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| to - 25 2 -2l 1. base 2. collector 3. emitter to-25 2 -2l plastic-encapsulate transistors 2sc3303 transistor (npn) features z low collector saturation voltage z high speed switching time maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 100 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 80 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 7 v collector cut-off current i cbo v cb =100v,i e =0 1 a emitter cut-off current i ebo v eb =7v,i c =0 1 a h fe(1) v ce =1v, i c =1a 70 240 dc current gain h fe(2) v ce =1v, i c =3a 40 collector-emitter saturation voltage v ce(sat) i c =3a,i b =150ma 0.4 v base-emitter saturation voltage v be(sat) i c =3a,i b =150ma 1.2 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 80 pf transition frequency f t v ce =4v,i c =1a, 20 mhz classification of h fe(1) rank o y range 70-140 120-240 symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 7 v i c collector current 5 a p c collector power dissipation 1 w r ja thermal resistance from junction to ambient 125 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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