<~!>e.ml-l,onailctoi l/^i , li ne, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 devices 2n3838 2N4854 2N4854u maximum ratings ratings collector-emitter voltage collector-base voltage emitter-base voltage collector current sym vceo vcbo vebo ic total power dissipation @ ta = +25c @tc=+25c(1) operating & storage junction temp. range operating & storage junction temp. range lead to case voltage pt tj tsta 2n3838? 40 60 5.0 600 one trans 0.25'2' 07?) total devic e 0.35 1.4 2N4854, u 40 60 5.0 600 one trans 0.30(3> 1.0'" 200 total device 0.60 2.0 -55 to +200 120 unit vdc vdc vdc madc w w c c vdc 1) tc rating do not apply to surface mount devices (2N4854u) 2) for ta > +25c derate linearly 1.43 mw/c (one transistor) 2.00 mw/c (both transistors) 3) for ta > +25c derate linearly 1 .7 1 mw/c (one transistor) 3 .43 mw/t (both transistors) 4) for tc > +25c derate linearly 4.0 mw/c (one transistor) 8.0 mw/c (both transistors) 5) for tc > +25c derate linearly 5.71 mw/c (one transistor) 1 1,43 mw/c (both transistors) to-78* 2N4854 6 pin surface mount* 2N4854u 1 _1 i 6 lead flatpack* 2n3838 electrical characteristics (ta = 2sc unless otherwise noted) ?see milprf19500/421 for package dimensions. characteristics jjjtnbol min. max. unit off characteristics collector-emitter breakdown current ic = 10 madc collector-base cutoff current vcb = 60 vdc collector-base cutoff current vcb = 50 vdc 2n3838 2N4854. u emitter-base cutoff current veb = 5.0 vdc veb = 3.0 vdc v(br)ceo icbo(l) icboo iebo 40 10 50 10 10 10 dc (oadc tjadc jjadc r)adc nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time ofaoing to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (con't) characteristics symbol min. max. i unit | on characteristics forward-current transfer ratio ic = 150 madc, vce ~ 1 vdc ic = 100 fjado, vce = 10 vdc ic= 1.0 madc, vce =10 vdc ic = 10 madc, vce = 10 vdc ic = 150 madc, vce = 10 vdc ic = 300 madc, vce = 10 vdc collector-emitter saturation voltage ic = 150 madc, ib = 15 madc base-emitter saturation voltage ic = 150 madc, ib = 15 madc hfe vcel'sat) vbe(sat) 50 35 50 75 35 0.80 0.40 1.25 vdc vdc dynamic characteristics forward current transfer ratio ic = 1.0 madc, vce = 10 vdc, f = 1.0 khz forward current transfer ratio, magnitude ic = 20 madc, vce = 10 vdc, f = 100 mhz small-signal common emitter input impedance ic = 1.0 madc, vce " 10 vdc, f - 1.0 khz small-signal common emitter output admittance ic = 1.0 madc, vce = 10 vdc, f- 1.0 khz output capacitance vcb = 10 vdc, ie = 0, 100 khz < f 1.0 mhz noise figure ic = 100 (jadc, vce = 10 vdc, f = 1.0 khz, ro =1.0 kq ha ha hie h? cobo nf 60 2.0 1.5 300 10 9.0 50 8.0 8.0 kq (ihmo pf db switching characteristics turn-on time (see figure 4 of mil-prf- 19500/421) turn-off time (see figure 5 of mil-prf-19500/421) pulse response (see figured of mil-prf-19500/421) collector-emitter non-latching voltage (see figure 7 of mil-prf-19500/421) 'on 'off 'on + 'off vceo 40 45 300 18 r|s ns t|s vdc
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