1. product profile 1.1 general description npn silicon germanium microwave transistor for high speed, low noise applications in a sot883c leadless ultra small plastic smd package. 1.2 features and benefits ? leadless ultra small plastic smd package 1.0 mm ? 0.6 mm ? 0.34 mm ? low noise high gain microwave transistor ? noise figure (nf) = 0.75 db at 6 ghz ? high maximum power gain (g p(max) ) of 15.8 db at 6 ghz ? excellent linearity in wifi lna from 5 ghz to 5.9 ghz: ? input third-order intercept point (ip3 i ) = 15 dbm ? input power at 1 db gain compression (p i(1db) ) = 0 dbm see application note an11224: low noise fast turn on/off 5-5.9ghz wifi lna with bfu730lx . ? 110 ghz f t silicon germanium technology 1.3 applications ? wi-fi / wlan see application notes: ? an11223: low noise fast turn on/o ff 2.4-2.5ghz wifi lna with bfu730lx ? an11224: low noise fast turn on/o ff 5-5.9ghz wifi lna with bfu730lx ? wimax ? lna for gps, glonass, galileo and compass (beidou) ? dbs (2nd lna stage, mixer stage, dro), sdars ? rke, amr / zigbee ? lna for microwave communications systems ? low current battery equipped applications ? microwave driver / buffer applications bfu730lx npn wideband silicon germ anium rf transistor rev. 1 ? 8 may 2013 product data sheet 6 2 7 & caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards.
bfu730lx all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 8 may 2013 2 of 13 nxp semiconductors bfu730lx npn wideband silicon germanium rf transistor 1.4 quick reference data [1] t sp is the temperature at the solder point of the emitter lead. [2] g p(max) is the maximum power gain, if k > 1. if k < 1 then g p(max) = maximum stable gain (msg). 2. pinning information 3. ordering information table 1. quick reference data t j =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v cb collector-base voltage open emitter - - 10.0 v v ce collector-emitter voltage open base - - 3.0 v shorted base - - 10.0 v v eb emitter-base voltage open collector - - 1.3 v i c collector current - 5 30 ma p tot total power dissipation t sp ? 110 ?c [1] - - 160 mw h fe dc current gain i c =2ma; v ce =2v; t j =25 ?c 205 380 555 f t transition frequency i c =25ma; v ce =3v; f=2ghz; t amb =25 ?c -53- ghz g p(max) maximum power gain i c =25ma; v ce =3v; f=6ghz; t amb =25 ?c [2] - 15.8 - db nf noise figure i c =5ma; v ce =3v; f=6 ghz; ? s = ? opt -0.75- db p l(1db) output power at 1 db gain compression i c =25ma; v ce =3v; z s =z l =50 ? ; f=1.8ghz; t amb =25 ?c -11.7- dbm table 2. discrete pinning pin description simplified outline graphic symbol 1base 2 collector 3emitter 7 u d q v s d u h q w w r s y l h z d d d table 3. ordering information type number package name description version bfu730lx - leadless ultra small plastic package; 3 terminals; body 1 ? 0.6 ? 0.34 mm sot883c
bfu730lx all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 8 may 2013 3 of 13 nxp semiconductors bfu730lx npn wideband silicon germanium rf transistor 4. marking 5. design support [1] see http://www.nxp.com/models.html . 6. limiting values [1] t sp is the temperature at the solder point of the emitter lead. table 4. marking type number marking bfu730lx zd table 5. available design support download from the bfu730lx product page on http://www.nxp.com . support item available remarks device models for agilent eesof eda ads yes [1] based on mextram device model device models for agilent eesof eda genesys yes based on mextram device model device models for awr microwave office planned based on mextram device model device models for ansys ansoft design er planned based on me xtram device model spice model planned based on gummel-poon device model s-parameters yes noise parameters yes customer evaluation kit yes gerber files evaluation board yes reflow soldering footprint yes an11223: low noise fast turn on/off 2.4-2.5ghz wifi lna with bfu730lx yes application note an11224: low noise fast turn on/off 5-5.9ghz wifi lna with bfu730lx yes application note table 6. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cb collector-base voltage open emitter - 10.0 v v ce collector-emitter voltage open base - 3.0 v shorted base - 10.0 v v eb emitter-base voltage open collector - 1.3 v p tot total power dissipation t sp ? 110 ?c [1] - 160 mw t stg storage temperature ? 65 +150 ?c t j junction temperature - 150 ?c
bfu730lx all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 8 may 2013 4 of 13 nxp semiconductors bfu730lx npn wideband silicon germanium rf transistor 7. recommended operating conditions 8. thermal characteristics 9. characteristics table 7. recommended operating conditions symbol parameter conditions min typ max unit t j junction temperature ? 40 - +125 ?c i c collector current - - 30 ma table 8. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 250 k/w fig 1. total supply current as a function of solder point temperature d d d 7 v s ? & |