dmp3010lk3 document number: ds35716 rev. 5 - 2 1 of 7 www.diodes.com july 2013 ? diodes incorporated dmp3010lk3 p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) max i d t a = +25c -30v 8m ? @ v gs = -10v -17a 10.2m ? @ v gs = -4.5v -14.5a description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? dc-dc converters ? power management functions ? backlighting features and benefits ? low input capacitance ? low on-resistance ? fast switching speed ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: to252 (dpak) ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? tin finish annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.33 grams (approximate) ordering information (note 4 & 5) part number compliance case packaging dmp3010lk3-13 standard to252 2,500/tape & reel dmp3010lk3q-13 automotive to252 2,500/tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (roh s 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap capabl e. automotive, aec-q101 and standard products are electrically and thermally the same, except where specified. for more information, please refer to http://www .diodes.com/quality/product_grade_definitions/. 5. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html marking information equivalent circuit gs d d top view pin-out top view to252 ? green d s g yyww p3010l logo part n o . . year: 11 = 2011 xth week: 01 ~ 53 e3
dmp3010lk3 document number: ds35716 rev. 5 - 2 2 of 7 www.diodes.com july 2013 ? diodes incorporated dmp3010lk3 maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain current (note 7) v gs = -10v steady state t a = +25c t a = +70c i d -17.0 -13.0 a t<10s t a = +25c t a = +70c i d -27.0 -21.0 a continuous drain current (note 7) v gs = -4.5v steady state t a = +25c t a = +70c i d -14.5 -11.5 a t<10s t a = +25c t a = +70c i d -23.0 -18.0 a pulsed drain current (10s pulse, duty cycle = 1%) i dm -100 a maximum body diode forward current (note 7) i s 5.5 a avalanche current (note 8) i as 47 a avalanche energy (note 8) e as 113 mj thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6) p d 1.7 w thermal resistance, junction to ambient (note 6) steady state r ? ja 72 c/w t<10s 29 c/w total power dissipation (note 7) p d 3.4 w thermal resistance, junction to ambient (note 7) steady state r ? ja 37 c/w t<10s 15 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9) drain-source breakdown voltage bv dss -30 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current i dss ?? ?? -1 a v ds = -30v, v gs = 0v gate-source leakage i gss ? ? ? 100 na v gs = ? 20v, v ds = 0v on characteristics (note 9) gate threshold voltage v gs ( th ) -1.1 -1.6 -2.1 v v ds = v gs , i d = -250a static drain-source on-resistance r ds (on) ? 6.5 8 m ? v gs = -10v, i d = -10a ? 7.2 10.2 v gs = -4.5v, i d = -10a forward transfer admittance |y fs | ? 30 ? s v ds = -15v, i d = -10a diode forward voltage v sd ? -0.65 -1.0 v v gs = 0v, i s = -1a dynamic characteristics (note 10) input capacitance c iss ? 6234 ? pf v ds = 15v, v gs = 0v f = 1.0mhz output capacitance c oss ? 1500 ? reverse transfer capacitance c rss ? 774 ? gate resistance r g ?? 1.28 ?? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge q g ? 59.2 ? nc ? v ds = -15v, v gs = -4.5v, i d = -10a gate-source charge q g s ? 16.1 ? gate-drain charge q g d ? 15.7 ? turn-on delay time t d ( on ) ? 11.4 ? ns v ds = -15v, v gen = -10v, r g = 6 ? , i d = -1a turn-on rise time t r ? 9.4 ? turn-off delay time t d ( off ) ? 260.7 ? turn-off fall time t f ?? 99.3 ?? notes: 6. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 7. device mounted on fr-4 substrate pc board, 2oz copper , with thermal bias to bottom layer 1inch square copper plate. 8 .uis in production with l = 0.1mh, t j = +25c. 9. short duration pulse test used to minimize self-heating effect. 10. guaranteed by design. not subject to production testing.
