digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130115 mcr218 series silicon controlled rectifiers available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf-19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit peak repetitive off-state voltage (1) (t j = -40 to +125c, gate open) mcr218-2 mcr218-3 mcr218-4 mcr218-6 mcr218-7 mcr218-8 MCR218-10 v drm v rrm 50 100 200 400 500 600 800 v on-state rms current (180 conduction angles, t c = 70c) i t(rms) 8.0 a peak non-repetitive surge current (one half-cycle, sine wave, 60hz, t j = 125c) i tsm 100 a circuit fusing consideration (t = 8.3ms) i 2 t 26 a 2 s forward peak gate power (pulse width 1.0s, t c = 70c) p gm 5 w forward average gate power (t = 8.3ms, t c = 70c) p g(av) 0.5 w forward peak gate current (pulse width 1.0s, t c = 70c) i gm 2.0 a operating temperature range t j -40 to +125 c storage temperature range t stg -40 to +150 c note 1: v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; positive gate voltage sh all not be applied concurrent with negative potential on the anode. blocking voltages sh all not be tested with a co nstant current source such that the voltage ratings of the devices are exceeded. thermal characteristics characteristic symbol maximum unit thermal resistance, junction to case r ? jc 2.0 c/w maximum lead temperature for soldering purposes 1/8? from case for 10s t l 260 c electrical characteristics (t j = 25c, unless otherwise noted) characteristic symbol min typ max unit off characteristics peak forward or reverse blocking current (v ak = rated v drm or v rrm , gate open) t j = 25c t j = 125c i drm, i rrm - - - - 10 2.0 a ma on characteristics peak on-state voltage * (i tm = 16a peak) v tm - 1.5 1.8 v gate trigger current (continuous dc) (v d = 12v, r l = 100 ? ) i gt - 10 25 ma gate trigger voltage (continuous dc) (v d = 12v, r l = 100 ? ) v gt - - 1.5 v gate non-trigger voltage (rated 12v, r l = 100 ? , t j = 125c) v gd 0.2 - - v holding current (v d = 12v, initiating current = 200ma, gate open) i h - 16 30 ma dynamic characteristics critical rate of rise of off-state voltage (v d = rated v drm , exponential waveform, gate open, t j = 125c) dv/dt - 100 - v/s * pulse width 1.0ms, duty cycle 2%.
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mcr218 series silicon controlled rectifiers mechanical characteristics case to-220ab marking alpha-numeric pin out see below fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130115
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mcr218 series silicon controlled rectifiers fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130115
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