1 triquint semiconductor texas: phone (972) 994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 1 8 - 18 ghz wideband driver amplifier TGA8399C primary applications ? x and ku band driver ? point-to-point radio chip dimensions: 3.5mm x 2.4mm x 0.1 mm 8 9 10 11 12 13 14 15 16 17 18 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) small signal gain (db) -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 return loss (db) 2 3 4 5 6 7 8 9 10 11 12 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) noise figure (db) 5 6 7 8 9 10 11 12 13 14 15 p1db (dbm) nf pout input rl output rl gain key features and performance ? two stage driver amplifier ? 0.25m phemt 2mi technology ? 8-18 ghz frequency range ? 13 dbm nominal pout ? 17 db nominal gain ? balanced in/out for low vswr ? 4.5v @ 50ma self bias ? chip dimensions: 3.5mm x 2.4mm x 0.1 mm fixtured measured performance note: datasheet is subject to change without notice.
2 triquint semiconductor texas: phone (972) 994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 TGA8399C table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 8 v 2/ i + positive supply current 180 ma 2/ | i g | gate supply current 3.52 ma p in input continuous wave power 17.0 dbm 2/ p d power dissipation 0.94 w 2/, 3/ t ch operating channel temperature 150 c 4/, 5/ t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 c to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ when operated at this bias condition with a base plate temperature of 70 c, the median life is 1 e+6 hours. 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ these ratings apply to each individual fet.
3 triquint semiconductor texas: phone (972) 994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 table ii dc probe tests (t a = 25 c, nominal) symbol parameter minimum maximum value v p pinch-off voltage -1.5 -0.5 v bvgs breakdown voltage gate-source -30 -8 v bvgd breakdown voltage gate-drain -30 -8 v table iii rf characterization table (t a = 25 c, nominal) v d = 5 v symbol parameter test condition limit min nom max units gain small signal gain f = 8 ? 18 ghz 12 16 --- db irl input return loss f = 8 ? 18 ghz --- -18 -12 db orl output return loss f = 8 ? 18 ghz --- -20 -12 db table iv thermal information parameter test conditions t ch ( o c) r jc ( c/w) t m (hours) r jc thermal resistance (channel to backside of carrier) vd = 4.5 v id = 50 ma pdiss = 0.225 w 89 85 4.1 e+8 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 o c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. TGA8399C
4 triquint semiconductor texas: phone (972) 994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 10 11 12 13 14 15 16 17 18 19 20 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) small signal gain (db) +125c +75c +25c +0c -25c -55c 8 9 10 11 12 13 14 15 16 17 18 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) output p1db (dbm) +125c, 53.2ma +75c, 53.5ma +25c, 54.0ma +0c, 53.9ma -25c, 53.8ma -55c, 53.2ma TGA8399C performance vs. temperature TGA8399C
5 triquint semiconductor texas: phone (972) 994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 mechanical drawing gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA8399C
6 triquint semiconductor texas: phone (972) 994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 recommended assembly layout gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 15um_plt_gap 15um_plt_gap 15um_plt_gap 15um_plt_gap 15um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap gndpad dot 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap dot 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 150um_4finger 10um_plt_gap dot 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap gndpad 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap dot 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 150um_4finger 10um_plt_gap dot 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 10um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 8_5um_plt_gap 300um_4finger 15um_plt_gap 15um_plt_gap 15um_plt_gap 15um_plt_gap 15um_plt_gap 300um_4finger 37_5umgate 37_5umgate 37_5umgate 37_5umgate 37_5umgate 37_5umgate 37_5umgate 37_5umgate 75umgate 75umgate 75umgate 75umgate 75umgate 75umgate 75umgate 75umgate 19 20 24 25 185 186 187 188 189 190 214 215 279 280 282 283 284 285 286 288 117 118 119 125 135 136 137 138 139 140 141 142 143 144 145 65 66 67 68 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 gndpad2 dot4 169 170 171 172 173 174 dot5 193 197 198 199 200 201 203 204 106 217 218 dot7 1 52 53 54 55 56 59 60 107 108 109 110 111 112 113 114 219 220 221 222 223 224 225 281 gndpad1 2 34 5 67 dot1 12 13 14 15 16 17 28 29 30 31 32 dot2 18 21 22 23 62 63 64 69 57 58 61 70 71 72 73 74 75 76 27 44 45 46 191 194 212 213 26 41 42 43 167 168 182 183 184 192 195 196 275 276 277 278 150 8 9 10 11 33 34 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 rf in rf out + 4.5 v 100 pf TGA8399C
7 triquint semiconductor texas: phone (972) 994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 assembly process notes gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c (for 30 sec max). ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage temperature is 200 c. TGA8399C
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