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a pr343 09 c document number: ds 37492 rev. 3 - 2 1 of 13 www.diodes.com november 2014 ? diodes incorporated a pr34 3 09 c a product line of diod es incorporated new product secondary side synchronous rectification switcher description APR34309C is a secondary side combo ic, which combines an n - channel mosfet and a driver circuit designed for synchronous rect ification (sr) in dcm operation. it also integrates o utput voltage detect function for primary side control system. the n - channel mosfet has been optimized for low gate charge, low r ds(on) , fast switching speed and body diode reverse recovery performance. the synchronous rectification can effectively redu ce the secondary side rectifier power dissipation and provide high performance solution. by sensing mosfet drain - to - source voltage, APR34309C can output ideal drive signal with less external components. it can provide high performance solution for 5v outpu t voltage application. same as ap4341, APR34309C detects the output voltage and provides a periodical signal when the output voltage is lower than a certain threshold. by fast response to secondary side voltage, APR34309C can effectively improve the trans ient performance of primary side control system. the APR34309C is available in so - 8ep package. features ? synchronous rectification for dcm operation flyback ? eliminate resonant ring interference ? fast detector of supply voltages ? fewest external components ? totally lead - free & fully rohs compliant (note s 1 & 2 ) ? halogen and antimony free. green device ( note 3 ) pin assignments ( top view) note: the drain pin of internal mosfet is exposed pad, which is at the bottom of ic ( t he dashed box ). the secondary current should flow from gnd(pin 6,7,8 ) t o this exposed pad. so - 8ep applications ? adapters/chargers for cell/cordless phones, adsl m odems, mp3 and other portable apparatus ? standby an d auxiliary power supplies note s : 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2 . see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal o gen - and antimony - free, "green" and lead - f ree . 3 . halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds . typic al applications circuit 1 2 3 4 8 7 6 5 d r i s r v d e t a r e f v c c d r a i n g n d g n d g n d + c 2 1 + c 2 2 a p r 3 4 3 0 9 c r 2 4 v c c a r e f d r a i n d r a i n g n d g n d v d e t d r i s r r 2 2 c 2 3 r 2 1 c 2 4 r 2 3 g n d
a pr343 09 c document number: ds 37492 rev. 3 - 2 2 of 13 www.diodes.com november 2014 ? diodes incorporated a pr34 3 09 c a product line of diod es incorporated new product pin description s pin number pin name function 1 drisr synchronous rectification mosfet drive . 2 vdet synchronous rectification sense input and dynamic function output, connected to drain through a resistor . 3 aref program a voltage reference with a resistor from aref to gnd, to enable synchronous rectification mosfet drive signal . 4 vcc power supply, connected with system output . 5 drain drain pin of internal mosfet . the drain voltage signal ca n obtain from this pin. 6,7,8 gnd source pin of internal mosfet, connected to ground . exposed pad drain drain pin of internal mosfet . the secondary current should flow from gnd (pin 6.7.8 ) to this drain pad . functional block diagram v r e f c o u n t e r t o n p d e t d y n a m i c o s c i n t e g r a t o r ( v d e t - v c c ) * t o n p s r d r i v e r o v p i o v p v d e t i a r e f g n d v d e t v c c a r e f d r i s r d r a i n 1 2 3 4 5 , e p 6 , 7 , 8
a pr343 09 c document number: ds 37492 rev. 3 - 2 3 of 13 www.diodes.com november 2014 ? diodes incorporated a pr34 3 09 c a product line of diod es incorporated new product absolute maximum ratings (note 4 ) symbol parameter value unit v cc supply voltage - 0.3 to 7.5 v v det, v drain voltage at vdet, drain pin - 2 to 50 v v aref, v drisr voltage at aref, drisr pin - 0.3 to 6 v i d continuous drain current 20 a i dm pulsed drain current 80 a p d power dissipation at t a = + 25 oc 2.2 w ja thermal resistance (junction to ambient) (note 5) 56 oc /w j c thermal resistance (junction to case) (note 5) 12 oc /w t j operating junction temperature + 150 oc t stg storage temperature - 65 to + 150 oc t lead lead temperature (soldering, 10 sec) + 300 o c esd charge device model 1 000 v note s: 4 . stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. these are stres s ratings only, and functional operation of the device at these or any other condi tions beyond those indicated under recommended operating conditions is not implied. exposure to absolute maximum ratings for extended periods may affect device reliability. 5. fr - 4 substrate pc board, 2oz copper, with 1 inch 2 pad layout . recomm ended operating conditions symbol parameter min max unit v cc supply voltage 3.3 6 v t a ambient temperature - 40 + 85 oc
