 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| to ? 126c 1. emitter 2. collector 3. base to-126c plastic-encapsulate transistors 2SC1162 transistor (npn) features z for low frequency power amplifier applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 35 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 35 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v collector cut-off current i cbo v cb =35v,i e =0 20 a emitter cut-off current i ebo v eb =5v,i c =0 20 a h fe(1) v ce =2v, i c =0.5a 60 320 dc current gain h fe(2) * v ce =2v, i c =1.5a 20 collector-emitter saturation voltage v ce(sat) * i c =2a,i b =200ma 1 v base-emitter voltage v be v ce =2v, i c =1.5a 1.5 v transition frequency f t v ce =2v,i c =0.2a 180 mhz *pulse test: pulse width 300 s, duty cycle 2.0%. classification of h fe(1) rank b c d range 60-120 100-200 160-320 symbol parameter value unit v cbo collector-base voltage 35 v v ceo collector-emitter voltage 35 v v ebo emitter-base voltage 5 v i c collector current 2.5 a p c collector power dissipation 1 w r ja thermal resistance from junction to ambient 125 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
Price & Availability of 2SC1162
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |