2SD999 transistor (npn) features power dissipation p cm: 0.5 w (tamb=25 ) collector current i cm: 1 a collector-base voltage v (br)cbo : 30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 100 a, i e =0 30 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 30 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5 v, i c =0 0.1 a h fe(1) v ce = 1 v, i c = 100 ma 90 400 dc current gain h fe(2) v ce = 1 v, i c = 1 a 50 collector-emitter saturation voltage v ce(sat) i c = 1 a, i b = 100 ma 0.4 v base-emitter saturation voltage v be (sat) i c = 1 a, i b = 100 ma 1.2 v base-emitter voltage v be v ce = 6 v, i c = 10 ma 0.6 0.7 v transition frequency f t v ce = 6 v, i c = 10 ma 130 mhz collector output capacitance c ob v cb = 6 v, i e =0, f= 1 mhz 22 pf classification of h fe(1) rank cm cl ck range 90-180 135-270 200-400 marking sot-89 1. base 2. collector 3. emitter 1 2 3 2SD999 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
br1005-br1010 2SD999 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. wej electronic co.,ltd
|
