IRL8114PBF application ?? optimized for ups/inverter applications ?? low voltage power tools benefits ?? low rds(on) at 4.5v v gs ?? low gate charge ?? fully characterized capacitance and avalanche soa ?? lead-free to-220ab IRL8114PBF s d g g d s gate drain source base part number package type standard pack orderable part number form quantity IRL8114PBF to-220 tube 50 IRL8114PBF absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 120 ? i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 85 a i dm pulsed drain current ?? 440 ? ? p d @t c = 25c maximum power dissipation 115 w p d @t c = 100c maximum power dissipation 58 linear derating factor 0.77 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw ? 10 lbfin (1.1 nm) ? thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 1.3 c/w ? r ? cs case-to-sink, flat greased surface 0.50 ??? r ? ja junction-to-ambient ??? 62 i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 90 notes ? through ?? are on page 7 1 www.irf.com ? 2015 international rectifier submit datasheet feedback march 11, 2015 hexfet ? power mosfet d s g v dss 30v r ds(on) typ. 3.5m ?? max 4.5m ?? i d (silicon limited) 120a ? i d (package limited) 90a ?
? IRL8114PBF 2 www.irf.com ? 2015 international rectifier submit datasheet feedback march 11, 2015 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.017 ??? mv/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance ??? 3.5 4.5 m ??? v gs = 10v, i d = 40a ? ??? 4.6 5.8 v gs = 4.5v, i d = 32a ? v gs(th) gate threshold voltage 1.35 ??? 2.25 v v ds = v gs , i d = 250a ? v gs(th) / ? t j gate threshold voltage temp. coefficient ??? -6.7 ??? i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 24v, v gs = 0v ??? ??? 150 v ds = 24v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v gfs forward transconductance 173 ??? ??? s v ds = 15v, i d = 32a q g total gate charge ??? 19 29 nc ? q gs1 pre-vth gate-to-source charge ??? 5.0 ??? v ds = 15v q gs2 post vth gate-to-source charge ??? 3.0 ??? v gs = 4.5v ? q gd gate-to-drain charge ??? 6.7 ??? i d = 32a q godr gate charge overdrive ??? 4.3 ??? see fig. 16 q sw switch charge (q gs2 + q gd ) ??? 9.7 ??? q oss output charge ??? 15 ??? nc v ds = 16v,v gs = 0v t d(on) turn-on delay time ??? 27 ??? ns v dd = 15v t r rise time ??? 103 ??? i d = 32a t d(off) turn-off delay time ??? 29 ??? r g = 10 ?? t f fall time ??? 45 ??? v gs = 4.5v ? c iss input capacitance ??? 2660 ??? pf ? v gs = 0v c oss output capacitance ??? 600 ??? v ds = 15v c rss reverse transfer capacitance ??? 300 ??? ? = 1.0mhz avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 200 mj i ar avalanche current ? 32 a diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 120 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 440 ? integral reverse (body diode) ?? p-n junction diode. v sd diode forward voltage ??? ??? 1.0 v t j = 25c,i s = 32a,v gs = 0v ?? t rr reverse recovery time ??? 22 33 ns t j = 25c, i f = 32a , v dd = 15v q rr reverse recovery charge ??? 13 20 nc di/dt = 100a/s ??? d s g
? IRL8114PBF 3 www.irf.com ? 2015 international rectifier submit datasheet feedback march 11, 2015 fig 4. normalized on-resistance vs. temperature fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . drain-to-source voltage 0.1 1 10 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 5.0v 4.5v 4.0v 3.5v bottom 3.0v ? 60s pulse width tj = 25c 3.0v 0.1 1 10 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 5.0v 4.5v 4.0v 3.5v bottom 3.0v ? 60s pulse width tj = 175c 3.0v 1 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 10v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 40a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1020304050 q g , total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 32a
? IRL8114PBF 4 www.irf.com ? 2015 international rectifier submit datasheet feedback march 11, 2015 fig 8. maximum safe operating area fig 9. threshold voltage vs. temperature fig 7. typical source-drain diode forward voltage fig 11. typical on-resistance vs. gate voltage 0.0 0.5 1.0 1.5 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 250a fig 10. maximum avalanche energy charge vs. drain current 2 4 6 8 101214161820 v gs, gate -to -source voltage (v) 0 2 4 6 8 10 12 14 16 18 20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 40a t j = 25c t j = 125c fig 12. maximum drain current vs. case temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 140 i d , d r a i n c u r r e n t ( a ) limited by package 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 9.4a 14a bottom 32a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 10msec 1msec 100sec dc operation in this area limited by rds(on) limited by package
? IRL8114PBF 5 www.irf.com ? 2015 international rectifier submit datasheet feedback march 11, 2015 fig 13. maximum effective transient thermal impedance, junction-to-case fig 14a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 16a. gate charge test circuit t p v (br)dss i as fig 14b. unclamped inductive waveforms fig 15b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 16b. gate charge waveform vdd ?
? IRL8114PBF 6 www.irf.com ? 2015 international rectifier submit datasheet feedback march 11, 2015 to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application .
? IRL8114PBF 7 www.irf.com ? 2015 international rectifier submit datasheet feedback march 11, 2015 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? to-220 n/a rohs compliant yes moisture sensitivity level ? notes: ? calculated continuous current based on maximum allowable ju nction temperature. bond wire current limit is 90a. note that current limitation arising from heating th e device leads may occur with some lead mounting arrangements. (refer to an-1140) ? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.39mh, r g = 50 ? , i as = 32a, v gs =10v. ?? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at t j approximately 90c. ? pulse drain current is limited at 360a by source bond technology.
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