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?2013 silicon storage technology, inc. ds70005025c 05/13 data sheet www.microchip.com features ? small package size ? 12-contact uqfn (2mm x 2mm x 0.6mm max thick- ness) ? wide operating voltage range ?v cc = 3.0?5.0v ? high linear output power, 802.11a/n/ac: ? spectrum mask compliant using 802.11a ofdm - up to 24 dbm at 5.0v - up to 22 dbm at 3.3v ? spectrum mask compliant using 802.11n mcs7, 40 mhz - up to 22 dbm at 5.0v - up to 19 dbm at 3.3v ? ~3% evm across 5.1-5.9 ghz for 54 mbps 802.11a - up to 20 dbm at 5.0v v cc - up to 18 dbm at 3.3v v cc ? 1.8% evm across 5.1-5.9 ghz for 351 mbps 802.11ac - up to 16 dbm at 3.3v v cc ? high power-added efficiency/low operating current for 54 mbps 802.11a applications ?~10% @ p out = 19 dbm for 54 mbps, 3.3v v cc ?gain: ? typically >26 db gain across broadband 4.9-5.9 ghz, 3.3v v cc ? low idle current ? ~140 ma i cq , 3.3 v v cc ? high speed power-up/-down ? turn on/off time (10%~90%) <100 ns ? low shut-down current (<1 a) ? on-chip power detector with -20 db linear dynamic range ? temperature stable ? vswr insensitive ?50 on-chip input match and simple output match ? packages available ? 12-pin qfn 2mm x 2mm x 0.55mm ? all lead-free devices are rohs compliant applications ? wlan (ieee 802.11a/n/ac) ?japan wlan ? hyperlan2 ? multimedia ?wimax 4.9-5.9 ghz high-linearity power amplifier SST11CP15E the SST11CP15E is a versatile power amplifier designed for 802.11a/n/ac embedded applications and is based on the highly-reliable ingap/gaas hbt technology. it is easily configured for high-linearity, high-efficiency applications over a wide temperature range while operating over the 4.9-5.9 ghz frequency band. the SST11CP15E has excellent linearity while meeting 802.11a spectrum mask at 23 dbm with a 3.3v power supply, and at 24.5 dbm with a 5.0v supply. it provides up to 18 dm, at 3% evm with 802.11a 54 mbps, and up to 16 dbm, at 1.8% evm with 802.11ac 351 mbps modulation and 3.3v bias. the power ampli- fier requires only a 4ma reference current for on/off control. it includes a vswr/ temperature insensitive, linear power detector. the SST11CP15E is offered in a 12-contact uqfn package.
?2013 silicon storage technology, inc. ds70005025c 05/13 2 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet product description the SST11CP15E is a high-linearity power amplifier designed for 802.11 a/n/ac embedded applica- tions. it has low power consumption and is based on the highly-reliable ingap/gaas hbt technology. the SST11CP15E offers a wide operating-voltage range from v cc 3.3v to 5.0v. it can be easily config- ured for high-linearity, high-efficiency applications while operating over the entire 802.11a frequency band for u.s., european, and japanese markets (4.9-5.9 ghz). the SST11CP15E has excellent linearity, typically ~3% evm at 19.5 dbm output power for 54 mbps 802.11a operation, at 5.0v, while meeting 802.11a spectrum mask at 24 dbm. the power amplifier also provides 16 dbm at 1.8% evm with 802.11ac, 351 mbps modulation. SST11CP15E includes a wide dynamic-range, linear power detector that is insensitive to temperature and voltage standing wave ratio (vswr). the power amplifier ic also features easy board-level operation along with high-speed power-up/down control. low reference current (typically 4 ma) makes the SST11CP15E controllable by an on/off switching signal directly from the baseband chip. these features coupled with low operating current make the SST11CP15E ideal for the final stage power amplification in battery-powered 802.11a/n/ac wlan transmitter applications. the SST11CP15E is offered in 12-contact uqfn pa ckage with 0.6 mm maximum thickness. see figure 2 for pin assignments and table 1 for pin descriptions.
