powerdi is a registered trademark of diodes incorpo rated. dmp3010lpsq document number: ds36683 rev. 4 - 2 1 of 7 www.diodes.com february 2015 ? diodes incorporated dmp3010lps q p-channel enhancement mode mosfet powerdi ? product summary v (br)dss r ds(on) i d t a = +25c -30v 7.5m @ v gs = -10v -36a 10m @ v gs = -4.5v -31a description this new generation 30v p-channel enhancement mode mosfet is designed to minimize r ds(on) and yet maintain superior switching performance. this device is ideal for use in n otebook battery power management and load switch. applications ? notebook battery power management ? dc-dc converters ? load switch features ? thermally efficient package - cooler running appli cations ? high conversion efficiency ? low rds(on) ? minimizes on state losses ? low input capacitance ? fast switching speed ? <1.1mm package profile ? ideal for thin applicatio ns ? esd hbm protected up to 1kv ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliabilit y ? ppap available mechanical data ? case: powerdi ? 5060-8 ? case material: molded plastic, ?green? molding com pound; ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram below ? weight: 0.097 grams (approximate) ordering information (notes 4 & 5) part number qualification case packaging dmp3010lpsq-13 automotive powerdi ? 5060-8 2,500 / tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/ eu (rohs 2) compliant. all applicable rohs exemptio ns applied. 2. see http://www.diodes.com/quality/lead_free.htm l for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and a re ppap capable. automotive, aec-q101 and standard products are electrically and thermally the same, except where specified. for more informat ion, please refer to http://www.diodes.com/quality/ product_grade_definitions/. 5. for packaging details, go to our website at http ://www.diodes.com/products/packages.html. marking information bottom view top view pin configuration top view green powerdi5060-8 pin1 internal schematic d s g powerdi5060-8 s g d s d d d s p 3010ls yy ww = manufacturer?s marking p3010ls = product type marking code yyww = date code marking yy = year (ex: 13 = 2013) ww = week (01 - 53)
powerdi is a registered trademark of diodes incorpo rated. dmp3010lpsq document number: ds36683 rev. 4 - 2 2 of 7 www.diodes.com february 2015 ? diodes incorporated dmp3010lps q maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain current (note 7) v gs = 10v steady state t a = +25c t a = +70c i d -36 -29 a continuous drain current (note 7) v gs = 4.5v steady state t a = +25c t a = +70c i d -31 -25 a continuous drain current (note 6) v gs = 10v steady state t a = +25c t a = +70c i d -14.5 -11.5 a pulsed drain current (notes 6 & 9) i dm -100 a avalanche current (notes 10 & 11) i ar -17.5 a repetitive avalanche energy (notes 10 & 11) l = 1m h e ar 153 mj thermal characteristics characteristic symbol value unit power dissipation (note 6) p d 2.18 w thermal resistance, junction to ambient @t a = +25c (note 6) r ja 55 c/w power dissipation (note 7) p d 14.37 w thermal resistance, junction to ambient @t a = +25c (note 7) r ja 8.7 c/w power dissipation (notes 7 & 8) p d 58.7 w thermal resistance, junction to case @t c = +25c (notes 7 & 8) r j c 2.13 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 1 1 ) drain-source breakdown voltage bv dss -30 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current i dss ? ? -1 a v ds = -30v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 1 1 ) gate threshold voltage v gs(th) -1.1 -1.6 -2.1 v v ds = v gs , i d = -250a static drain-source on-resistance r ds(on) ? 5.7 7.5 m v gs = -10v, i d = -10a ? 7.2 10 v gs = -4.5v, i d = -10a forward transfer admittance |y fs | ? 30 ? s v ds = -15v, i d = -10a diode forward voltage v sd ? -0.65 -1 v v gs = 0v, i s = -1a dynamic characteristics (note 1 2 ) input capacitance c iss ? 6,234 ? pf v ds = 15v, v gs = 0v, f = 1mhz output capacitance c oss ? 1,500 ? pf reverse transfer capacitance c rss ? 774 ? pf gate resistance r g ? 1.28 ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = -10v) q g ? 126.2 ? nc v ds = -15v, i d = -10a total gate charge (v gs = -4.5v) q g ? 59.2 ? nc v ds = -15v, v gs = -4.5v, i d = -10a gate-source charge q gs ? 16.1 ? nc gate-drain charge q gd ? 15.7 ? nc turn-on delay time t d(on) ? 11.4 ? ns v ds = -15v, v gen = -10v, r g = 6 , i d = -1a turn-on rise time t r ? 9.4 ? ns turn-off delay time t d(off) ? 260.7 ? ns turn-off fall time t f ? 99.3 ? ns notes: 6. device mounted on fr-4 pcb with 1-inch square 2 oz. copper, single sided. 7. device mounted on fr-4 pcb with infinite heat sink. 8. r jc is guaranteed by design while r ca is determined by the user?s board design. 9. repetitive rating, pulse width limited by jun ction temperature, 10s pulse, duty cycle = 1%. 10. i ar and e ar rating are based on low frequency and duty cycles to keep t j = +25c. 11. short duration pulse test used to minimize se lf-heating effect. 12. guaranteed by design. not subject to productio n testing.