a pr343 09 c document number: ds 37492 rev. 3 - 2 4 of 13 www.diodes.com november 2014 ? diodes incorporated a pr34 3 09 c a product line of diod es incorporated new product electrical characteristics ( @ t a = + 25c, v cc =5v, unless otherwise specified . ) symbol parameter conditions min typ max unit supply voltage ( vcc pin ) i startup startup current v cc =v startup - 0.1v C 100 150 a i op operating current vdet pin floating v cc =v trigger +20mv 40 100 150 a v startup startup voltage C 2. 6 3.1 3.4 v C uvlo C 2. 3 2.8 3.1 v dynamic output section/oscillator section v trigger internal trigger voltage C 5.1 5.15 5.2 v C duty cycle C 4 15 18 % t osc oscillation period v cc =5v 18 30 37.5 s i trigger internal trigger current v cc =v trigger , vcc/vdet pin is separately connected to a 20 resistor 30 60 80 ma t dis minimum period C 18 30 37.5 ms v dis discharge voltage C 5.13 5.3 5.38 v i dis discharge current v cc =v dis +0.1v 1.5 3 4.5 ma v dis - v trigger trigger discharger gap C 30 110 C mv v ovp overshoot voltage for discharge C 5.64 5.74 5.84 v i ovp overshoot current for discharge v cc =v ovp +0.1v, vcc pin is connected to a 20 resistor 40 C 1 00 ma synchronous voltage detect v thon gate turn - o n threshold C 0 C 1 v v thoff gate turn - o ff threshold C - 13 - 9 - 5 mv t don turn - o n delay time from v thon to v drisr =1v C 70 130 ns t doff turn - o ff propagation delay time from v thoff to v drisr =3v C 100 1 50 ns t rg gate turn - o n rising time from 1v to 3v, c l =4.7nf C 50 100 ns t fg gate turn - o ff falling time from 3v to 1v, c l =4.7nf C 50 100 ns t leb_s minimum on time (v det - v cc )*t onp = 25v s 0.9 1. 8 2. 7 s t leb_l (v det - v cc )*t onp = 50 v s C C 6. 5 v drisr_high drive output voltage v cc =5v 3.7 C C v v s_min sr minimum operating voltage (note 6 ) C C C 4.5 v t ovp_last added ovp discharge time C C 2. 0 C ms kqs (note 7 ) (v det - v cc )*t onp = 25v s 0.325 C 0.625 ma* s note s : 6. this item specifies the minimum sr operating voltage of v in_dc , v in_dc n ps *v s_min . 7. this item is used to specify the value of r aref .
a pr343 09 c document number: ds 37492 rev. 3 - 2 5 of 13 www.diodes.com november 2014 ? diodes incorporated a pr34 3 09 c a product line of diod es incorporated new product electrical characteristics ( @ t a = + 25c , unless otherwise specified . cont. ) mosfet st atic characteristics parameters symbol conditions min typ max unit drain to source breakdown voltage v dss(br) v gs =0v, i d =0.25ma 62 C 100 v gate threshold voltage v gs(th) v ds =v gs , i d =0.25ma 0. 7 1.1 2 v zero gate voltage drain current i dss v ds =50v, v gs =0 v C C 80 n a gate to source leakage current i gss v gs =10v, v ds =0v C C 7 a drain to source on - state resistance r ds(on) v gs =4.5v, i d = 3 a C 9 C m mosfet dynamic characteristics parameters symbol conditions min typ max unit input capacitance c iss v gs =0v, v ds =25v, f=1mhz C 1316 C pf output capacitance c oss C 97 C r everse transfer capacitance c rss C 85 C gate to source charge q gs v gs =0v to 10v, v dd =25v, i d =15a C 3.2 C nc gate to drain charge (miller charger) q gd C 5.7 C total gate charge q g v gs = 4.5 v C 15.2 C gate resistance r g C C 0.85 C
a pr343 09 c document number: ds 37492 rev. 3 - 2 6 of 13 www.diodes.com november 2014 ? diodes incorporated a pr34 3 09 c a product line of diod es incorporated new product performance characteristics startup voltage vs . temperature uv lo vs . temperature internal trigger voltage vs . temperature internal trigger current vs . temperature overshoot voltage for discharge vs . temperature overshoot current for discharge vs . temperature -40 -20 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 overshoot current for discharge (ma) temperature ( o c) -40 -20 0 20 40 60 80 100 120 140 0 10 20 30 40 50 60 70 80 internal trigger current (ma) temperature ( o c) -40 -20 0 20 40 60 80 100 120 140 2.00 2.25 2.50 2.75 3.00 3.25 3.50 startup voltage (v) temperature ( o c) -40 -20 0 20 40 60 80 100 120 140 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 internal trigger voltage (v) temperature ( o c) -40 -20 0 20 40 60 80 100 120 140 1.0 1.5 2.0 2.5 3.0 3.5 uvlo (v) temperature ( o c) -40 -20 0 20 40 60 80 100 120 140 5.0 5.2 5.4 5.6 5.8 6.0 overshoot voltage for discharge (v) temperature ( o c)
a pr343 09 c document number: ds 37492 rev. 3 - 2 7 of 13 www.diodes.com november 2014 ? diodes incorporated a pr34 3 09 c a product line of diod es incorporated new product performance characteristics ( cont.) gate turn off threshold vs . temperature kqs (see note 7) vs . temperature operating current vs . temperature drain to source on - state resistance vs . temperature -40 -20 0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 16 18 20 drain to source on-state resistance (m ? ) temperature ( o c) -40 -20 0 20 40 60 80 100 120 140 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 kqs (ma* ? s) temperature ( o c) -40 -20 0 20 40 60 80 100 120 140 -40 -30 -20 -10 0 gate turn off threshold (mv) temperature ( o c) -40 -20 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 operating current ( ? a) temperature ( o c)
