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november 2014 docid024027 rev 4 1 / 19 this is information on a product in full production. www.st.com sth110n10f7 - 2, sth110n10f7 - 6 n - channel 100 v, 4.9 m typ.,110 a, stripfet? f7 power mosfets in h2pak - 2 and h2pak - 6 packages datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d p tot sth110n10f7 - 2 100 v 6.5 m 110 a 150 w sth110n10f7 - 6 ? among the lowest r ds(on) on the market ? excellent figure of merit (fom) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness applications ? switching applications description these n - channel power mosfets utilize stripfet? f7 technology with an enhanced trench gate structure that results in very low on - resistance, while also reducing internal capacitance and gate charge for faster and more efficient switchin g. table 1: device summary order code marking package packing sth110n10f7 - 2 110n10f7 h 2 pak - 2 tape and reel sth110n10f7 - 6 h 2 pak - 6 s(2,3,4,5,6,7) h 2 p ak-2 h 2 p ak-6 t ab t ab 1 2 3 1 7
contents sth110n10f7 - 2, sth110n10f7 - 6 2 / 19 docid024027 rev 4 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 h 2 pa k - 2 package information ................................ ......................... 10 4.2 h 2 pak - 6 package information ................................ ......................... 13 4.3 packing information ................................ ................................ ......... 16 5 revision history ................................ ................................ ............ 18
sth110n10f7 - 2, sth110n10f7 - 6 electrical ratings docid024027 rev 4 3 / 19 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 100 v v gs gate - source voltage 20 v i d (1) drain current (continuous) at t c = 25 c 110 a i d (1) drain current (continuous) at t c = 100 c 76 a i d (2) drain current (continuous) at t pcb = 25 c 18 a i d (2) drain current (continuous) at t pcb = 100 c 13 a i dm (3) drain current (pulsed) 430 a p tot (1) total dissipation at t c = 25 c 150 w e as (4) single pulse avalanche energy 490 mj t j operating junction temperature - 55 to 175 c t stg storage temperature c notes: (1) this value is rated according to r thj - c (2) this value is rated according to r thj - pcb (3) pulse width limited by safe operating area (4) starting t j = 25 c, i d = 18, v dd = 50 v table 3: thermal resistance symbol parameter value unit r thj - case thermal resistance junction - case 1 c/w r thj - pcb (1) thermal resistance junction - pcb 35 c/w notes: (1) when mounted on fr - 4 board of 1 inch2, 2 oz cu
electrical characteristics sth110n10f7 - 2, sth110n10f7 - 6 4 / 19 docid024027 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4: on/off - state symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage (v gs = 0) i d = 250 a 100 v i dss zero gate voltage drain current (v gs = 0) v ds = 100 v 1 a v ds = 100 v; t c = 125 c 10 0 a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 4.5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 55 a 4.9 6.5 m table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 5117 - pf c oss output capacitance 992 pf c rss reverse transfer capacitance 39 pf q g total gate charge v dd = 50 v, i d = 110 a v gs = 10 v see figure 14: "gate charge test circuit" 72 nc q gs gate - source charge 31 nc q gd gate - drain charge 16 nc table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 50 v, i d = 55 a, r g = 4.7 , v gs = 10 v see figure 13: "switching times test circuit for resistive load" - 25 - ns t r rise time 36 ns t d(off) turn - off delay time 52 ns t f fall time 21 ns
sth110n10f7 - 2, sth110n10f7 - 6 electrical characteristics docid024027 rev 4 5 / 19 table 7: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 110 a i sdm (1) source - drain current (pulsed) 430 a v sd (2) forward on voltage i sd = 55 a, v gs = 0 1.2 v t rr reverse recovery time i sd = 110 a, di/dt = 100 a/s, v dd = 80 v, t j = 150 c 77 ns q rr reverse recovery charge 150 nc i rrm reverse recovery current 4.3 a notes: (1) pulse width limited by safe operating area (2) pulsed: pulse duration = 300 s, duty cycle 1.5%
