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with ultrafast soft recovery diode irgb4064dpbf 1 www.irf.com 11/28/06 =

= c e c g

gce gate collector emitter e g n-channel c features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175 c ? 5s scsoa ? square rbsoa ? 100% of the parts tested for i lm ? positive v ce (on) temperature coefficient. ? ultra fast soft recovery co-pak diode ? tighter distribution of parameters ? lead-free package benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi absolute maximum ratings parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 20 i c @ t c = 100c continuous collector current 10 i cm pulsed collector current 40 i lm clamped inductive load current 40 a i f @t c =25c diode continuous forward current 20 i f @t c =100c diode continuous forward current 10 i fm diode maximum forward current 40 continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c =25 maximum power dissipation 101 w p d @ t c =100 maximum power dissipation 50 t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 1.49 r jc junction-to-case - diode ??? ??? 3.66 r cs case-to-sink, flat, greased surface ??? 0.50 ??? r ja junction-to-ambient, typical socket mount ??? ??? 62 wt weight 1.44 g c/w v ge -55 to + 175 300 (0.063 in. (1.6mm) from case)
irgb4064dpbf 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 15v, l = 28 h, r g = 22 ?. pulse width limited by max. junction temperature.

electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v ( br ) ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 100a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ?0.47?v/cv ge = 0v, i c = 500a (-55c-175c) ? 1.6 1.91 i c = 10a, v ge = 15v, t j = 25c v ce ( on ) collector-to-emitter saturation voltage ? 1.9 ? v i c = 10a, v ge = 15v, t j = 150c 5,6,7,9, ?2.0? i c = 10a, v ge = 15v, t j = 175c 10 ,11 v ge ( th ) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 275a ? v ge(th) / ? tj threshold voltage temp. coefficient ? -11 ? mv/c v ce = v ge , i c = 1.0ma (25c - 175c) gfe forward transconductance ? 6.9 ? s v ce = 50v, i c = 10a, pw = 80s i ces collector-to-emitter leakage current ? ? 25 a v ge = 0v, v ce = 600v ? 328 ? v ge = 0v, v ce = 600v, t j = 175c 8 v fm diode forward voltage drop ? 2.5 3.1 v i f = 10a ?1.7? i f = 10a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switchin g characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) ? 21 32 i c = 10a 24 q g e gate-to-emitter charge (turn-on) ? 5.3 8.0 nc v ge = 15v ct1 q g c gate-to-collector charge (turn-on) ? 8.9 13 v cc = 400v e on turn-on switching loss ? 29 71 i c = 10a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 200 308 j r g = 22 ? , l = 1.0mh, t j = 25c ct4 e total total switching loss ? 229 339 energy losses include tail & diode reverse recovery t d ( on ) turn-on delay time ? 27 37 i c = 10a, v cc = 400v, v ge = 15v t r rise time ? 15 23 ns r g = 22 ? , l = 1.0mh, t j = 25c ct4 t d ( off ) turn-off delay time ? 79 90 t f fall time ? 21 30 e on turn-on switching loss ? 99 ? i c = 10a, v cc = 400v, v ge = 15v 13,15 e off turn-off switching loss ? 316 ? j r g =22 ? , l=1.0mh, t j = 175c ct4 e total total switching loss ? 415 ? energy losses include tail & diode reverse recovery wf1,wf2 t d ( on ) turn-on delay time ? 27 ? i c = 10a, v cc = 400v, v ge = 15v 14,16 t r rise time ? 16 ? ns r g = 22 ? , l = 1.0mh, t j = 175c ct4 t d ( off ) turn-off delay time ? 98 ? wf1,wf2 t f fall time ? 33 ? c ies input capacitance ? 594 ? pf v ge = 0v 22 c oes output capacitance ? 49 ? v cc = 30v c res reverse transfer capacitance ? 17 ? f = 1.0mhz t j = 175c, i c = 40a 4 rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v ct2 rg = 22 ? , v ge = +15v to 0v scsoa short circuit safe operating area 5 ? ? s v cc = 400v, vp =600v 22, ct3 rg = 22 ? , v ge = +15v to 0v wf4 erec reverse recovery energy of the diode ? 191 ? j t j = 175c 17,18,19 t rr diode reverse recovery time ? 62 ? ns v cc = 400v, i f = 10a 20,21 i rr peak reverse recovery current ? 16 ? a v ge = 15v, rg = 22 ? , l=1.0mh wf3 ct6 9,10,11,12 conditions
irgb4064dpbf www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 4 - reverse bias soa t j = 175c; v ce = 15v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 3 - forward soa, t c = 25c; t j 175c 0 20 40 60 80 100 120 140 160 180 t c (c) 0 4 8 12 16 20 24 i c ( a ) 0 20 40 60 80 100 120 140 160 180 t c (c) 0 20 40 60 80 100 120 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 i c a ) 0246810 v ce (v) 0 10 20 30 40 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0246810 v ce (v) 0 10 20 30 40 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 1 10 100 1000 v ce (v) 0.1 1 10 100 i c ( a ) 10sec 100sec tc = 25c tj = 175c single pulse dc 1msec