?2013 silicon storage technology, inc. ds70005025c 05/13 3 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet functional blocks figure 1: functional block diagram 1 75025 b1.0 2 3 9 8 7 12 11 10 456 rfin vccb vref1 vref2 vref3 det nc rfout gnd vcc3 vcc2 vcc1 input match bias control power detection
?2013 silicon storage technology, inc. ds70005025c 05/13 4 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet pin assignments figure 2: pin assignments for 12-contact uqfn 1 75025 p1.0 2 3 9 8 7 12 11 10 456 rfin vccb vref1 vref2 vref3 det nc rfout gnd vcc3 vcc2 vcc1 top view (contacts facing down) rf and dc gnd 0
?2013 silicon storage technology, inc. ds70005025c 05/13 5 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet pin descriptions table 1: pin description symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground the center pad should be connected to rf ground with several low inductance, low resistance vias. rfin 1 i rf input, dc decoupled vccb 2 power supply pwr s upply voltage for bias circuit vref1 3 pwr current control vref2 4 pwr current control vref3 5 pwr current control det 6 o on-chip power detector nc 7 no connection unconnected pin rfout 8 o rf output gnd 9 ground ground (nc is acceptable) vcc3 10 power supply pwr power supply, 3 rd stage vcc2 11 power supply pwr power supply, 2 nd stage vcc1 12 power supply pwr power supply, 1 st stage t1.1 75025
?2013 silicon storage technology, inc. ds70005025c 05/13 6 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet electrical specifications the ac and dc specifications for the power amplifier interface signals. refer to table 3 for the dc voltage and current specifications. refer to figures 8 through 7 for 3.3v v cc rf performance and figures 8 through 11 for 5.0v v cc rf performance. absolute maximum stress ratings (applied conditions greater than those listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating con- ditions may affect device reliability.) supply voltage at pins 2, 10, 11, 12 (v cc ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +5.5v dc supply current (i cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 ma operating temperature (t a ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20oc to +85oc storage temperature (t stg ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +120oc maximum junction temperature (t j ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150oc maximum output power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 dbm surface mount solder reflow temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260c for 10 seconds table 2: operating range range ambient temp v cc industrial -20c to +85c 3.3v-5.0v t2.1 75025 table 3: dc electrical characteristics symbol parameter min. typ max. unit v cc supply voltage at pins 2, 10, 11, 12 3.0 3.3 5.0 v i cc supply current @ p out = 18 dbm v cc = 3.3v 220 ma v cc = 4.2v 250 ma v cc3 = 5.0v, v cc1,2 = 3.3v 290 ma i cq v cc quiescent current v cc = 3.3v 135 ma v cc = 4.2v 170 ma v cc3 = 5.0v, v cc1,2 = 3.3v 195 ma i off shut down current 1.0 10 a v reg recommended reference voltage v cc = 3.3v 2.85 v v cc3 = 5.0v, v cc1,2 = 3.3v 2.90 v t3.0 75025
?2013 silicon storage technology, inc. ds70005025c 05/13 7 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet table 4: ac electrical characteristics for configuration parameter condition min typ max unit f l-u frequency range 4.9 5.9 ghz linear power output power at 3% evm with 802.11a, 54 mbps ofdm signal v cc = 3.3v 17.5 dbm v cc3 = 5.0v, v cc1,2 = 3.3v 19.5 dbm output power at 3% evm with mcs7 40 mhz 11n signal v cc = 3.3v 17 dbm v cc3 = 5.0v, v cc1,2 = 3.3v 19 dbm output power at 1.8% evm, 11ac signal 351 mbps v cc = 3.3v 16 dbm acpr output power level with 802.11a mask compliance v cc = 3.3v 22 dbm v cc3 = 5.0v, v cc1,2 = 3.3v 24 dbm output power level with 802.11n mask compliance v cc = 3.3v 19 dbm v cc3 = 5.0v, v cc1,2 = 3.3v 22 dbm gain power gain from 4.9?5.9 ghz v cc = 3.3v 27 db v cc3 = 5.0v, v cc1,2 = 3.3v 23 db t4.1 75025
