n-c hannel logic level e nhancement mode f ield e ffect t rans is tor abs olute maximum r ating s (t a =25 c unles s otherwis e noted) s amhop microelectronics c orp. 1 p r oduc t s ummar y v ds s i d r ds (on) ( m ) 40v 30a 20 @ v gs = 10v 30 @ v gs =4.5v stu series to-252a a(d-pak) std series to-251(l-pak) g g g g s s s s d d d d thermal characteristics thermal r esistance, junction-to-case thermal r esistance, junction-to-ambient r jc 3 50 r ja /w c /w c 40 parameter symbol limit unit drain-s ource voltage v ds v g ate-s ource voltage 20 v gs v -p ulsed 30 i d a 100 i dm a drain-s ource diode forward current i s a maximum p ower dis s ipation p d w operating and storage temperature r ange t j ,t stg -55 to 175 c @tc=25c 50 drain c urrent-c ontinuous @ t c =25 c a max s tu/d410s b surface mountpackage. features super high dense cell design for low r ds (on ). r ugged and reliable. esd protected. g d s oct. 9, 2007 8 ver1.1
parameter symbol c ondition min typ max unit off characteristics drain-s ource b reakdown voltage bv ds s = v gs 0v, i d 250ua = 40 v zero g ate voltage drain c urrent i ds s v ds 32v, v gs 0v == 1 gate-body leakage i gss v gs 20v, v ds 0v = = 10 ua on char acte r is tics a g a te t hre s hold v olta ge v gs(th) v ds v gs ,i d = 250ua = 11.93 v d ra in-s ourc e o n-s ta te r e s is ta nc e r ds (on) v gs 10v, i d 10a v gs 4.5v, i d 8a o n-s ta te d ra in c urre nt i d(on) v ds =10v,v gs = 10v a s f orward trans conductance fs g v ds 10v, i d 10a dynamic char acte r is tics b input capacitance c is s c rss c oss o utput c a pa c ita nc e r everse transfer capacitance v ds =15v, v gs =0v f =1.0mh z p f p f p f c = = = = == 2 5 ua mohm mohm 30 95 140 690 17 s witc hing c har ac te r is tic s b turn-on delay time rise time turn-o ff delay time t d(on) t r t d(off) t f v dd = 15v i d =1a v gs =10v r gen =3ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =20v, i d = 10a v gs =10v nc nc nc fall time v ds =20v, i d =10a,v gs =10v nc v ds =20v, i d =10a,v gs =4.5v 13.5 11.8 45.7 13.5 13.1 3.85 1.65 6.7 s tu/d410s e le ctr ical char acte r is tics (t c =25 c unles s otherwis e noted) 20 30 16 23
parameter symbol c ondition min typ max unit electrical characteristics (t c =25 c unles s otherwis e noted) drain-source diode characteristics diode forward voltage v sd v gs =0v,is =8a v a notes b.g uaranteed by des ign, not s ubject to production tes ting. a.pulse test:pulse width 300us, duty cycle 2%. figure 2. transfer characteristics f igure 4. o n-r e s is ta nc e va ria tion with drain c urrent and temperature i d , drain c urrent (a) v gs , g ate-to-s ource voltage (v ) r ds (on) ( m ) on-resistance i d , drain c urrent (a) 3 r ds (on) , normalized s tu/d410s 42 35 28 21 14 7 0 1.75 1.60 1.45 1.30 1.15 1.0 0.8 -25 0 25 50 150 0.84 tj( c) 125 75 100 v gs =10v i d =10a t j, j unction t emperature ( c ) f igure 3. on-r es is tance vs . drain c urrent and gate voltage 45 1 v gs =4.5v i d =8a f igure 1. output c haracteris tics v ds ,drain-to-sourcevoltage(v) i d , drain c urrent(a) 20 12 8 4 0 0 0.8 1.6 3.2 4.8 16 25 c 1.3 2.4 4.0 -55 c 45 36 18 9 0 0 0.5 1.0 1.5 2.0 2.5 3.0 27 v gs =10v v gs =3v v gs =3.5v v gs =4v v gs =4.5v v gs =10v tj=125 c 36 27 18 9 v gs =4.5v
s tu/d410s f igure 6. b reakdown v oltage v ariation with t emperature v th, normalized g ate-s ource t hreshold v oltage bv ds s , normalized drain-s ource b reakdown v oltage is, s ource-drain current (a) f igure 8. b ody diode f orward v oltage v ariation with s ource c urrent v sd ,bodydiodeforwardvoltage(v) t j, j unction t emperature ( c ) t j, j unction t emperature ( c ) 4 6 20.0 10.0 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =250ua v gs ,gate-sourcevoltage(v) r ds (on) ( m ) 54 45 36 27 18 9 0 f igure 7. on-r es is tance vs . g ate-s ource v oltage 24 68 10 0 f igure 5. g ate t hreshold v ariation with t emperature i d =10a 75 c 125 c 25 c 75 c 25 c 125 c
s tu/d410s 6 f igure 12. maximum s afe operating area v ds , drain-s ource v oltage (v ) i d , drain c urrent (a) v gs , g ate to s ource v oltage (v ) f igure 10. g ate c harge qg, total gate charge (nc) 10 8 6 4 2 0 03 6 9 12 15 18 21 24 v ds =20v i d =10a figure 9. capacitance v ds , drain-to s ource voltage (v ) c, capacitance (pf) f igure 11.s witching characteris tics rg,gateresistance( ) s witching t ime (ns ) 100 10 1 1 610 60100 60 600 300 220 td(on) t d(off) tr tf vds =15v,id=1a vgs =10v 5 0 5 10 15 20 25 30 900 750 600 450 300 150 0 ciss coss crss t rans ient t hermal impedance s quare wave p ulse duration (sec) f igure 13. normalized t hermal t rans ient impedance c urve r(t),normalized e ffective 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r "? ja (t)=r (t) * r "? ja 2. r "? ja =s ee datasheet 3. t jm- t a =p dm *r "? ja (t) 4. duty cycle, d=t 1 /t 2 single pulse 150 10 1 0.1 0.1 1103060 v gs =10v s ingle p uls e tc=25 c r d s ( on) lim it 1 s 1 00 ms 1 0 ms 1 ms 100 dc 1 00 u s
6 s tu/d410s to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
7 s tu/d410s 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067
to-252 to-252 carrier tape to-252 reel tape and reel data unit: 1 package to-252 (16 1 + a0 b0 k0 d0 d1 ee1e2 p0 p1 p2 t 6.80 :< 0.1 10.3 :< 0.1 2.50 :< 0.1 q 2 q 1.5 + 0.1 -0 16.0 0.3 :< 1.75 0.1 :< 7.5 :< 0.15 8. 0 :< 0.1 4. 0 :< 0.1 2.0 :< 0.15 0.3 :< 0.05 unit: 1 tape size 16 1 reel size q 330 m n w t h k s g r v q 330 :< 0.5 q 97 :< 1.0 17.0 + 1.5 -0 2. 2 q 13.0 +0.5 - 0.2 10.6 2.0 :< 0.5 s 8 s tu/d410s
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