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| silicon npn power transistors 2SD799 description ? with to-220 package ?high dc current gain ? darlington applications ? igniter applications ? high voltage switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 600 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 5 v i c collector current 6 a i b base current 1 a p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? tiger electronic co.,ltd
2 silicon npn power transistors 2SD799 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 400 v v cesat collector-emitter saturation voltage i c =4a ;i b =0.04a 2.0 v v besat base-emitter saturation voltage i c =4a; i b =0.04a 2.5 v i cbo collector cut-off current v cb =600v; i e =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 3.0 ma h fe-1 dc current gain i c =2a ; v ce =2v 600 h fe-2 dc current gain i c =4a ; v ce =2v 100 v ecf diode forward voltage i e =4a; i b =0 3.0 v c ob collector output capacitance f=1mhz;v cb =50v 35 pf 3 silicon npn power transistors 2SD799 package outline fig.2 outline dimensions |
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