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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. january 2013 doc id 023239 rev 1 1/17 17 STL38N65M5 n-channel 650 v, 0.090 typ., 22.5 a mdmesh? v power mosfet in a powerflat? 8x8 hv package datasheet ? preliminary data features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description this device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order code v ds @ t jmax r ds(on) max i d STL38N65M5 710 v 0.105 22.5 a (1) 1. the value is rated according to r thj-case and limited by package. 6 6 6 * ' 3rzhu)/$7?[+9 %rwwrpylhz $0yb[ ' * 6 table 1. device summary order code marking package packaging STL38N65M5 38n65m5 powerflat? 8x8 hv tape and reel www.st.com
contents STL38N65M5 2/17 doc id 023239 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STL38N65M5 electrical ratings doc id 023239 rev 1 3/17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 650 v v gs gate-source voltage 25 v i d (1) 1. the value is rated according to r thj-case. and limited by package. drain current (continuous) at t c = 25 c 22.5 a i d (1) drain current (continuous) at t c = 100 c 16 a i dm (1),(2) 2. pulse width limited by safe operating area. drain current (pulsed) 90 a i d (3) 3. when mounted on fr-4 board of inch2 , 2oz cu. drain current (continuous) at t amb = 25 c 3.5 a i d (3) drain current (continuous) at t amb = 100 c 2.2 a p tot (3) total dissipation at t amb = 25 c 2.8 w p tot (1) total dissipation at t c = 25 c 150 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 7a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 660 mj dv/dt (4) 4. i sd 22.5 a, di/dt 400 a/ s, v ds(peak) < v (br)dss, v dd = 400 v . peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.83 c/w r thj-amb (1) 1. when mounted on fr-4 board of inch2 , 2oz cu. thermal resistance junction-ambient max 45 c/w
electrical characteristics STL38N65M5 4/17 doc id 023239 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 345v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 12.5 a 0.090 0.105 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 3000 74 5.8 - pf pf pf c o(er) (1) 1. c o(er) is a constant capacitanc e value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss equivalent output capacitance energy related v gs = 0, v ds = 0 to 80% v (br)dss -70-pf c o(tr) (2) 2. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss equivalent output capacitance time related - 244 - pf r g intrinsic gate resistance f = 1 mhz open drain - 2.4 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 15 a, v gs = 10 v (see figure 16 ) - 71 18 30 - nc nc nc
STL38N65M5 electrical characteristics doc id 023239 rev 1 5/17 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(v) t r(v) t f(i) t c(off) voltage delay time voltage rise time crossing fall time crossing time v dd = 400 v, i d = 20 a, r g = 4.7 , v gs = 10 v (see figure 20 ) - 66 9 9 13 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd (1) i sdm (1)(2) 1. the value is rated according to r thj-case. and limited by package 2. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 22.5 90 a a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 22.5 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22.5 a, di/dt = 100 a/ s v dd = 100 v (see figure 17 ) - 354 6 34 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22.5 a, di/dt = 100 a/ s v dd = 100 v, t j = 150 c (see figure 17 ) - 428 8 38 ns c a
electrical characteristics STL38N65M5 6/17 doc id 023239 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c sinlge pulse am14743v1 10 -5 10 -4 10 -3 10 -2 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 single pulse =0.5 zth powerflat 8x8 hv i d 40 20 0 0 10 v ds (v) 20 (a) 5 15 25 60 80 v gs = 6 v v gs = 8 v v gs = 7 v v gs = 10 v am12637v1 i d 40 20 0 3 5 v gs (v) 7 (a) 4 6 8 60 80 v ds = 25v am12638v1 v gs 6 4 2 0 0 q g (nc) (v) 60 8 20 40 10 v dd =520v i d =15a 80 12 300 200 100 0 400 500 v ds (v) v ds am14746v1 r ds(on) 0.090 0.085 0.080 0.075 0 10 i d (a) ( ) 5 15 0.095 0.10 v gs =10v 20 am14747v1
STL38N65M5 electrical characteristics doc id 023239 rev 1 7/17 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized v ds vs temperature c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss am12641v1 e oss 6 4 2 0 0 100 v ds (v) (j) 400 8 200 300 10 12 500 600 14 am12642v1 i d = 250 a v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 am05459v1 v gs = 10 v i d = 12 a r ds(on) 1.7 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 am05460v1 v sd 0 20 i sd (a) (v) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 i d = 1ma 1.08 am10399v1
electrical characteristics STL38N65M5 8/17 doc id 023239 rev 1 figure 14. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode. e 300 200 100 0 0 20 r g ( ) ( j) 10 30 400 500 600 40 i d =20a v dd =400v l=50h eon eoff am12643v1
STL38N65M5 test circuits doc id 023239 rev 1 9/17 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am05540v2 id vgs vds 90%vds 10%id 90%vgs on tdelay-off tfall trise tcross -over 10%vds 90%id vgs(i(t)) on -off tfall trise - )) concept waveform for inductive load turn-off
package mechanical data STL38N65M5 10/17 doc id 023239 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STL38N65M5 package mechanical data doc id 023239 rev 1 11/17 table 8. powerflat? 8x8 hv mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0.00 0.02 0.05 b 0.95 1.00 1.05 d8.00 e8.00 d2 7.05 7.20 7.30 e2 4.15 4.30 4.40 e2.00 l 0.40 0.50 0.60 aaa 0.10 bbb 0.10 ccc 0.10
package mechanical data STL38N65M5 12/17 doc id 023239 rev 1 figure 21. powerflat? 8x8 hv drawing mechanical data index area top view plane seating 0.08 c bottom view side view pin#1 id d e b a e2 d2 l 0.40 0.20 0.008 c bbb c a b b a aaa c aaa c a1 ccc c 8222871_rev_b
STL38N65M5 package mechanical data doc id 023239 rev 1 13/17 figure 22. powerflat? 8x8 hv recommended footprint 7.30 1.05 2.00 7.70 4.40 0.60 footprint
packaging mechanical data STL38N65M5 14/17 doc id 023239 rev 1 5 packaging mechanical data figure 23. powerflat? 8x8 hv tape figure 24. powerflat? 8x8 hv package orientation in carrier tape. w (16.000.3) e (1.750.1) f (7.500.1) a0 (8.300.1) p1 (12.000.1) p2 (2.00.1) p0 (4.00.1) d0 ( 1.550.05) d1 ( 1.5 min) t (0.300.05) b0 (8.300.1) k0 (1.100.1) note: base and bulk quantity 3000 pcs 8229819_tape_reva
STL38N65M5 packaging mechanical data doc id 023239 rev 1 15/17 figure 25. powerflat? 8x8 hv reel 8229819_reel_reva
revision history STL38N65M5 16/17 doc id 023239 rev 1 6 revision history table 9. document revision history date revision changes 17-jan-2013 1 first release.
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