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| inchange semiconductor isc product specification isc silicon pnp power transistors 2SB539 description collector-emitter breakdown voltage- : v (br)ceo = -120v(min) high power dissipation- : p c = 100w(max)@t c =25 complement to type 2sd287 applications designed for audio frequency power amplifier applications. recommended for 70~80w high-fidelity audio frequency amplifier output stage. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -130 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -6 v i c collector current-continuous -10 a i cm collector current-pulse -15 a p c collector power dissipation @t c =25 100 w t j junction temperature 150 t stg storage temperature -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistors 2SB539 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = -6a; i b = -0.6a b -2.0 v v be (sat) base-emitter saturation voltage i c = -6a; i b = -0.6a b -2.0 v i cbo collector cutoff current v cb = -120v; i e = 0 -0.1 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -0.1 ma h fe-1 dc current gain i c = -2a; v ce = -5v 40 200 h fe-2 dc current gain i c = -5a; v ce = -5v 25 c ob output capacitance i e = 0; v cb = -10v; f= 1mhz 420 pf f t current-gain?bandwidth product i c = -0.2a; v ce = -10v 7 mhz ? h fe- 1 classifications s r q 40-80 60-120 100-200 isc website www.iscsemi.cn |
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