dmp3010lk3 document number: ds35716 rev. 5 - 2 3 of 7 www.diodes.com july 2013 ? diodes incorporated dmp3010lk3 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 -v , drain-source voltage (v) ds figure 1 typical output characteristics -i , d r ain c u r r en t (a) d v = -2.0v gs v = -2.5v gs v = -3.0v gs v = -3.5v gs v = -5.0v gs v = -4.5v gs v = -10v gs 0 0.5 1 1.5 2 2.5 3 -v , gate-source voltage (v) gs figure 2 typical transfer characteristics 0 5 10 15 20 25 30 -i , d r ain c u r r en t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -5v ds 0 0.004 0.008 0.012 0.016 0.020 0 5 10 15 20 25 30 -i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? v = -4.5v gs v = -10v gs 0 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0 5 10 15 20 25 30 -i , drain current (a) d figure 4 typical on-resistance vs. drain current and temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -4.5v gs 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a figure 5 on-resistance variation with temperature r , d r ain-s o u r c e on-resistance (normalized) dson v = -10v i = -20a gs d v = -4.5v i = -10a gs d -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j figure 6 on-resistance variation with temperature 0 0.004 0.008 0.012 0.016 0.020 r , d r ain-s o u r c e on-resistance (normalized) dson v = -10v i = -20a gs d v = -4.5v i = -10a gs d
dmp3010lk3 document number: ds35716 rev. 5 - 2 4 of 7 www.diodes.com july 2013 ? diodes incorporated dmp3010lk3 0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a figure 7 gate threshold variation vs. ambient temperature -v , g a t e t h r es h o ld v o l t a g e (v) gs(th) i = -1ma d i = -250a d 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current -i , s o u r c e c u r r en t (a) s t = 25c a 0 4 8 121620 -v , drain-source voltage (v) ds figure 9 typical total capacitance 100 1,000 10,000 c , j u n c t i o n c a p a c i t a n c e (p f ) t c iss c rss c oss f = 1mhz 0 5 10 15 20 25 30 figure 10 typical leakage current vs. drain-source voltage -v , drain-source voltage (v) ds 1 10 100 1,000 100,000 -i , leaka g e c u r r e n t (na) dss 10,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 20 40 60 80 100 120 140 q , otal gate charge (nc) figure 11 gate-source voltage vs. total gate charge g t 0 2 4 6 8 10 -v , a t e-s o u r c e v o l t a g e(v) gs g v = -15v i = -10a ds d 0 10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) figure 12 single pulse maximum power dissipation p , p eak t r a n sie n t p o we r (w) (pk) single pulse r = 72c/w r (t) = r(t) * r = p * r ? ?? ? ja ja ja ja ja t - t
dmp3010lk3 document number: ds35716 rev. 5 - 2 5 of 7 www.diodes.com july 2013 ? diodes incorporated dmp3010lk3 0 100 200 300 400 500 600 700 0 10 20 30 40 50 60 70 80 i , avalan c he c u r r ent (a) as 0.2 0.4 0.6 0.8 1.0 inductor (mh) figure 13 single-pulse avalanche tested 0.1 0.3 0.5 0.7 0.9 e , avala n c h e e n e r g y (mj) as e as i as starting temperature (t ) = 25c j 0.001 0.01 0.1 1 10 100 1,000 10,000 t1, pulse duration times (sec) figure 14 transient thermal resistance 0.001 0.01 0.1 r(t), t r ansien t t h e r mal r esis t an c e 1 r (t) = r(t) * r ?? ja ja r = 72c/w duty cycle, d = t1/ t2 ? ja d = 0.9 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.50 d = 0.02 d = 0.01 d = 0.005 d = single pulse
dmp3010lk3 document number: ds35716 rev. 5 - 2 6 of 7 www.diodes.com july 2013 ? diodes incorporated dmp3010lk3 package outline dimensions please see ap02002 at http://www.diodes.com/dat asheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. to252 dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 ? ? e ? ? 2.286 e 6.45 6.70 6.58 e1 4.32 ? ? h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 ? all dimensions in mm dimensions value (in mm) z 11.6 x1 1.5 x2 7.0 y1 2.5 y2 7.0 c 6.9 e1 2.3 b3 e 2x b2 d l4 a c2 e a1 l l3 3x b a h a2 e1 x2 c z x1 y1 e1 y2
dmp3010lk3 document number: ds35716 rev. 5 - 2 7 of 7 www.diodes.com july 2013 ? diodes incorporated dmp3010lk3 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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