25 v i c =-1a, i b =-100ma* base-emitter turn-on voltage v be(on) -0.8 -1.0 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 70 100 75 15 200 200 150 50 300 i c =-50ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* i c =-6a, v ce =-2v* transition frequency f t 100 160 mhz i c =-100ma, v ce =-5v f=100mhz output capacitance c obo 55 100 pf v cb =-10v f=1mhz switching times t on 40 ns i c =-500ma, v cc =-10v i b1 =i b2 =-50ma t off 450 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT749 FZT749 c c e b typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v ol t s) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - g ain v - (v o l t s) v - ( v ol t s) i - co ll ecto r cu rre n t (amp s) v ce - collector voltage (volts) safe operating area 110100 0.01 0.1 1.0 single pulse test at t amb =25c 40 80 120 160 200 switching speeds i c - collector current (amps) s w i tchi n g tim e 0.1 1 i b1 =i b2 =i c /10 0.01 ts tf td tr 0.001 1 0.01 0.1 ts ns 600 200 1000 1200 td tr tf ns 80 40 120 160 0 140 100 60 20 v ce =2v i c /i b =10 v ce =2v v ce =-10v 0.6 1.0 1.2 0.8 0.4 0.6 1.0 1.2 0.8 0.4 0.2 0.6 1.0 0.8 0.4 0.001 1 0.01 0.1 10 i c /i b =100 0.001 1 0.01 0.1 10 0 1.2 1.6 1.8 1.4 i c /i b =100 i c /i b =10 0.001 1 0.01 0.1 10 10 10 d.c. 1s 100ms 10ms 1.0ms 100 m s 3 - 232 3 - 233
sot223 pnp silicon planar medium power transistor issue 4 - november 1995 features * 25 volt v ceo * 3 amp continuous current * low saturation voltage * excellent h fe specified up to 6a (pulsed). complementary type ? fzt649 partmarking detail ? FZT749 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5 v peak pulse current i cm -8 a continuous collector current i c -3 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. breakdown voltages v (br)cbo -35 v i c =-100 m a v (br)ceo -25 v i c =-10ma* v (br)ebo -5 v i e =-100 m a collector cut-off currents i cbo -0.1 -10 m a m a v cb =-30v v cb =-30v, t amb =100c i ebo -0.1 m a v eb =4v saturation voltages v ce(sat) -0.12 -0.40 -0.3 -0.6 v v i c =-1a, i b =-100ma* i c =-3a, i b =-300ma* v be(sat) -0.9 -1.25 v i c =-1a, i b =-100ma* base-emitter turn-on voltage v be(on) -0.8 -1.0 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 70 100 75 15 200 200 150 50 300 i c =-50ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* i c =-6a, v ce =-2v* transition frequency f t 100 160 mhz i c =-100ma, v ce =-5v f=100mhz output capacitance c obo 55 100 pf v cb =-10v f=1mhz switching times t on 40 ns i c =-500ma, v cc =-10v i b1 =i b2 =-50ma t off 450 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT749 FZT749 c c e b typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v ol t s) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - g ain v - (v o l t s) v - ( v ol t s) i - co ll ecto r cu rre n t (amp s) v ce - collector voltage (volts) safe operating area 110100 0.01 0.1 1.0 single pulse test at t amb =25c 40 80 120 160 200 switching speeds i c - collector current (amps) s w i tchi n g tim e 0.1 1 i b1 =i b2 =i c /10 0.01 ts tf td tr 0.001 1 0.01 0.1 ts ns 600 200 1000 1200 td tr tf ns 80 40 120 160 0 140 100 60 20 v ce =2v i c /i b =10 v ce =2v v ce =-10v 0.6 1.0 1.2 0.8 0.4 0.6 1.0 1.2 0.8 0.4 0.2 0.6 1.0 0.8 0.4 0.001 1 0.01 0.1 10 i c /i b =100 0.001 1 0.01 0.1 10 0 1.2 1.6 1.8 1.4 i c /i b =100 i c /i b =10 0.001 1 0.01 0.1 10 10 10 d.c. 1s 100ms 10ms 1.0ms 100 m s 3 - 232 3 - 233
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