powerdi is a registered trademark of diodes incorpo rated. dmp3010lpsq document number: ds36683 rev. 4 - 2 3 of 7 www.diodes.com february 2015 ? diodes incorporated dmp3010lps q 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 fig. 1 typical output characteristic -v , drain-source voltage (v) ds - i , d r a i n c u r r e n t ( a ) d v = -2.0v gs v = -2.5v gs v = -3.0v gs v = -3.5v gs v = -5.0v gs v = -4.5v gs v = -10v gs 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristic -v , gate-source voltage (v) gs 0 5 10 15 20 25 30 - i , d r a i n c u r r e n t ( a ) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -5v ds 0 0.004 0.008 0.012 0.016 0.020 0 5 10 15 20 25 30 fig. 3 typical on-resistance vs. drain current and gate voltage -i , drain-source current (a) d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) v = -4.5v gs v = -10v gs 0 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0 5 10 15 20 25 30 -i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -4.5v gs 0.6 0.8 1.0 1.2 1.4 1.6 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , d r a i n - s o u r c e on-resistance (normalized) dson v = -10v i = -20a gs d v = -4.5v i = -10a gs d fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0 0.004 0.008 0.012 0.016 0.020 r , d r a i n - s o u r c e on-resistance (normalized) dson v = -10v i = -20a gs d v = -4.5v i = -10a gs d
powerdi is a registered trademark of diodes incorpo rated. dmp3010lpsq document number: ds36683 rev. 4 - 2 4 of 7 www.diodes.com february 2015 ? diodes incorporated dmp3010lps q 0 0.5 1.0 1.5 2.0 2.5 fig. 7 gate threshold variation vs. ambient tempera ture -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a - v , g a t e t h r e s h o l d v o l t a g e ( v ) gs(th) i = -1ma d i = -250a d 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 fig. 8 diode forward voltage vs. current -v , source-drain voltage (v) sd - i , s o u r c e c u r r e n t ( a ) s t = 25c a 0 4 8 12 16 20 fig. 9 typical total capacitance -v , drain-source voltage (v) ds 100 1,000 10,000 c , j u n c t i o n c a p a c i t a n c e ( p f ) t c iss c rss c oss f = 1mhz 0 5 10 15 20 25 30 fig. 10 typical leakage current vs. drain-source vo ltage -v , drain-source voltage (v) ds 1 10 100 1,000 100,000 - i , l e a k a g e c u r r e n t ( n a ) dss 10,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 20 40 60 80 100 120 140 q , otal gate charge (nc) fig. 11 gate-source voltage vs. total gate charge g t 0 2 4 6 8 10 - v , a t e - s o u r c e v o l t a g e ( v ) gs g v = -15v i = -10a ds d 0.1 1 10 100 -v , drain-source voltage (v) fig. 12 soa, safe operation area ds 100 - i , d r a i n c u r r e n t ( a ) d 10 1 0.1 0.01 t = 150c t = 25c j(max) a v = -10v single pulse gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w r limited ds(on)
powerdi is a registered trademark of diodes incorpo rated. dmp3010lpsq document number: ds36683 rev. 4 - 2 5 of 7 www.diodes.com february 2015 ? diodes incorporated dmp3010lps q package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. powerdi ? 5060-8 0.001 0.01 0.1 1 10 100 1,000 t , pulse duration time (s) 1 fig. 13 transient thermal response d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5 r (t) = r(t) * ja r r = 97c/w duty cycle, d = t1/t2 ja ja 1 r , t r a n s i e n t t h e r m a l r e s i s t a n c e (t) 0.1 0.01 0.001 powerdi ? 5060 - 8 dim min max typ a 0.90 1.10 1.00 a1 0.00 0.05 - b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 d 5.15 bsc d1 4.70 5.10 4.90 d2 3.70 4.10 3.90 d3 3.90 4.30 4.10 e 6.15 bsc e1 5.60 6.00 5.80 e2 3.28 3.68 3.48 e3 3.99 4.39 4.19 e 1.27 bsc g 0.51 0.71 0.61 k 0.51 - - l 0.51 0.71 0.61 l1 0.100 0.200 0.175 m 3.235 4.035 3.635 m1 1.00 1.40 1.21 10 12 11 1 6 8 7 all dimensions in mm d1 e1 a l k m l1 d2 g e2 detail a 0(4x) a1 c e d e 1 detail a b (8x) e/2 1 01 (4x) m1 b2 (4x) b3 (4x) e3 d3
powerdi is a registered trademark of diodes incorpo rated. dmp3010lpsq document number: ds36683 rev. 4 - 2 6 of 7 www.diodes.com february 2015 ? diodes incorporated dmp3010lps q suggested pad layout please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 4.100 x2 0.755 x 3 4.420 x 4 5.610 y 1.270 y1 0.600 y2 1.020 y3 0.295 y 4 1.825 y5 3.810 y6 0.180 y7 6.610 y7 x3 y2 y5 x1 g1 x c y(4x) g x2 y3 y4 y6 x4 y1
powerdi is a registered trademark of diodes incorpo rated. dmp3010lpsq document number: ds36683 rev. 4 - 2 7 of 7 www.diodes.com february 2015 ? diodes incorporated dmp3010lps q important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com
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