1/5 preliminary data may, 3 2002 START620 npn sige rf transistor sot343 (sc70) order code START620tr branding 620 applications ? lna for gsm/dcs, cdma, wcdma, bluetooth ? general purpose 500mhz-5ghz ? low noise figure: nfmin = 0.8db @ 1.8ghz, 5ma, 2v ? compression p1db = 13dbm @ 1.8ghz, 20ma, 2v ? ultra miniature sot343 package description the START620 is a member of the start family that provide market with the state of the art of rf silicon process. it uses sts silicon germanium technology. this technology offers fts of up to 45ghz and fmaxs of over 60ghz. the START620 offers the best mix of gain and nf for given breakdown voltage(bvceo = 3.3v). it reaches performance level only achieved with gaas products before. absolute maximum ratings symbol parameter value unit v ceo collector emitter voltage 3.3 v v cbo collector base voltage 10 v v ebo emitter base voltage 1.5 v i c collector current 40 ma i b base current 4 ma p tot total dissipation, t s = 101 135 mw t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c r thjs thermal resistance junction soldering point 270 o c/w absolute maximum ratings
START620 2/5 sot343 4 12 3 top vie w note(1): gms = | s 21 / s 12 | symbol parameter test conditions min. typ. max. unit i cbo collector cutoff current vcb = 8v, ie = 0a 150 na i ebo emitter-base cutoff current veb = 1.5v, ic = 0a 15 m a hfe dc current gain ic = 20ma, vce = 2v 100 nfmin minimim noise figure ic = 5ma, vce = 2v, f = 1.8ghz, z s = z s opt 0.8 db ga nfmin associated gain ic = 5ma, vce = 2v, f = 1.8ghz 14.5 db |s21| 2 insertion power gain ic = 20ma, vce = 2v, f = 1.8ghz 16.2 db gms (1) maximum stable gain ic = 20ma, vce = 2v, f = 1.8ghz 18.6 db p -1db 1db compression point ic = 20ma,vce = 2v, f = 1.8ghz 13 dbm oip3 ouput third order intercept point ic = 20ma,vce = 2v, f = 1.8ghz 23 dbm electrical characteristics (t j =25 o c,unless otherwise specified) pinout pin connection pin no. description 1base 3 collector 2,4 emitter
3/5 START620 common emitter s-parameters ( v ce = 2v, i c = 20ma ) freq is 11 iis 21 iis 12 is 12 ef is 22 is 22 ef (mhz) 0.1 0.505 -21 35.490 163 0.009 80 0.940 -14 0.5 0.322 -69 19.713 134 0.030 84 0.611 -38 0.9 0.245 -88 12.607 130 0.048 100 0.484 -43 1 0.237 -92 11.751 130 0.052 102 0.470 -44 1.5 0.193 -97 7.564 133 0.071 118 0.430 -46 1.8 0.188 -95 6.534 139 0.088 127 0.443 -48 2 0.190 -89 5.834 144 0.093 133 0.449 -49 2.5 0.218 -76 4.639 154 0.109 148 0.497 -55 3 0.219 -86 3.688 165 0.160 170 0.455 -66 3.5 0.209 -80 3.537 172 0.181 174 0.412 -73 4 0.195 -89 3.006 180 0.200 173 0.355 -80 s 11 ef s 21 ef
START620 4/5 package dimensions sot343 (sc-70 4 leads) 2.00-2.20 1.90-2.10 1.15-1.35 1.15 0.55-0.65 1.30 0.25-0.35 0.00-0.10 0.80-1.00 1.15-1.35 0.10-0.20 0.45
5/5 START620 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. htt p ://www.st.com
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