to ? 220f 1. base 2. collector 3. emitter to-220f plastic-encapsulate transistors KSC5021F transistor (npn) features z high speed switching z high voltage and high reliability z wide aso maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 800 v collector-emitter breakdown voltage v (br)ceo i c =5ma,i b =0 500 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 7 v collector cut-off current i cbo v cb =500v,i e =0 10 a emitter cut-off current i ebo v eb =5v,i c =0 10 a h fe(1) v ce =5v, i c =0.6a 15 50 dc current gain h fe(2) v ce =5v, i c =3a 8 collector-emitter saturation voltage v ce(sat) i c =3a,i b =0.6a 1 v base-emitter saturation voltage v be (sat) i c =3a,i b =0.6a 1.5 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 80 pf transition frequency f t v ce =10v,i c =0.6a 15 mhz classification of h fe (1) rank r o y range 15-30 20-40 30-50 symbol parameter value unit v cbo collector-base voltage 800 v v ceo collector-emitter voltage 500 v v ebo emitter-base voltage 7 v i c collector current 5 a p c collector power dissipation 2 w r ja thermal resistance from junction to ambient 62.5 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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