electrical characteristics sth110n10f7 - 2, sth110n10f7 - 6 6 / 19 docid024027 rev 4 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance i d 100 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms tj=175c t c=25c single pulse am15947v1 single pulse 0.05 0.02 0.01 0.1 0.2 t p [s] zth_280 t o l
sth110n10f7 - 2, sth110n10f7 - 6 electrical characteristics docid024027 rev 4 7 / 19 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : n ormalized v (br)dss vs temperature figure 12 : source - drain diode forward characteristics
test circuits sth110n10f7 - 2, sth110n10f7 - 6 8 / 19 docid024027 rev 4 3 test circuits figure 13 : switching times test circuit for resistive load figure 14 : gate charge test circuit figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit figure 17 : unclamped inductive waveform figure 18 : switching time waveform am01469v 1 v dd 47 k 1 k 47 k 2.7 k 1 k 12 v v i v gs 2200 f p w i g = const 100 100 nf d.u.t. v g am01473v 1 0 v gs 90% v ds t on 90% 10% 90% 10% t d(on) t r t t d(off) t f 10% 0 off v (br)dss v dd v dd v d i dm i d am01472v 1
sth110n10f7 - 2, sth110n10f7 - 6 package information docid024027 rev 4 9 / 19 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? speci fications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information sth110n10f7 - 2, sth110n10f7 - 6 10 / 19 docid024027 rev 4 4.1 h 2 pak - 2 package information figure 19 : h2pak - 2 outline 8159712_d
sth110n10f7 - 2, sth110n10f7 - 6 package information docid024027 rev 4 11 / 19 table 8: h2pak - 2 mechanical data dim. mm min. typ. max. a 4.30 - 4.80 a1 0.03 0.20 c 1.17 1.37 e 4.98 5.18 e 0.50 0.90 f 0.78 0.85 h 10.00 10.40 h1 7.40 7.80 l 15.30 15.80 l1 1.27 1.40 l2 4.93 5.23 l3 6.85 7.25 l4 1.5 1.7 m 2.6 2.9 r 0.20 0.60 v 0 8
package information sth110n10f7 - 2, sth110n10f7 - 6 12 / 19 docid024027 rev 4 figure 20 : h2pak - 2 recommended footprint 8159712_d
sth110n10f7 - 2, sth110n10f7 - 6 package information docid024027 rev 4 13 / 19 4.2 h 2 pak - 6 package information figure 21 : h2pak - 6 outline 8159693_rev_f
package information sth110n10f7 - 2, sth110n10f7 - 6 14 / 19 docid024027 rev 4 table 9: h2pak - 6 mechanical data dim. mm min. typ. max. a 4.30 - 4.80 a1 0.03 0.20 c 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 e 0.45 0.60 f 0.50 0.70 h 10.00 10.40 h1 7.40 7.80 l 14.75 15.25 l1 1.27 1.40 l2 4.35 4.95 l3 6.85 7.25 l4 1.5 1.75 m 1.90 2.50 r 0.20 0.60 v 0 8
sth110n10f7 - 2, sth110n10f7 - 6 package information docid024027 rev 4 15 / 19 figure 22 : h2pak - 6 recommended footprint dimensions are in mm. footprint_rev_f
package information sth110n10f7 - 2, sth110n10f7 - 6 16 / 19 docid024027 rev 4 4.3 packing information figure 23 : tape outline figure 24 : reel outline a d b f u ll r ad i u s t ape s l o t i n c o r e f o r t ape s t a rt g m ea s u r e d a t hu b c n ree l d i m ens io n s 40 mm m i n . acc e ss ho l e at s lot lo c a t ion t
sth110n10f7 - 2, sth110n10f7 - 6 package information docid024027 rev 4 17 / 19 table 10: tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base quantity 1000 p2 1.9 2.1 bulk quantity 1000 r 50 t 0.25 0.35 w 23.7 24.3
revision history sth110n10f7 - 2, sth110n10f7 - 6 18 / 19 docid024027 rev 4 5 revision history table 11: document revision history date revision changes 10 - dec - 2012 1 initial release. part number (sth110n10f7 - 2) previously included in datasheet id024005 16 - jul - 2013 2 ? modified: title ? modified: i dm value in table 2: "absolute maximum ratings" , the entire typical values in table 5: "dynamic" , table 6: "switching times" and table 7: "source - drain diode" ? minor text changes 11 - nov - 2014 3 ? updated: h 2 pak - 6 package information. ? updated the title, features and description. ? minor text changes. 26 - nov - 2014 4 changed from figure 2: "safe operating area" to figure 12: "source - drain diode forward characteristics" .
sth110n10f7 - 2, sth110n10f7 - 6 docid024027 rev 4 19 / 19 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selec tion, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics C all rights reserved

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