? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. BSS84 sot-23 w (sot-23 field effect transistors) p p p p -channel -channel -channel -channel enhancement-mode enhancement-mode enhancement-mode enhancement-mode mos mos mos mos fets fets fets fets p p p p ? mos mos mos mos ? maximum maximum maximum maximum ratings ratings ratings ratings ~? thermal thermal thermal thermal characteristics characteristics characteristics characteristics characteristic ? symbol ? max ? unit drain - source voltage ? O - ? O? b v dss -50 v gate - source voltage ? O - ? O? v gs + 2 0 v drain current (continuous) ? O - Bm i dr -130 ma drain current (pulsed) ? O - i drm -52 0 ma characteristic symbol ? max ? unit total device dissipation ? t a = 25 h?? 25 derate above25 ^ 25 fp p d 2 00 1.8 mw mw/ thermal resistance junction to ambient r ja 350 /w junct io n and storage temperature Y??? t j , t stg 150 , -55to+150
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. BSS84 device device device device marking marking marking marking electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t a =25 unless otherwise noted of?? 25 ) 1. fr-5=1.0 0.75 0.062in. 2. alumina=0.4 0.3 0.024in.99.5%alumina. 3. pulse width < 300 s; duty cycle < 2.0%. BSS84 BSS84 BSS84 BSS84 = = = = sp sp sp sp characteristic ? symbol ? min ? typ ? max ? unit drain - source breakdown voltage ? O - ? O? ( i d = - 25 0 u a , v gs =0 v ) b v dss -5 0 v gate threshold voltage ? O _ ? ( i d = - 25 0 u a , v gs = v ds ) v gs ( th ) - 1. 0 - 2.5 v diode forward voltage drop ? O ( i sd = - 200m a , v gs =0 v ) v sd - 1 . 5 v zero gate voltage drain current ? ? O (v gs = 0 v, v ds = -50v ) (v gs = 0 v, v ds = -50v , t a = 12 5 ) i dss -15 -6 0 u a gate body leakage ? O ? (v gs = + 20 v, v ds = 0 v) i gss + 10 n a static drain-source on-state resistance ??? ? ( i d = -10 0 m a , v gs = - 5v ) r ds ( on ) 10 input capacitance ? (v gs = 0 v, v ds = - 25 v, f=1 mhz) c iss 73 pf common source output capacitance ? ? (v gs = 0 v, v ds = - 25 v, f=1 mhz) c oss 10 pf turn-on time rg (v ds = - 30 v, i d = - 2 7 0ma , r gen = 6 ) t (on) 5 ns turn-off time ? rg (v ds = - 30 v, i d = - 2 7 0ma , r gen = 6 ) t (off) 2 0 ns reverse recovery time ? rg ( i sd = -1 00ma , v gs =0v) t rr 1 0 ns
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. BSS84 dimension dimension dimension dimension b? (unit) mm
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