^e.ml-don.du.cio'i lpioducti, line. 20 stern ave. springfield, new jersey 07081 u.s.a. IRF420, irf421, irf422, irf423 telephone; (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 2.2a and 2.5a, 450v and 500v, 3.0 and 4.0 ohm, n-channel power mosfets features description ? 2.2a and 2.5a, 450v and 500v ? rds(on) = 3-ofi and 4.0q ? soa is power dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ? majority carrier device ? related literature these are n-channel enhancement mode silicon gate power field effect transistors. they are advanced power mosfets designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. all of these power mosfets are designed for applications such as switching regulators, switching conver- ters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated circuits. ordering information note: when ordering, use the entire part number. symbol part number IRF420 irf421 irf422 irf423 package to-204aa to-204aa to-204aa to-204aa brand IRF420 irf421 irf422 irf423 9 d packaging jedec to-204aa drain (flange) gate (pin 1) source (pin 2) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRF420, irf421, irf422, irf423 absolute maximum ratings tc = 25c drain to source breakdown voltage (note 1) drain to gate voltage (res = 20k2) (note 1 ) .... continuous drain current. . . tr = 1 00c pulsed drain current (note 3) . . gate to source voltage .... maximum power dissipation linear derating factor single pulse avalanche energy rating (note 4) . . operating and storage temperature maximum temperature for soldering leads at 0 063in (1 6mm) from case for 10s ... packaae bodv for 10s, see tb334 unless other ? .vnq ? ? ? vdgr ln in . . -vfic . . .pn eas ?tj, tstg tl . . . . tntn wise specified IRF420 500 500 2.5 1.6 10 20 50 0.4 210 -55 to 150 300 260 irf421 450 450 2.5 1.6 10 20 50 0.4 210 -55 to 150 300 260 irf422 500 500 2.2 1.4 8 20 50 0.4 210 -5510150 300 260 irf423 450 450 2.2 1.4 8 20 50 0.4 210 -55 to 150 300 260 units v v a a a v w w/c mj c c c caution: stresses above those listed in "absolute maximum ratings" may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: = 25cto125c. electrical specifications tc = 25c, unless otherwise specified parameter drain to source breakdown voltage IRF420, irf422 irf421.irf423 gate threshold voltage zero gate voltage drain current on-state drain current (note 2) IRF420, irf421 irf422, irf423 gate to source leakage current drain to source on resistance (note 2) IRF420, irf421 irf422, irf423 forward transconductance (note 2) turn-on delay time rise time turn-off delay time fall time total gate charge (gate to source + gate to drain) gate to source charge gate to drain "miller" charge symbol bvdss vgs(th) !dss 'd(on) !gss rds(on) 9fs 'd(on) tr 'd(off) tf qg(tot) qgs qgd test conditions id = 250ua, vgs = ov, (figure 10) vgs = vds,ld = 250na vds = rated bvdss, vgs = ov vds = 0.8 x rated bvdss, vgs = ov, tj = 125c vds =" to(on) x rds(on)max> vgs = 1ov (figure 7) vgs = 2v id = 1-4a, vgs = 10v, (figures 8, 9) vds * 10v, id = 2-oa. (figure 12) vdd = 250v, id = 2.5a, rg = 18q, r|_ = 96j. times are essentially independent of operating temperature vgs = 10v, id <= 2.5a, vds = 0-8 x rated bvdss, ig(ref) = 1.5ma, (figures 14, 19, 20) operating temperature min 500 450 2.0 - - 2.5 2.2 - _ 1.5 - - - - - - - typ _ - - - - _ - 2.5 3.0 2.3 10 12 28 12 11 5 6 max _ - 4.0 25 250 , - 100 3.0 4.0 - 15 18 42 18 19 - - units v v v ua ua a a na q q s ns ns ns ns nc nc nc
IRF420, irf421, irf422, irf423 electrical specifications tc = 25c, unless otherwise specified (continued) parameter input capacitance output capacitance reverse transfer capacitance internal drain inductance internal source inductance thermal resistance junction to case thermal resistance junction to ambient symbol clss cqss crss ld ls rejc reja test conditions vds = 25v, vgs = ov, f = 1mhz, (figure 1 1 ) measured between the contact screw on the flange that is closer to source and gate pins and the center of die. measured from the source lead, 6mm (0.25in) from the flange and source bonding pad. modified mosfet symbol showing the internal devices inductances. ^ free air operation min - - - - - typ 300 75 20 5.0 12.5 - - max - - - 2.5 30 units pf pf pf nh nh c/w c/w source to drain diode specifications parameter continuous source to drain current pulse source to drain current (note 3) source to drain diode voltage (note 2) reverse recovery time reverse recovered charge symbol !sd 'sdm vsd trr qrr test conditions modified mosfet symbol showing the integral reverse p-n junction diode .jje 1 d ^ s tj = 25c, isd = 2.5a, vgs = ov, (figure 13) tj = 25c, isd = 2.5a, dlso/dt = 100a/us tj = 25c, isd = 2.5a, dlso/dt = 100a/us min - - 130 0.57 typ - - 270 1.2 max 2.5 10 1.4 540 2.3 units a a v ns uc notes: 2. pulse test: pulse width < 300ns, duty cycle < 2%. 3. repetitive rating: pulse width limited by max junction temperature. see transient thermal impedance curve (figure 3). 4. vdd = 50v, starting tj = 25c, l = 60mh, rg = 25n, peak ias = 2.5a, figures 15, 16.
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