irgb4064dpbf 4 www.irf.com fig. 9 - typical v ce vs. v ge t j = -40c fig. 7 - typ. igbt output characteristics t j = 175c; tp = 80s fig. 10 - typical v ce vs. v ge t j = 25c fig. 8 - typ. diode forward characteristics tp = 80s fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10s fig. 11 - typical v ce vs. v ge t j = 175c 0 5 10 15 20 v ge (v) 0 10 20 30 40 i c e ( a ) t j = 25c t j = 175c 0246810 v ce (v) 0 10 20 30 40 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v f (v) 0 10 20 30 40 50 60 70 80 i f ( a ) -40c 25c 175c 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 20a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 20a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 10a i ce = 20a
irgb4064dpbf www.irf.com 5 fig. 13 - typ. energy loss vs. i c t j = 175c; l = 1mh; v ce = 400v, r g = 22 ? ; v ge = 15v. fig. 15 - typ. energy loss vs. r g t j = 175c; l = 1mh; v ce = 400v, i ce = 10a; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l=1mh; v ce = 400v r g = 22 ? ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l=1mh; v ce = 400v i ce = 10a; v ge = 15v fig. 17 - typical diode i rr vs. i f t j = 175c fig. 18 - typical diode i rr vs. r g t j = 175c; i f = 10a 0 4 8 12162024 i c (a) 0 100 200 300 400 500 600 e n e r g y ( j ) e off e on 0 4 8 12 16 20 24 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 r g ( ? ) 0 50 100 150 200 250 300 350 e n e r g y ( j ) e on e off 0 25 50 75 100 125 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 4 8 12 16 20 24 i f (a) 0 4 8 12 16 20 24 i r r ( a ) r g = 100 ? r g = 10 ? r g = 22 ? r g = 47 ? 0 25 50 75 100 125 r g ( ?) 0 4 8 12 16 20 i r r ( a )
irgb4064dpbf 6 www.irf.com fig. 20 - typical diode q rr v cc = 400v; v ge = 15v; t j = 175c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i ce = 10a; t j = 175c fig. 24 - typical gate charge vs. v ge i ce = 10a, l=600h fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 22 - typ. v ge vs short circuit time v cc =400v, t c =25c fig. 21 - typical diode e rr vs. i f t j = 175c 0 200 400 600 800 1000 1200 di f /dt (a/s) 5 10 15 20 i r r ( a ) 0 2 4 6 8 10 12 14 16 18 20 22 i f (a) 0 50 100 150 200 250 300 i r r ( a ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? 8 10121416 v ge (v) 0 2 4 6 8 10 12 14 16 t i m e ( s ) 0 10 20 30 40 50 60 70 80 c u r r e n t ( a ) t sc i sc 0 500 1000 1500 di f /dt (a/s) 300 400 500 600 700 800 900 q r r ( n c ) 10 ? 22 ? 47 ? 100 ? 20a 10a 5.0a 0 4 8 12162024 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 300v 400v 0 20 40 60 80 100 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres
irgb4064dpbf www.irf.com 7 fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? (sec) 1.939783 0.000975 1.721867 0.006135 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci= i / ri ri (c/w) ? (sec) 0.007362 0 0.342317 0.000048 0.647826 0.000192 0.493231 0.001461 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / i / ri c 4 4 r 4 r 4
irgb4064dpbf 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit l rg 80 v dut 480v + - fig.c.t.5 - resistive load circuit fig.c.t.6 - typical filter circuit for v (br)ces measurement
irgb4064dpbf www.irf.com 9 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 wf.3- typ. reverse recovery waveform @ t j = 175c using ct.4 wf.4- typ. short circuit waveform @ t j = 25c using ct.3 0 100 200 300 400 500 -0.04 0.06 0.16 time(s) v ce (v) 0 2 4 6 8 10 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf -25 50 125 200 275 350 -0.1 0.1 time (s) v ce (v) 0 5 10 15 20 25 i ce (a) test current 90% test current 5% v ce 10% test current tr eon loss -475 -400 -325 -250 -175 -100 -25 -0.05 0.15 0.35 time (s) v f (v) -20 -15 -10 -5 0 5 10 i f (a) peak i rr t r r q r r 10% peak irr -10 10 30 50 70 90 110 -5 0 5 10 time (us) vce (v) 0 75 150 225 300 375 450 ice (a) vc e ic
irgb4064dpbf 10 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/06 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. to-220ab packages are not recommended for surface mount application.

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lot code 1789 example: t his is an irf1010 note: "p" in assembly line position i ndi cates "l ead - f r ee" in the assembly line "c" as s embled on ww 19, 2000 international part number rectifier lot code assembly logo year 0 = 2000 dat e code week 19 line c
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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