dm t6016l ps advanced information 60v n - channel enhancement mode mosfet powerdi ? product summary v (br)dss r ds(on) i d t a = + 25c 60v 16 m? @ v m? @ v description this mosfet is designed to minimize the on - state resistance (r ds(on ) ) and maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? load switch ? adaptor switch ? notebook pc features ? thermally efficient package - cooler running applications ? high conversion efficiency ? low rds( on ) ? minimizes on state losses ? low input capacitance ? fast switching speed ? <1.1mm package profile ? ideal for thin applications ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. ?green? device (note 3 ) mechanical data ? case: p ower di5060 - 8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram below ? ordering information (note 4 ) part number case packaging dm t 6 016 l ps - 13 p ower di5060 - 8 2 , 500 / tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporated?s definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http : //www.diodes.com/products/packages.html . marking information bottom view t op view pin configuration top view internal schematic p ower di5060 - 8 pin1 s d d g d d s s t6 0 16l s s s s g d d d d yy ww =manufacturer ? s marking t6016ls = product type marking code yyww = date code marking yy = last digit of year (ex: 1 4 = 201 4 ) ww = week code (01 to 53) d s g www.diodes.com september 2014 ? diodes incorporated
dm t6016l ps advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 60 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10v steady state t a = +25c t a = +70c i d 10.6 8.5 a t < 10s t a = +25c t a = +70c i d 14.8 11.9 a pulsed drain curren t ( 10 thermal characteristics characteristic symbol value units total power dissipation (note 5 ) p d 1.23 w thermal resistance, junction to ambient (note 5 ) s teady state r ja 102 c/w t<10s 52 total power dissipation (note 6 ) p d 2.7 w thermal resistance, junction to ambient (note 6 ) s teady state r ja 49 c/w t<10s 24 thermal resistance, junction to case (note 6 ) r electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 6 0 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 1 a v ds = 48 v, v gs = 0v gate - source leakage i gss ? ? 1 00 n a v gs = on characteristics (note 8 ) gate threshold voltage v gs(th) 1 ? 2.5 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) ? ? 1 6 m v gs = 10 v, i d = 10 a ? ? 24 v gs = 4 .5 v, i d = 6 a diode forward voltage v sd ? 0. 7 1 .2 v v gs = 0v, i s = 1 a dynamic characteristics (note 9 ) input capacitance c iss ? 8 64 ? pf v ds = 30 v, v gs = 0v , f = 1 mhz output capacitance c oss ? 2 82 ? reverse transfer capacitance c rss ? 27 ? gate resistance r g ? 1.3 ? v ds = 30v, i d = 10a total gate charge ( v gs = 10 v ) q g ? 17 ? gate - source charge q gs ? 3.1 ? gate - drain charge q gd ? 4.3 ? turn - on delay time t d(on) ? 3. 4 ? ns v gs = 10 v , v ds = 30v , r g = 6 , i d = 10 a turn - on rise time t r ? 5. 2 ? turn - off delay time t d(off) ? 13 ? turn - off fall time t f ? 7 ? reverse recovery time t rr ? 22 ? ns i f = 10 a, di/dt = 10 0a/ s reverse recovery charge q rr ? 11 ? n c notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1inch square copper plate . 7 . i a s and e a s rating are based on low frequency and duty cycles to keep t j = + 25 c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing. dm t6016l ps document number: ds 37218 rev. 4 - 2 2 of 7 www.diodes.com september 2014 ? diodes incorporated
dm t6016l ps advanced information v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0 30.0 0 1 2 v = 3.0v gs v = 3.5v gs v = 4.0v gs v = 4.5v gs v = 10v gs 3 4 5 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 3 6 9 12 15 18 21 24 27 30 1.5 2 2.5 3 3.5 4 4.5 5 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 6a gs d v =v i = 10a gs d 10 t , junction temperature ( c) figure 6 on-resistance variation with temperature j r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? www.diodes.com september 2014 ? diodes incorporated
dm t6016l ps advanced information t , junction temperature ( c) figure 7 gate threshold variation vs. ambient temperature j v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 125c a 0 3 6 9 12 15 18 21 24 27 30 0 0.3 0.6 0.9 1.2 1.5 t = 150c a t = -55c a t = 25c a t = 85c a v , drain-source voltage (v) ds figure 9 typical drain-source leakage current vs. voltage i , d r a i n l e a k a g e c u r r e n t ( n a ) d s s 0.1 1 10 100 1000 10000 0 5 10 15 20 25 30 t = 25c a t = 85c a t = 125c a t = 150c a v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c ap ac i t an c e ( p f ) t 1 10 100 c iss 1000 c oss c rss 10000 0 5 10 15 20 25 30 35 40 q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 v = 30v i= a ds d 10 v , drain-source voltage (v) figure 12 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d 0.01 0.1 1 10 100 0.01 0.1 1 10 100 t = 150c t = 25c v = 10v single pulse j(max) a gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w r limited ds(on) dm t6016l ps document number: ds 37218 rev. 4 - 2 4 of 7 www.diodes.com september 2014 ? diodes incorporated
dm t6016l ps advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r r = 102c/w duty cycle, d = t1/ t2 ? ja ja ja 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 powerdi5060 - 8 dim min max typ a 0. 90 1.10 1.00 a1 0 0.05 0.02 b 0. 33 0. 51 0. 41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 d 5.15 bsc d1 4.85 4.95 4.90 d2 1.40 1.60 1.50 d3 - - 3.98 e 6.15 bsc e1 5.75 5.85 5.80 e2 3.56 3.76 3.66 e 1.27bsc k - - 1.27 k1 0.56 - - l 0. 51 0. 71 0. 61 la 0. 51 0. 71 0. 61 l1 0.05 0.20 0.175 l4 - - 0.125 m 3.50 3.71 3.605 x - - 1.400 y - - 1.900 10 12 11 1 6 8 7 all dimensions in mm detail a 0( 4x) seating plane a1 c e 01( 4x) d1 e1 d e 1 y x ?1.000 depth 0.070.030 a detail a l k m l1 d2 la e2 b( 8x) e/2 1 b1( 8x) b2( 2x) d2 k1 d3 l4 dm t01l ps dcent nbe ds 37218 e. 4 2 7 www.diodes.com september 2014 ? diodes incorporated
dm t6016l ps advanced information suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 3.910 x2 1.650 x3 1.650 x4 4.420 y 1.270 y1 1.020 y2 3.810 y3 6.610 1 8 y3 x4 y1 y2 x1 g1 x c y( 4x) g x2 x3 dm t6016l ps document number: ds 37218 rev. 4 - 2 6 of 7 www.diodes.com september 2014 ? diodes incorporated
dm t6016l ps advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized a pplication. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. t his document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products ar e specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 4 , diodes incorporate d www.diodes.com dm t6016l ps document number: ds 37218 rev. 4 - 2 7 of 7 www.diodes.com september 2014 ? diodes incorporated
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