smd type ic www.kexin.com.cn 1 smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1. gate 2. drain 3. source features r ds(on) = 45m (typ.), v gs = 10v, i d =9a q g(tot) = 26nc (typ.), v gs = 10v low miller charge low q rr body diode uis capability (single pulse and repetitive pulse) qualified to aec q101 absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 150 v gate to source voltage v gs 20 v drain current continuous (t c =25 ,v gs = 10v) 29 a drain current continuous (t c = 100 ,v gs = 10v) 20 a drain current continuous(t c =100 ,v gs =10v,r ja =52 /w)) 4a single pulse avalanche energy * e as 36 mj power dissipation p d 135 w derate above 25 p d 0.9 w/ operating and storage temperature t j ,t stg -55to175 thermal resistance junction to case r jc 1.11 /w thermal resistance junction to ambient to252 r ja 100 /w thermal resistance junction to ambient to252 ,1in 2 copper pad area r ja 52 /w *startingt j =25 ,l=0.2mh,i as = 19a. i d n-channel powertrench mosfet KDD2572
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage b vdss i d = 250 a, v gs =0v 150 v v ds = 120v,v gs =0v 1 v ds = 120v,v gs =0v,t c = 150 250 gate to source leakage current i gss v gs = 20v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 24v i d =9a,v gs = 10v 0.045 0.054 i d =4a,v gs = 6v, 0.05 0.075 i d =9a,v gs = 10v,t c = 175 0.126 0.146 input capacitance c iss 1770 pf output capacitance c oss 183 pf reverse transfer capacitance c rss 40 pf total gate charge at 10v q g(tot) v gs =0v to 10v,v dd =75v,i d =9a,i g =1.0ma 26 34 nc threshold gate charge q g(th) v gs =0v to 2v,v dd =75v,i d =9a,i g =1.0ma 3.3 4.3 nc gate to source gate charge q gs 8nc gate charge threshold to plateau q gs2 5nc gate to drain "miller" charge q gd 6nc turn-on time t on 36 ns turn-on delay time t d(on) 11 ns rise time t r 14 ns turn-off delay time t d(off) 31 ns fall time t f 14 ns turn-off time t off 66 ns i sd =9a 1.25 v i sd =4a 1.0 v reverse recovery time t rr i sd =9a,d isd /d t = 100a/ s 74 ns reverse recovery charge q rr i sd =9a,d isd /d t = 100a/ s 169 nc i dss zero gate voltage drain current a source to drain diode voltage v sd v ds = 25v, v gs =0v,f=1mhz drain to source on-resistance r ds(on) v dd = 75v,i d =9a,i g =1.0ma v dd = 75v, i d = 33a,v gs = 10v, r gs =11 KDD2572
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