, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 powermos transistor BUZ84 general description n-channel enhancement mode field-effect power transistor in a metal envelope. this device is intended for use in switched mode power supplies (smps), motor control, welding, dc/dc and dc/ac converters, and in general purpose switching applications. quick reference data symbol vds id ptot rds(on) parameter drain-source voltage drain current (d.c.) total p?wer dissipation drain-source on-state resistance max. 800 5,3 125 2,0 untt v a w n mechanical data dimensions in mm net mass: 12 g pinning: l=gate 2 ? drain 3 = source 38,84 30,1 19,5 ?10,9-.- 1,6 ? fig.l to3; drain connected to mounting base. h.55 | max notes 1. observe the general handling precautions for electrostatic-discharge sensitive devices (esds) to prevent damage to mos gate oxide. 2. accessories supplied on request: refer to mounting instructions for to3 envelopes. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
ratings limiting values in accordance with the absolute maximum system (iec 134) symbol vds vdgr vgs id id idm plot tstg tj parameter dtain-source voltage drain-gate voltage gate-source voltage drain current (d.c.) drain current (d.c.) drain current (pulse peak value) total power dissipation storage temperature junction temperature conditions - rgs = 20 kn - tmb- 25 ?c tmb=100c tmb. 25 "c tmb- 25 "c - ? min. - - - - - - - -55' ? max. 800 800 20 5,3 3,4 21 125 150 150 unit v v.. v a a a w c ?c thermal resistances from junction to mounting base from junction to ambient rthj-mb = rthj-a = 1,0 k/w 35 k/w static characteristics tmd = 25 c unless otherwise specified symbol v(br)dss vgscto) idss idss igss rds(on) parameter drain-source breakdown voltage gate threshold voltage zero gate voltage drain current zero gate voltage drain current gate source leakage current drain-source on-state resistance conditions vgs = 0 v; id = 0,25 ma vds vgs; id = 1 ma vds = 800 v; vgs " 0 v; tj = 25 c vds * 800v; vgs = ov;tj - 125 c vgs-*20v;vd$ = ov vgs=10v;id = 3a min. 800 2,1 typ. 3,0 20 0,1 10 1,6 max. 4,0 250 1,0 100 2,0 unit v v ma ma na n dynamic characteristics tmb = 25 c unless otherwise specified symbol gfs ciss coss crss 'don tr tdoff tf ld ls parameter forward transconductance input capacitance output capacitance feedback capacitance turn-on delay time turn-on rise time turn-off delay time turn-off fall time internal drain inductance internal source inductance conditions vds = 25 v; id = 3 a vgs" 0v; vds * 25 v;f = 1 mhz vdd = 30v;id = 2,sa; vgs = 10 v; rgs ? so n; rgen ? 50 ? measured from contact screw on header closer to source pin and centre of die measured from source lead 6 mm from package to source bond pad min. 1,8 - - - typ. 3,0 3900 200 80 60 90 330 110 5,0 12,5 max - 5000 350 140 90 140 430 l40 - unit s pf pf pf ns ns ns na nh nh
reverse diode .ratings and characteristics tmb ~ 25 c unless otherwise specified symbol !dr rdrm vsd trr qic parameter continuous reverse drain current pulsed reverse drain current diode forward on-voltage reverse recovery time reverse recovery charge conditions tmb = 25''c tmb = 25c if =10,6 a; vgs = ov; tj = 25c lf = 5,3a;tj = 25c -dlp/dt = 100 a/jis; tj-25"c; vgs = 0 v; vr = 100 v min. - - typ. 1,0 1800 25 max. 5,3 21 1,45 - unit a a v ns pc 140 w po12 i 100 80 60 40 20 0 fit ?? i -> \ s s s \ \ s s s ) 50 100 c 150 ? -tc '.2 power dissipation pd = f(tmb), 10' 5 i 10' 5 10 5 1 fig. 4 -0= t /? . 1 ^ [ffi h"h4 ? a lus s \ iops x ? ; 10ms '+'.'. t 4 7- illl / ii * so/ > :^t i y s v '' ^ ^ ? a ^ \ '' v ' sjk dc 0 5 10' s 102 5v103 safe operating area irj(dc) and idm** f(vos) parameter: tp,- d = 0,01; tmb = 25 "c. ffe.5 typical output characteristics ifi m f(vos) parameter: vgs; $? *** pulse test; v 10 fig.s typical transfer characteristic id af(vgs) conditions: 80 us pulse test; vrjs=25 v,
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