BAS21N1PT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t f a s t s w i t c h i n g d i o d e v o l t a g e r a n g e 2 5 0 v o l t s c u r r e n t 2 0 0 m a m p e r e e l e c t r i c a l c h a r a c t e r i s t i c s ( a t t a = 2 5 o c u n l e s s o t h e r w i s e n o t e d ) notes : 2006-07 m a x i m u m a v e r a g e r e v e r s e c u r r e n t a t r a t i e d d c b l o c k i n g v o l t a g e c h a r a c t e r i s t i c s s y m b o l units 1 . 0 0 1 . 2 5 @ t a = 2 5 o c @ i f = 1 0 0 m a @ i f = 2 0 0 m a @ t j = 1 0 0 o c 1 0 0 1 5 n a m p s u a m p s v o l t s m a x i m u m r a t i n g e s ( a t t a = 2 5 o c u n l e s s o t h e r w i s e n o t e d ) r a t i n g s m a x i m u m r e c u r r e n t p e a k r e v e r s e v o l t a g e m a x i m u m r m s v o l t a g e m a x i m u m d c b l o c k i n g v o l t a g e m a x i m u m a v e r a g e f o r w a r d r e c t i f i e d c u r r e n t a t t l = 1 0 0 o c n o n - r e p e t i t i v e p e a k f o r w a r d s u r g e c u r r e n t t y p i c j u n c t i o n c a p a c i t a n c e ( n o t e 2 ) m a x i m u m r e v e r s e r e c o v e r y t i m e ( n o t e 3 ) s y m b o l v r r m v r m s v d c i o c j v o l t s m a x i m u m i n s t a n t a n e o u s f o r w a r d v o l t a g e v f i r i f s m BAS21N1PT units v o l t s v o l t s v o l t s m a m p s 2 0 0 2 . 5 0 . 5 @ t = 1 . 0 u s @ t = 1 . 0 s 5 . 0 5 0 a m p s p f n s t y p i c a l t h e r m a l r e s i s t a n c e ( n o t e 1 ) s t o r a g e a n d o p e r a t i n g t e m p e r a t u r e r a n g e t j , t s t g 833 - 6 5 t o + 1 5 0 o c / w o c 2 5 0 BAS21N1PT 1 4 1 2 0 0 t r r r j a 1. thermal resistance ( junction to lead ) : pc board mounted on 0.06 x 0.06" ( 0.15x 0.15mm ) copper pad area. 2. measured at 1.0 mh z and applied reverse voltage of 0 volt. 3. i f =i r =30 ma, i rr =0.1xi r , r l =100 ohms circuit (1) (2) (3) breakdown voltage(minimun) bv 250 volts application feature * small surface mounting type. (fbpt-923) * high speed. (t rr= 30nsec typ.) * suitable for high packing density. construction * silicon epitaxial planar * ultra high speed switching 1.00.05 0.50.05 0.050.04 0.680.05 0.260.05 0.420.05 0.30.05 0.25(ref.) 0.37(ref.) dimensions in millimeters 1.00.05 fbpt-923 fbpt-923
r a t i n g c h a r a c t e r i s t i c c u r v e s ( BAS21N1PT) 0 0 1 2 5 1 0 0 7 5 5 0 2 5 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 a m b i e n t t e m p e r a t u r e , ( o c ) a v e r a g e f o r w a r d c u r r e n t , ( % ) 0 1 2 5 1 0 2 0 5 0 1 0 0 2 0 0 5 0 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 f o r w a r d c u r r e n t , ( m a ) f o r w a r d v o l t a g e , ( v ) f i g . 2 - f o r w a r d c h a r a c t e r i s t i c s r e v e r s e c u r r e n t , ( n a ) r e v e r s e v o l t a g e , ( v ) f i g . 4 - r e v e r s e c h a r a c t e r i s t i c s 0 . 1 1 u 1 0 u 1 0 0 1 1 0 5 0 1 0 0 2 0 0 1 5 0 0 0 0 4 5 2 2 4 6 8 1 0 1 2 1 4 1 6 f = 1 m h z j u n c t i o n c a p a c i t a n c e , ( p f ) r e v e r s e v o l t a g e , ( v ) 1 8 2 0 f i g . 3 - t y p i c a l j u n c t i o n c a p a c i t a n c e 7 5 o c 5 0 o c t a = 1 0 0 o c 0 o c 2 5 o c - 2 5 o c f i g . 1 - t y p i c a l f o r w a r d c u r r e n t d e r a i n g c u r v e 5 0 o c t a = 8 5 o c 0 o c 2 5 o c - 3 0 o c
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