? 2005 ixys all rights reserved advance technical information symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1700 v temperature coefficent 0.10 %/k v ge(th) i c = 250 a, v ce = v ge 3.0 6.0 v temperature coefficent - 0.24 %/k i ces v ce = 0.8 v ces t j = 25 c10 a v ge = 0 v t j = 125 c 100 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 4.7 6.0 v t j = 125 c 5.0 v v ces = 1700 v i c25 = 30 a v ce(sat) = 6.0 v t fi = 50 ns ixbh 28n170a ixbt 28n170a c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixbh) features z high blocking voltage z jedec to-268 surface and jedec to-247 ad z low conduction losses z high current handling capability z mos gate turn-on - drive simplicity z molding epoxies meet ul 94 v-0 flammability classification applications z ac motor speed control z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z capacitor discharge circuits advantages z high power density z suitable for surface mounting z easy to mount with 1 screw, (isolated mounting screw hole) ds99333(02/05) symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c30a i c90 t c = 90 c14a i cm t c = 25 c, 1 ms 60 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm =60 a (rbsoa) clamped inductive load v ces = 1350 v p c t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering smd devices for 10 s 260 c m d mounting torque (m3) (to-247) 1.13/10nm/lb.in. weight to-247 ad 6 g to-268 4 g to-268 (ixbt) (tab) g e high voltage, high gain bimosfet tm monolithic bipolar mos transistor
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 dim. mi llimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 ad outline symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 12 17 s pulse test, t 300 s, duty cycle 2 % c ies 2800 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 132 pf c res 42 pf q g 105 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 20 nc q gc 35 nc t d(on) 35 ns t ri 36 ns t d(off) 265 ns t fi 50 ns e off 1.2 mj t d(on) 35 ns t ri 36 ns e on 0.7 mj t d(off) 290 ns t fi 150 ns e off 2.3 mj r thjc 0.42 k/w r thck (to-247) 0.25 k/w reverse diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, pulse test, 3.0 v t < 300 us, duty cycle d < 2% i rm i f = i c90 , v ge = 0 v, -di f /dt = 50 a/us 25 a t rr v r = 100 v 360 ns inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 850 v, r g = r off = 10 ? inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 850 v, r g = r off = 10 ? min recommended footprint to-268 outline ixbh 28n170a ixbt 28n170a
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