transient voltage suppressors for esd protection revision december 18, 2013 1 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. esdxxv88d-c un semiconductor co., ltd. www.unsemi.com.tw dfn-1006 the esdxxv88d-c is ultra low capacitance tvs arrays designed to protect high speed data interfaces. this series has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from over-voltage caused by esd (electrostatic discharge), cde (cable discharge events), and eft (electrical fast transients). u 100 watts peak pulse power per line (tp=8/20 s) u protects one birectional i/o line u low clamping voltage u working voltages :3.3v, 5v u low leakage current u iec61000-4-2 (esd) 15kv (air), 8kv (contact) u iec61000-4-4 (eft) 40a (5/50 s) u cell phone handsets and accessories u microprocessor based equipment u personal digital assistants (pda s) u notebooks, desktops, and servers u portable instrumentation u peripherals u pagers u dfn1006 (1.0x0.6x0.5mm) package u molding compound flammability rating : ul 94v-0 u weight 0.5 milligrams (approximate) u quantity per reel : 5,000pcs u reel size : 7 inch u lead finish : lead free symbol parameter value units p pp peak pulse power (tp=8/20 s waveform) 100 w i pp peak pulse current (tp=8/20 s waveform) 2.5 a t j operating junction temperature range -55 to +125 o c t stg storage temperature range -55 to +150 o c t l soldering temperature, t max = 10s 260 o c air discharge 15 iec61000-4-2 (esd) contact discharge 8 kv mechanical characteristics d escription feature functional diagram applications mechanical data 1 2
transient voltage suppressors for esd protection revision december 18, 2013 2 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. esdxxv88d-c un semiconductor co., ltd. www.unsemi.com.tw v c part number device marking v rwm (v) (max.) v b (v) (min.) i t (ma) v c @5 a (max.) (max.) (@a) i r ( a) (max.) c (pf) (typ.) esd3.3v88d-c t 3.3 3.5 1 5.5 15 7 1 6 ESD05V88D-C m 5 6 1 12.5 20 2 1 10 fig1. 8/20 s pulse waveform fig2. esd pulse waveform (according to iec 61000-4-2) fig3. power derating curve electrical characteristics ( @ 25 unless ot herwise specified ) characteristic curves 0 5 10 15 20 25 30 120 t r 100 80 60 40 20 0 peak value i pp t d =t i pp /2 t - time ( s ) i pp - peak pulse current - % of i pp 60ns 10% percent of peak pulse current % 30ns tr = 0.7~1ns time (ns) 90% 100% 0 20 40 60 80 100 120 140 160 180 200 100 40 30 20 10 0 % of rated power 90 80 60 50 ambient temperature C t a ( o c ) 70
transient voltage suppressors for esd protection revision december 18, 2013 3 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. esdxxv88d-c un semiconductor co., ltd. www.unsemi.com.tw fig4. esd clamping (+8kv contac per iec61000-4-2) fig5. esd clamping (-8kv contac per iec61000-4-2) millimeters inches symbol min. max. min. max. a 0.450 0.550 0.018 0.022 a1 0.010 0.070 0.000 0.003 d 0.950 1.050 0.037 0.041 e 0.550 0.650 0.022 0.026 d1 0.450 ref 0.018 ref e1 0.400 ref 0.016 ref b 0.275 0.325 0.011 0.013 e 0.675 0.725 0.027 0.029 l 0.275 0.325 0.011 0.013 l1 0.010 ref 0.000 ref symbol inches millimeters k 0.055 0.002 1.4 0.05 p 0.035 0.001 0.9 0.025 x 0.014 0.001 0.354 0.025 y 0.011 0.001 0.283 0.025 x1 0.020 0.001 0.5 0.025 y1 0.016 0.001 0.4 0.025 soldering footprint characteristic curves d fn 1006 package outline & dimensions
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