?2013 silicon storage technology, inc. ds70005025c 05/13 8 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet typical performance characteristics test conditions: v cc = 3.3v, t a = 25c, v reg = 2.85v unless otherwise noted evm measurement using sequenc e-only test configuration figure 3: evm versus output power, 802.11a v cc = 3.3v figure 4: evm versus output power, 802.11ac, 351 mbps modulation 75025 f3.0 0 1 2 3 4 5 6 7 8 9 10 5678 9 10111213141516171 8 19 20 21 evm (%) output power (dbm) evm versus output power 4920 mhz 5180 mhz 5500 mhz 5850 mhz 75025 f15.0 0 1 2 3 4 5 6 7 8 9 10 012345678 9 10111213141516171 8 19 20 21 22 evm (%) output power (dbm) evm versus output power fre q =5.005 ghz fre q =5.1 8 ghz fre q =5.5 ghz fre q =5. 8 5 ghz
?2013 silicon storage technology, inc. ds70005025c 05/13 9 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet test conditions: v cc = 3.3v, t a = 25c, v reg = 2.85v unless otherwise noted figure 5: power supply current versus output power, v cc = 3.3v figure 6: power gain versus output power, v cc = 3.3v 75025 f4.0 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 012345678 9 10111213141516171 8 19 20 21 supply current (ma) output power (dbm) supply current versus output power 4920 mhz 5180 mhz 5500 mhz 5850 mhz 75025 f5.0 20 21 22 23 24 25 26 27 2 8 29 30 31 5678 9 10111213141516171 8 19 20 21 power gain (db) output power (dbm) power gain versus output power 4920 mhz 518 0 mhz 5500 mhz 5 8 50 mhz
?2013 silicon storage technology, inc. ds70005025c 05/13 10 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet test conditions: v cc = 3.3v, t a = 25c, v reg = 2.85v unless otherwise noted figure 7: detector voltage vs output power, v cc = 3.3v 75025 f6.0 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 012345678 9 10111213141516171 8 19 20 21 detector voltage (v) output power (dbm) detector voltage versus output power 4920 mhz 5500 mhz 5500 mhz 5850 mhz
?2013 silicon storage technology, inc. ds70005025c 05/13 11 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet typical performance characteristics test conditions: v cc1,2 = 3.3v, v cc3 = 5.0v, t a = 25c, v reg = 2.90v unless oth- erwise noted figure 8: evm versus output power, v cc = 5.0v figure 9: dc current versus output power, v cc = 5.0v 75025 f8.0 0 1 2 3 4 5 6 7 8 9 10 5678 9 10111213141516171 8 19 20 21 22 23 evm (%) output power (dbm) evm versus output power 4920 mhz 5180 mhz 5500 mhz 5850 mhz 75025 f9.0 150 160 170 180 190 200 210 220 230 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 01234567 8 910111213141516171 8 19 20 21 22 23 supply current (ma) output power (dbm) supply current versus output power 4920 mhz 5180 mhz 5500 mhz 5850 mhz
?2013 silicon storage technology, inc. ds70005025c 05/13 12 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet test conditions: v cc1,2 = 3.3v, v cc3 = 5.0v, t a = 25c, v reg = 2.90v unless oth- erwise noted figure 10: gain versus output power, v cc = 5.0v figure 11: output power versus input power, v cc = 5.0v 75025 f10.0 15 16 17 1 8 19 20 21 22 23 24 25 26 27 2 8 5678 9 10111213141516171 8 19 20 21 22 23 power gain (db) output power (dbm) power gain versus output power 4920 mhz 5180 mhz 5500 mhz 5850 mhz 75025 f11.0 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0. 8 0 0.90 1.00 1.10 1.20 1.30 1.40 1.50 012345678 910111213141516171 8 19 20 21 22 23 detector voltage (v) output power (dbm) detector voltage versus output power 4920 mhz 5500 mhz 5500 mhz 5 8 50 mhz
?2013 silicon storage technology, inc. ds70005025c 05/13 13 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet figure 12: s-parameters 75025 s-parms.1.0 s12 versus frequency -80 -70 -60 -50 -40 -30 -20 -10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 frequency (ghz) s12 (db) s11 versus frequency -40 -35 -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 frequency (ghz) s11 (db) -40 -30 -20 -10 0 10 20 30 40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 -40 -35 -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 s22 versus frequency frequency (ghz) s22 (db) s21 versus frequency fr e que ncy (ghz ) s21 (db)
