ie,iis,u , o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 TIS75 n-channel general purpose amplifier ? this device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. ? sourced from process 54. 1 to-92 1. gate 2. source 3. drain absolute maximum ratings* ta=25c unless otherwise noted symbol vdg vgs igf tj. tstg parameter drain-gate voltage gate-source voltage forward gate current operating and storage junction temperature range value 30 -30 10 -55- +150 units v v ma c * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1. these ratings are based on a maximum junction temperature of 150 degrees c. 2 these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. electrical characteristics ta=25c unless otherwise noted symbol parameter test condition min. typ. max. units off characteristics v(br)gss igss ld(off) vgs(off) gate-source breakdown voltage gate reverse current drain cutoff leakage current gate-source cutoff voltage !g=1.0ua,vds = 0 vgs=15v, vos = 0 vgs = 15v, vds = 0, ta = 100c vds=15vvgs = -10v vds=15v, vgs = -10v, ta= 100c vds = 20v, id = 4.0na -30 -0.8 -2.0 -5.0 -2.0 -5.0 -4.0 v na ma na ma v on characteristics * idss rds(on) zero-gate voltage drain current * drain-source on resistance vds=15v,vgs = 0 vds < 0.1v, vgs = 0 8 80 60 ma n small signal characteristics c,ss crss input capacitance reverse transfer capacitance vds = > vgs = -10v, f= 1.0mhz vds=0, vgs = -10v, f = 1.0mhz 18 8.0 pf pf switching characteristics tr ton toff rise time turn-on time turn-off time vgs(off) = -4.0v, vgs(on) = 0, id = 5.0ma, vds = 10v 10 10 100 ns ns ns ' pulse test: pulse wdth < soo^s, duty cycle < 3.0% nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
thermal characteristics ta=25c unless otherwise noted symbol pd rejc r6ja parameter total device dissipation derate above 25c thermal resistance, junction to case thermal resistance, junction to ambient max. 350 2.8 125 357 unto mw mw/c uc/w c/w to-92 4.68 0.10 c) sj o 1.27typ [1.27 +0.20] 1.27typ [1.27 0.20] 3.60 0.20
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