cystech electronics corp. spec. no. : c204a3 issued date : 2015.01.23 revised date : page no. : 1 / 7 bc547ba3 cystek product specification general purpose npn epitaxial planar transistor bc547ba3 description ? the bc547ba3 is designed for use in driver stage of af amplifier and low speed switching. ? complementary to bc557ba3. ? pb-free package symbol outline ordering information device package shipping bc547ba3-0-tb-g to-92 (pb-free lead plating and halogen-free package) 2000 pcs / tape & box BC547BA3-0-BK-G to-92 (pb-free lead plating and halogen-free package) 1000 pcs/ bag, 10 bags/box, 10boxes/carton to-92 bc547ba3 b base c collector e emitter c b e environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, tb :2000 pcs/tape & box; bk: 1000 pcs / bag, 10 bags/box, 10 boxes/carton product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c204a3 issued date : 2015.01.23 revised date : page no. : 2 / 7 bc547ba3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6 v collector current i c 200 ma base current i b 100 ma power dissipation @ta=25 pd 625 mw thermal resistance, junction to ambient r ja 200 c/w operating junction temperature range tj -55~+150 c storage temperature range tstg -55~+150 c characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 60 - - v i c =100 a bv ceo 50 - - v i c =1ma bv ebo 6 - - v i e =10 a i cbo - - 100 na v cb =60v i ebo - - 100 na v eb =5v *v ce(sat) 1 - 58 200 mv i c =10ma, i b =0.5ma *v ce(sat) 2 - 150 500 mv i c =100ma, i b =5ma *v be(sat) 1 - 720 900 mv i c =10ma, i b =0.5ma *v be(sat) 2 - 860 1.2 v i c =100ma, i b =5ma v be 1 0.58 0.65 0.7 v v ce =5v, i c =2ma v be 2 - 0.7 0.77 v v ce =5v, i c =10ma h fe 1 120 - - - v ce =5v, i c =10 a h fe 2 200 - 450 - v ce =5v, i c =2ma h fe 3 100 - - - v ce =5v, i c =100ma h fe 4 50 - - - v ce =6v, i c =150ma f t 100 - - mhz v ce =5v, i c =10ma, f=100mhz cob - 2.1 - pf v cb =10v, i e =0a, f=1mhz *pulse test: pulse width 380 s, duty cycle 2%
cystech electronics corp. spec. no. : c204a3 issued date : 2015.01.23 revised date : page no. : 3 / 7 bc547ba3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 200u a 300u a 400u a 500ua 1ma ib=100ua emitter grounded output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 1ma 1.5m a 2ma 2.5ma 5ma ib=500ua current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain---hfe ta=25c ta=75c ta=125c vce=1v current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain---hfe ta=25c ta=75c ta=125c vce=2v current gain vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) current gain---hfe ta=25c ta=75c ta=125c vce=10v saturation voltage vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) 125c 75c 25c vcesat=10ib
cystech electronics corp. spec. no. : c204a3 issued date : 2015.01.23 revised date : page no. : 4 / 7 bc547ba3 cystek product specification typical characteristics(cont.) saturation voltage vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) 125c 75c 25c vcesat=20ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=10ib ta=25c ta=75c 125c on voltage vs collector current 100 1000 10000 1 10 100 1000 collector current---ic(ma) on voltage---(mv) vbeon@vce=10v 125c 25c 75c capacitance vs reverse-biased voltage 1 10 100 0.1 1 10 100 reverse-biased voltage---vr(v) capacitance---(pf) cib cob transition frequency vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) transition frequency---ft(mhz) vce=5v power derating curve 0 100 200 300 400 500 600 700 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(mw)
cystech electronics corp. spec. no. : c204a3 issued date : 2015.01.23 revised date : page no. : 5 / 7 bc547ba3 cystek product specification to-92 taping outline millimeters dim item min. max. a component body height 4.33 4.83 d tape feed diameter 3.80 4.20 h2a h2a h2 h2 d2 a h w w1 h3 h4 h1 l1 l p2 p p1 f1 f2 d1 d t2 t t1 d1 lead diameter 0.36 0.53 d2 component body diameter 4.33 4.83 f1,f2 component lead pitch 2.40 2.90 f1,f2 f1-f2 - 0.3 h height of seating plane 15.50 16.50 h1 feed hole location 8.50 9.50 h2 front to rear deflection - 1 h2a deflection left or right - 1 h3 component height - 27 h4 feed hole to bottom of component - 21 l lead length after component removal - 11 l1 lead wire enclosure 2.50 - p feed hole pitch 12.50 12.90 p1 center of seating plane location 5.95 6.75 p2 4 feed hole pitch 50.30 51.30 t over all tape thickness - 0.55 t1 total taped package thickness - 1.42 t2 carrier tape thickness 0.36 0.68 w tape width 17.50 19.00 w1 adhesive tape width 5.00 7.00 - 20 pcs pitch 253 255
cystech electronics corp. spec. no. : c204a3 issued date : 2015.01.23 revised date : page no. : 6 / 7 bc547ba3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c204a3 issued date : 2015.01.23 revised date : page no. : 7 / 7 bc547ba3 cystek product specification to-92 dimension *: typical marking: 31 a d b c i 1 e f 2 3 g h 2 style: pin 1.collector 2.base 3.emitter 3-lead to-92 plastic package cystek packa g e code: a 3 bc547b date code i n c h e s m i l l i m e t e r s i n c h e s m i l l i m e t e r s dim m i n . m a x . m i n . m a x . dim m i n . m a x . m i n . m a x . a 0 . 1 7 0 4 0 . 1 9 0 2 4 . 3 3 4 . 8 3 g 0.0142 0 . 0 2 2 0 0 . 3 6 0 . 5 6 b 0 . 1 7 0 4 0 . 1 9 0 2 4 . 3 3 4 . 8 3 h - * 0 . 1 0 0 0 - * 2.54 c 0 . 5 0 0 0 - 1 2 . 7 0 - i - * 0 . 0 5 0 0 - * 1.27 d 0 . 0 1 4 2 0 . 0 2 2 0 0 . 3 6 0 . 5 6 1 - * 5 - * 5 e - * 0 . 0 5 0 0 - * 1.27 2 - * 2 - * 2 f 0 . 1 3 2 3 0 . 1 4 8 0 3 . 3 6 3 . 7 6 3 - * 2 - * 2 notes: 1.contr o lling dimension: millimeter s. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question w i th p a cking spec ification or p a cking method, please cont act y our local cy s t ek sales of fice. material: ? lead: pure tin plated. ? mold compound: epox y resin family , flammability solid burning class: ul94v -0. important notice: ? all rights are reserved. reproduction in w hole or in part is prohibited w i thout the prior w r itten approval of cy stek. ? cy stek reserves the right to make changes to its products w i thout notice. ? cy stek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cy stek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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