?2013 silicon storage technology, inc. ds70005025c 05/13 14 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet figure 13: typical application for high-linearity 802.11a/n/ac application 75025 f13.3 1 2 3 9 8 7 12 11 10 456 50 rfin 50 capacitor placement is measured from edge of pa to edge of capacitor. 0 105 det vreg 300 test conditions v cc =vccb=3.3v , v reg = 2.85v v cc =vccb=5.0v , v reg = 2.90v 50 146 mil 12 mil 20 mil 0.9 mm 68 0.5 pf 2.4 pf rfout vcc3 4.7 f 0.1 f 0.1 f 200 pf 11cp15e 2x2 12l uqf n top vie w vccb 0.1 f 0.3 pf vcc1,2 note: the SST11CP15E has on-chip dc- blocking caps on all rf ports the resistor on vccb will im prove dynamic evm performance
?2013 silicon storage technology, inc. ds70005025c 05/13 15 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet product ordering information valid combinations for SST11CP15E SST11CP15E-qube SST11CP15E ev aluation kits SST11CP15E-qube-k note: valid combinations are those products in mass producti on or will be in mass production. consult your sst sales representative to confirm availability of valid co mbinations and to determine availability of new combi- nations. sst 11 cp 15e - qube xx xx xxx - xxxx environmental attribute e 1 = non-pb contact (lead) finish package modifier b = 12 contact package type qu = uqfn product family identifier product type p = power amplifier voltag e c = 3.0-5.0v frequency of operation 1 = 4.9-5.9 ghz product line 1 = rf products 1. environmental suffix ?e? denotes non-pb sol- der. sst non-pb solder devices are ?rohs compliant?.
?2013 silicon storage technology, inc. ds70005025c 05/13 16 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet packaging diagrams figure 14: 12-contact ultra-thin quad flat no-lead (uqfn) sst package code: qub 12-uq fn-2x2-qub-2.0 0.4 bsc see notes 2 and 3 pin #1 0.25 0.15 0.92 0.34 0.24 top view bottom view side view 1mm 0.265 0.165 pin #1 (laser engra v ed see note 2) 2.00 0.05 2.00 0.05 0.075 n ote: 1. similar to jedec jep95 uqf n /uson v ariants, tho u gh n u m b er of contacts and some dimensions are different. 2. the topside pin #1 indicator is laser engra v ed; its approximate shape and location is as sho w n. 3. from the bottom vie w , the pin #1 indicator may be either a cur v ed indent or a 45-degree chamfer. 4. the external paddle is electrically connected to the die b ack-side and to v ss . this paddle must be soldered to the pc b oard; it is required to connect this paddle to the v ss of the unit. connection of this paddle to any other v oltage potential will resu lt in shorts and electrical malfunction of the de v ice. 5. untoleranced dimensions are nominal target dimensions. 6. all linear dimensions are in millimeters (max/min). 0.60 0.50 0.05 max
?2013 silicon storage technology, inc. ds70005025c 05/13 17 4.9-5.9 ghz high-linearity power amplifier SST11CP15E data sheet table 5: revision history revision description date a ? initial release of data sheet sep 2011 b ? added figure 4 on page 8 ? removed v reg values from all figure captions ? revised features ? updated table 3 and table 4 on page 7 ? revised figure 13 on page 14 oct 2012 c ? updated ?features? on page 1 ? updated figure 13 may 2013 ? 2013 silicon storage technology, inc?a microchi p technology company. all rights reserved. sst, silicon storage technology, the sst l ogo, superflash, mtp, and flashflex are regi stered trademarks of silicon storage tech - nology, inc. mpf, sqi, serial quad i/o, and z-scale are trad emarks of silicon storage technology, inc. all other trademarks and registered trademarks mentioned herein are the property of their respective owners. specifications are subject to change without notice. refer to www.microchip.com for th e most recent documentation. for the most current package drawings, please see the packaging specific ation located at http://www.microchip.com/packaging. memory sizes denote raw storage capacity ; actual usable capacity may be less. sst makes no warranty for the use of its products other than those ex pressly contained in the standar d terms and conditions of sale. for sales office locations and information, please see www.microchip.com. silicon storage technology, inc. a microchip technology company www.microchip.com isbn:978-1-62077-211-9

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