j 20 stern ave. springfield, new jersey 07081 u.s.a. high power silicon controlled rectifier 1300 volts 235 a rms telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 i C180 i amplifying gate C180 silicon controlled rectifier is designed for phase control applications. this is an all-diffused pic-pac device, employing the field-proven amplifying gate. features: ? high di/dt ratings ? high dv/dt capability with selections available ? excellent surge and i2t ratings providing easy fusing ? rugged hermetic package with long creepage path maximum allowable ratings type C180a C180b C180c C180d C180e C180m C180s C180n C180t C180p C180pa C180pb C180pc repetitive peak off-state voltage, vdrm' tj - -40c to -h25c 100 volts 200 300 400 500 600 700 800 900 1000 1100 1200 1300 repetitive peak reverse voltage, vrrmi tj = -40c to +125c 100 volts 200 300 400 500 600 700 800 900 1000 1100 1200 1300 non-repetitive peak reverse voltage, vrsm1 tj = +125c 200 volts 300 400 500 600 720 840 950 1075 1200 1325 1450 1550 1 half sinewave waveform, 10 msec. max. pulse width. rms on-state current, it(rms) 235 amperes (all conduction angles) average on-state current, it(av) ? ? ? depends on conduction angle (see charts) peak one-cycle surge (non-repetitive) on-state current, itsm (60 hz) 3500 amperes peak one-cycle surge (non-repetitive) on-state current, itsm (50 hz) 3200 amperes critical rate-of-rise of on-state current (non-repetitive)* 800 a/jus critical rate-of-rise of on-state current (repetitive)* 500 a/ms i2t (for fusing), for times > 1.5 milliseconds 32,000 (rms ampere)2 seconds peak gate power dissipation, pgm 10 watts average gate power dissipation, pg(av) 2 watts storage temperature, tstg -40c to +150c operating temperature, tj -40c to +125c stud torque 250 lb.-in. (min.) - 300 lb.-in, (max.) ' 28 n-m (min.) - 34 n-m (max.) quality semi-conductors
characteristics test repetitive peak reverse and off-state current C180a C180b C180c C180d C180e C180m C180s C180n C180t C180p C180pa C180pb C180pc repetitive peak reverse and off-state current C180a C180b C180c C180d C180e C180m C180s C180n C180t C180p C180pa C180pb C180pc thermal resistance critical rate-of-rise of off-state voltage. (higher values may cause device switching.) symbol jdrm and jrrm !drm and !rrm r0jc dv/dt win. - - - - - - - - ? - - - ? - - - - - - - - - - - ? - - 200 typ. 3 3 3 3 3 3 3 3 3 3 3 3 3 15 15 15 15 15 15 15 15 15 12 11 10 8 .12 500 max. 10 10 10 10 10 10 10 10 9 7 7 6 5 20 20 20 20 20 20 20 20 18 15 14 13 11 .14 units rna ma c/watt v//isec | C180 test conditions tj = +25c vdrm = vrrm = 100 volts peak 200 300 400 500 600 700 800 900 1000 1100 1200 1300 tj = -h25cc vdrm = vrrm = 100 volts peak 200 300 400 500 600 700 800 900 1000 1100 1200 1300 junction-to-case tj = +125c, vdrm = rated using linear or exponential rising waveform, gate open circuited. exponential dv/dt = (.632) higher minimum dv/dt selections available - consult factory. holding current turn-on delay time gate pulse width necessary to trigger dc gate trigger current dc gate trigger voltage peak on-state voltage ih td jgt vgt vtm ? ~" " - - - ? 0.15 ? 75 1 8 100 - - 1.25 - 2.3 500 " 10 150 200 125 3.0 - 2.85 madc fj.se c /isec madc vdc volts tc = +25c, anode supply = 24 vdc. initial on-state current - 2.5 amps. tc = +25c, it = looadc, vdrm = rated gate supply: 10 volt open circuit, 25 ohm, 0.1 /usec max. rise time. tc = 25c, gate supply: 20 volt open cir- cuit, 40 ohm, .5 ftsec rise time. it = 1 amp. for high di/dt capability, see chart 7. tc = +25c, vd = 6 vdc, rl = 3 ohms tc = -40c, vd - 6 vdc, rl = 3 ohms tc = -h25c, vd * 6 vdc, rl = 3 ohms tc = -40c to +125c, vd = 6 vdc, rl = 3 ohms tc = -h25c, vd = rated, rl = 1000 ohms tc = +25 c, itm * 1500 amps. peak duty cycle < 0.01%
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