smd type ic www.kexin.com.cn 1 smd type transistors 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 1gate 2drain 3 source 250v n-channel mosfet KQB6N25 features 5.5a, 500 v. r ds(on) =1 @v gs =10v low gate charge (typical 6.6nc) low crss(typical 7.5pf) fast switching 100% avalanche tested lmproved dv/dt capability absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 250 v drain current continuous (t c =25 ) 5.5 a drain current continuous (t c =100 ) 3.5 a drain current pulsed *1 i dm 22 a gate-source voltage v gss 30 v single pulsed avalanche energy*2 e as 75 mj avalanche current *1 i ar 5.5 a repetitive avalanche energy *1 e ar 6.3 mj peak diode recovery dv/dt *3 d v /d t 5.5 v/ns power dissipation @ t a =25 p d 3.13 w power dissipation @ t c =25 63 w derate above 25 0.5 w/ operating and storage temperature t j ,t stg -55 to150 maximum lead temperature for soldering purposes,1/8" from case for 5 seconds t l 300 thermal resistance junction to case r jc 1.98 /w thermal resistance junction to ambient *4 r ja 40 /w thermal resistance junction to ambient r ja 62.5 /w *1 repetitive rating:pulse width limited by maximum junction temperature *2 l=4.0mh,i as =5.5a,v dd =50v,r g =25 ,startion t j =25 *3 i sd 5.5a,d i /d t 300a/ s,v dd b vdss ,startiong t j =25 *4 when mounted on the minimum pad size recommended (pcb mount) i d p d
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage b vdss v gs =0v,i d = 250 a 250 v breakdown voltage temperature coefficient i d = 250 a, referenced to 25 0.19 mv/ v ds = 250 v, v gs =0v 1 a v ds = 200 v, t c =125 10 a gate-body leakage current,forward i gssf v gs =30v,v ds =0v 100 na gate-body leakage current,reverse i gssr v gs =-30 v, v ds =0v -100 na gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 3.0 5.0 v static drain-source on-resistance r ds(on) v gs =10v,i d = 2.75a 0.82 1.0 forward transconductance g fs v ds =50v,i d = 2.75a * 2.6 s input capacitance c iss 230 300 pf output capacitance c oss 50 65 pf reverse transfer capacitance c rss 7.5 10 pf turn-on delay time t d(on) 825ns turn-on rise time tr 65 140 ns turn-off delay time t d(off) 7.5 25 ns turn-off fall time t f 30 70 ns total gate charge q g 6.6 8.5 nc gate-source charge q gs 1.74 nc gate-drain charge q gd 3.4 nc maximum continuous drain-source diode forwrad current i s 5.5 a maximum pulsed drain-source diode forward current i sm 22 a drain-source diode forward voltage v sd v gs =0v,i s = 5.5 a 1.5 v diode reverse recovery time t rr 125 ns diode reverse recovery current q rr 0.5 c * pulse test: pulse width 300 s, duty cycle 2.0% v gs =0v,d if /d t = 100 a/ s,i s =5.5a* i dss zero gate voltage drain current v ds = 200 v, i d =5.5a,v gs =10v* v dd = 125 v, i d = 5.5a,rg=25 * v ds =25v,v gs =0v,f=1.0mhz KQB6N25
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