a pr343 09 c document number: ds 37492 rev. 3 - 2 8 of 13 www.diodes.com november 2014 ? diodes incorporated a pr34 3 09 c a product line of diod es incorporated new product output voltage detect f unction description figure 1 . typical waveforms of APR34309C when v cc is beyond power - on voltage (v on ), the APR34309C starts up. the vdet pin asserts a periodical pulse and the oscillation period is t osc . when v cc is beyond the trigger voltage (v trigger ), the periodical pulse at vdet pin is discontinued. when v cc is beyond the discharge voltage (v dis ), the discharge circuit will be enabled, and a 3ma current ( i dis ) will flow into vcc pin. when v cc is higher than the overshoo t voltage (v ovp ), the a pr343 09 c will enable a discharge circuit, the discharge current ( i ovp ) will last t ovp_last time. after the t ovp_last time, APR34309C will stop the discharge current and detect vcc voltage again. if v cc is still higher than v ovp , the t ovp_last time discharge current will be enable d again. once the ovp discharge current is asserted , the periodical pulse at vdet pin will be disabled. when the v cc falls below the power - off voltage (v off ), the APR34309C will shut down. o peration descri ption mosfet driver the operation of the sr is described with timing diagram shown in f igure 2 . APR34309C monitors the mosfet d rain - s ource voltage. when the d rain voltage is lower than the turn - on threshold voltage v thon , the ic outputs a positive drive v oltage after a turn - on delay time (t don ). the mosfet will turn on and the current will transfer from the body diode into the mosfets channel. in the process of d rain current decreasing linearly toward zero, the d rain - s ource voltage rises synchronically. when it rises over the turn off threshold voltage v thoff , APR34309C pulls the drive signal down after a turn - off delay (t doff ). figure 2 . typical waveforms of APR34309C i , v t t i s v d e t v d r i s r v t h o n v t h o f f 0 . 1 v d r i s r 0 . 9 v d r i s r 0 . 1 v d r i s r 0 . 9 v d r i s r t r g t d o n t f g t d o f f 0 0 v d e t v c c v o n v t r i g g e r v o f f t o s c v o v p v t r i g g e r i v c c i d i s u v l o v d i s v d i s i o v p t d i s t d i s t d i s t d i s t d i s t d i s t o s c t o v p _ l a s t
a pr343 09 c document number: ds 37492 rev. 3 - 2 9 of 13 www.diodes.com november 2014 ? diodes incorporated a pr34 3 09 c a product line of diod es incorporated new product o peration description ( cont.) minimum on time when the controlled mosfet gate is turned on, some ringing noise is generated. the minimum on - time timer blanks the v thoff comparator, keeping the controlled mosfet on for at least the minimum on time. if v thoff falls below the threshold before minimum on t ime expi res , the mosfet will keep on until the end of the minimum on time. the minimum on time is in direct proportion to the (v det - v cc )*t onp . when (v det - v cc )*t onp =5v* 5 s , the minimum on time is about 1.8 s. the value and meaning of aref resistor as to dcm operation flyback converter, after secondary rectifier stop s conduction the primary m osfet drain - to - source ringing waveform is result ed from the resonant of primar y inductance and equivalent switch device output capacitance. this ringing waveform probably leads to synchronous rectifier error conduction. to avoid this fault happening, APR34309C has a special function design by means of volt - second product detecting . from the sensed voltage of vdet pin to see, the volt - second product of voltage above vcc at primary switch on time is much higher than the volt - second product of each cycle ringing voltage above v cc . therefore, before every time synchronous rectifier turni ng on, APR34309C judges if the detected volt - second product of vdet voltage above v cc is higher than a threshold and then turn on synchronous rectifier. the purpose of aref resistor is to determine the volt - second product threshold. APR34309C has a paramet er, kqs, which converts r aref value to volt - second product, in general, area1 and area3 value depend on system design and are always fixed after system design frozen . as to bcd psr design, the area1 value changes with primary peak current value and area3 value generally keeps constant at all of conditions. so the aref resistor design should consider the worst case, the minimum primary peak current condition. since of system desi gn parameter distribution, area 1 and area3 have modera te tolerance. so area2 should be designed between the middle of area1 and area3 to keep enough design margin. figure 3 . aref function sr minimum operating voltage APR34309C sets a minimum sr operating voltage by comparing the difference between v det and output voltage (v cc ). the value of v det C v cc must be higher than its internal reference, then APR34309C will begin to integrate the area of (v det C v cc )*t onp . if not, the area integrating will not begin an d the sr driver will be disabled. kqs * r 2 area aref ? v d e t v c c a r e a 3 a r e a 1 = ( v d e t - v c c ) * t o n p a r e a 2 = k q s * r a r e f area1 kqs * r 3 area aref ? ?
