s m d ty p e w w w . k e x i n . c o m . c n 1 m os f e t n- ch an n el m osf et s i9410dy ( k i 9 4 1 0 d y ) f e a tu r e s v d s ( v ) = 3 0 v i d = 7 a ( v g s = 1 0 v ) r d s ( o n ) 3 0 m ( v g s = 1 0 v ) r d s ( o n ) 4 0 m ( v g s = 5 v ) r d s ( o n ) 5 0 m ( v g s = 4 . 5 v ) sop -8 0.21 +0.04 -0.02 1.50 0.15 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain d d d g s s d a b s o l u te m a x i m u m ra ti n g s t a = 2 5 s y m b o l r a t i n g u n i t v d s 3 0 v g s 2 0 t a = 2 5 7 t a = 7 0 5.8 i d m 3 0 t a = 2 5 2 . 5 t a = 7 0 1 . 6 r t h ja 5 0 / w t j 1 5 0 t st g - 5 5 t o 1 5 0 j u n c t i o n t e m p e r a t u r e s t o r a g e t e m p e r a t u r e r a n g e p d w p o w e r d i s s i p a t i o n ( n o t e . 1 ) t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t v a p u l s e d d r a i n c u r r e n t p a r a m e t e r c o n t i n u o u s d r a i n c u r r e n t ( n o t e . 1 ) i d d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e n o t e . 1 : s u r f a c e m o u n t e d o n f r 4 b o a r d , t 1 0 s e c . s
s m d ty p e w w w . k e x i n . c o m . c n 2 m os f e t n- ch an n el m osf et s i9410dy ( k i 9 4 1 0 d y ) e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 n o t e . 1 : p u l s e t e s t ; p u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % . p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 2 5 0 a , v g s = 0 v 3 0 v v d s = 2 4 v , v g s = 0 v 2 v d s = 2 4 v , v g s = 0 v , t j = 5 5 2 5 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 2 0 v 1 0 0 n a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v d s = v g s , i d = 2 5 0 a 1 3 v v g s = 1 0 v , i d = 7 a ( n o t e . 1 ) 3 0 v g s = 5 v , i d = 4 a ( n o t e . 1 ) 4 0 v g s = 4 . 5 v , i d = 3 . 5 a ( n o t e . 1 ) 5 0 o n - s t a t e d r a i n c u r r e n t i d s ( o n ) v d s 5 v , v g s = 1 0 v 3 0 a f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 1 5 v , i d = 7 a ( n o t e . 1 ) 1 5 s t o t a l g a t e c h a r g e q g 2 4 5 0 g a t e s o u r c e c h a r g e q g s 2 . 8 g a t e d r a i n c h a r g e q g d 4 . 6 t u r n - o n d e l a y t i m e t d ( o n ) 1 4 3 0 t u r n - o n r i s e t i m e t r 1 0 6 0 t u r n - o f f d e l a y t i m e t d ( o f f ) 4 6 1 5 0 t u r n - o f f f a l l t i m e t f 1 7 1 4 0 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r i f = 2 a , d i / d t = 1 0 0 a / s 6 0 m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t i s 2 . 8 a d i o d e f o r w a r d v o l t a g e v s d i s = 2 a , v g s = 0 v ( n o t e . 1 ) 1 . 1 v n c n s z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s a m v g s = 1 0 v , v d s = 2 5 v , r l = 2 5 , r g e n = 6 i d = 1 a r d s ( o n ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e v g s = 1 0 v , v d s = 1 5 v , i d = 7 a m a r k i n g 9 4 1 0 k c * * * * m a r k i n g
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t n- ch an n el m osf et s i9410dy ( k i 9 4 1 0 d y ) t y p i c a l ch a r a c te r i s i ti c s outpu t s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c gate charg e on-resistance vs. drain curren t v d s - drain-to-source v oltage (v ) - drain current (a ) i d v g s - gate-to-source v oltage (v ) - drain current (a ) i d - gate-to-source v oltage (v ) q g - t o t al g a t e charge (nc ) v d s - drain-to-source v oltage (v ) c - capacitance (pf ) v gs - on-resistance ( r ds(on) ) i d - drain current (a ) capacitance on-resistance vs. junction t emperature t j - junction t emperature ( c) (normalized) - on-resistance ( r ds(on) ) 0 5 10 15 20 25 30 0 2 4 6 8 10 0 2 4 6 8 10 0 5 10 15 20 25 0.0 0.4 0.8 1.2 1.6 2.0 - 50 - 25 0 25 50 75 100 125 150 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 0 400 800 1200 1600 2000 2400 0 5 10 15 20 25 30 0 5 10 15 20 25 30 0 1 2 3 4 5 - 55 c 2 v 3 v 10 v v g s = 4.5 v c rs s c o s s c i s s v d s = 15 v i d = 7 a v g s = 10 v i d = 7 a t c = 12 5 c 25 c v g s = 10, 9, 8, 7, 6, 5 v 4 v
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t . n- ch an n el m osf et s i9410dy ( k i 9 4 1 0 d y ) t y p i c a l ch a r a c te r i s i ti c s source-drain diode forward v oltage on-resistance vs. gate-to-source v oltage threshold v oltage single pulse powe r n o rma li ze d th erma l t ra n s i e n t i m p e d a n ce , j un ct ion -t o -am bi e n t squar e w ave pulse duration (sec ) normalized e f fective t ransient thermal impedanc e - on-resistance ( r ds(on) ) v s d v ) v ( e g a t l o v n i a r d - o t - e c r u o s - g s - gate-to-source v oltage (v ) - source current (a ) i s t j - t emperature ( ) c e s ( e m i t ) c p owe r (w ) 0 1 0.6 10 30 0.8 1.0 1.2 0.4 0.2 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 2 4 6 8 10 - 0.8 - 0.4 0.0 0.4 - 50 - 25 0 25 50 75 100 125 150 t j = 15 0 c i d = 3.2 a 0 0.1 40 50 10 20 30 1 10 30 2 1 0.1 0.01 10 - 3 10 - 2 1 10 30 10 - 1 duty cycle = 0. 5 0.2 0.1 0.05 0.02 s ingle p uls e 1. duty cycle, d = 2. per unit base = r t h j a = 50 c/w 3. t j m - t a = p d m z t h j a ( t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p d m i d = 25 0 a 0.01 10 - 4 v arian c e ( v ) v gs(th) 60 70 1.4 25 c
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