smd type features pnp epitaxial planar silicon transistor (resistor built-in typ.) built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo i c =-50 a -50 v collector-emitter breakdown voltage bv ceo i c = -1ma -50 v emitter-base breakdown voltage bv ebo i e =-50 a -5 v collector cut-off current i cbo v cb = -50v -0.5 a emitter cut-off current i ebo v eb =-4v -0.5 a collector-emitter saturation voltage v ce(sat) i c = -10ma , i b = -1ma -0.3 v dc current transfer ratio h fe v ce =-5v,i c = -1ma 100 250 600 input resistance r 1 71013 k transistion frequency f t *v ce = -10v , i e = 5ma , f = 100mhz 250 mhz * characteristics of built-in transistor marking marking 94 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -100 ma collector power dissipation p c 150 mw junction temperature t j 150 storage temperature t stg -55to+150 sales@twtysemi.com 1of 2 http://www.twtysemi.com DTA114TE product specification 4008-318-123
smd type electrical characteristics curves equivalent circuit DTA114TE sales@twtysemi.com 2of 2 http://www.twtysemi.com product specification 4008-318-123
|