a pr343 09 c document number: ds 37492 rev. 3 - 2 10 of 13 www.diodes.com november 2014 ? diodes incorporated a pr34 3 09 c a product line of diod es incorporated new product ordering information package temperature range part number marking id packing so - 8ep - 40 to +85 ? c APR34309C m p tr - g1 343 09 c m p - g1 4000/ tape & reel marking information ( top view) first an d s econd li nes: logo and marking id third l ine: date code y: y ear ww: w ork w eek of m olding a: a ssembly h ouse c ode xx: 7 th and 8 th d igits of batch no. 343 09 c m p - g1 ywwaxx - a p r 3 4 3 0 9 c x x x x - x x p a c k i n g p a c k a g e t r : t a p e & r e e l m p : s o - 8 e p g 1 : g r e e n p r o d u c t n a m e r o h s / g r e e n
a pr343 09 c document number: ds 37492 rev. 3 - 2 11 of 13 www.diodes.com november 2014 ? diodes incorporated a pr34 3 09 c a product line of diod es incorporated new product package outline dimensions (all d imensions in mm (inch) . ) (1) package t ype: s o - 8 ep 8 5 . 8 0 0 ( 0 . 2 2 8 ) 6 . 2 0 0 ( 0 . 2 4 4 ) 1 . 2 7 0 ( 0 . 0 5 0 ) 0 . 4 0 0 ( 0 . 0 1 6 ) 3 . 8 0 0 ( 0 . 1 5 0 ) 4 . 0 0 0 ( 0 . 1 5 7 ) 0 . 5 1 0 ( 0 . 0 2 0 ) 0 . 0 5 0 ( 0 . 0 0 2 ) 0 . 1 5 0 ( 0 . 0 0 6 ) 4 . 7 0 0 ( 0 . 1 8 5 ) 1 . 2 7 0 ( 0 . 0 5 0 ) t y p 0 0 . 2 5 0 ( 0 . 0 1 0 ) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 5 0 ( 0 . 0 5 3 ) 1 . 5 5 0 ( 0 . 0 6 1 ) 2 . 1 1 0 ( 0 . 0 8 3 ) 2 . 7 1 0 ( 0 . 1 0 7 ) 2 . 7 5 0 ( 0 . 1 0 8 ) 3 . 4 0 2 ( 0 . 1 3 4 ) 5 . 1 0 0 ( 0 . 2 0 1 ) n o t e : e j e c t h o l e , o r i e n t e d h o l e a n d m o l d m a r k i s o p t i o n a l . 0 . 3 0 0 ( 0 . 0 1 2 )
a pr343 09 c document number: ds 37492 rev. 3 - 2 12 of 13 www.diodes.com november 2014 ? diodes incorporated a pr34 3 09 c a product line of diod es incorporated new product suggested pad layout (1) package t ype: so - 8ep dim ensions z (mm)/(inch) g (mm)/(inch) x (mm)/(inch) y (mm)/(inch) x1 (mm)/(inch) y1 (mm)/(inch) e (mm)/(inch) value 6.900/0.272 3.900/0.154 0.650/0.026 1.500/0.059 3.600/0.142 2.700/0.106 1.270/0.050 g e x x 1 y y 1 z
a pr343 09 c document number: ds 37492 rev. 3 - 2 13 of 13 www.diodes.com november 2014 ? diodes incorporated a pr34 3 09 c a product line of diod es incorporated new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). d iodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or o ther changes without further notice to this document and any product described herein. diodes incorporated does not assume any liab ility arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or prod ucts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporat ed does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channe l. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall in demnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or u nauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign t rademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporate d products are specifically not authorized for use as critical components in life support devices or systems without the expr ess written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems a re devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to res ult in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or eff ectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - rel ated requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorpor ated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 4 , diodes incorp orated www.diodes.com

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