symbol parameters & conditions unit min. typ. max. v ce =15v, i c = 400 ma, class c c ob output capacitance: f = 1 mhz, i e = 0 pf 4.0 bipolarics, inc part number b 3 0v 1 160b silicon microwave power transistor product data sheet features: common base package configuration high output power 4 w @ 1.0 ghz high gain bandwidth product f t = 6.0 ghz @ i c = 400 ma high gain g pe = 8.5 db @ 1.0ghz performance d ata: electrical characteristics (t a = 25 o c) high reliability gold metallization nitride passivation diffused ballast resistors ceramic & pill packages available v cbo collector-base voltage 6 0 v v ceo collector-emitter voltage 3 0 v v ebo emitter-base voltage 3.0 v i c collector current (instantaneous) 600 ma t j junction temperature 200 o c t stg storage temperature -65 to 200 o c symbol parameters rating units absolute maximum ratings: p 1db power output at 1 db compression: f = 1.0 ghz w 4 collector efficiency class c % 65 h fe forward current transfer ratio: v cb = 8v, i c = 200 ma 20 60 100 p t total power dissipation w 6
page 2 bipolarics, inc part number b 3 0v 1 160b silicon microwave power transistor 0.11 (2.80) 1 2 3 4 45 0.060 (1.524) 0.880 (22.35) 0.030 (0.762) 0.004 (0.102) 0.210 (5.334) 0.045 (1.143) 0.225 (5.71) 1 2 3 4 45 1.030 (26.16) 0.055 (1.40) 0.280 dia (7.11 dia) 0.005 0.13 ( ) 0.13 (3.30) 50 ceramic 4 lead pak surface mount 28 0. 280 " pill package 20 0. 20 0 " pill package emitter collector base .125 (3.175) .050 (1.27) .050 (1.27) .090 (2.286) .050 (1.27) .050 (1.27) .140 (3.556) .250 (6.35) .250 (6.35) .560 (14.224) base .160 (4.064) .050 (1.27) .020 (.508) .070 (1.778) .190 (4.826) collector emitter base base collector emitter 0.086 (2.184) base base 08 ceramic so8 package notes: (unless otherwise specified) 1. dimensions are in 2. tolerances: in .xxx = .005 mm .xx = .13 3. all dimensions nominal; subject to change without notice (mm) lead 1 2 3 4 20 & 28 base emitter base collector package drawings are not to scale.
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