?silikron semiconductor co. , ltd. 1 http://www.s ilikron.com v1. 1 ssf 66 46 package marking and ordering information device marking device device package reel size tape width quantity ssf 66 46 ssf 66 46 sop - 8 ?330mm 12mm 3000 units absolute maximum rat i ngs(ta=25 unless otherwise noted) parameter symbol limit unit drain - source voltage v ds 60 v gate - source voltage v g s 2 0 v drain current - continuous@ current - pulsed (note 1) i d ( 25 ) 5 a i d ( 70 ) 4.3 a i dm 2 5 a maximum power dissipation p d 2. 4 w operating junction and storage temperature range t j ,t stg - 55 to 1 75 thermal characteristics thermal resistance,junction - to - ambient (note 2) r ja 62.5 /w electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteri stics drain - source breakdown voltage bv dss v gs =0v i d =250a 60 v general features v ds = 60 v,i d = 4 .5 a r ds(on) < 7 5 m @ v gs = 4.5 v r ds(on) < 60 m @ v gs =10 v high power and current handing capability lead free product is acquired surface mount package description the ssf 66 46 uses advanced trench technology to provide excellent r ds(on) and low gate charge . application pwm applications load switch power management schematic diagram marking and pin assignment s op - 8 top view
?silikron semiconductor co. , ltd. 2 http://www.s ilikron.com v1. 1 ssf 66 46 zero gate voltage drain current i dss v ds = 48 v,v gs =0v 1 a gss v gs = 2 0 v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250a ds(on) v gs = 4 .5v, i d = 3 a 5 0 7 5 m gs = 10 v, i d = 4.5 a 44 60 m fs v ds = 5 v,i d = 4.5 a 5 s dynamic characteristics (note4) input capacitance c lss v ds = 25 v,v gs =0v, f= 1.0mhz 7 00 pf output capacitance c oss 10 0 pf reverse transfer capacitance c rss 5 0 pf switching characteristics (note 4) turn - on delay time t d(on) v d s = 30 v, v gs = 10 v,r gen = 3 d = 4.5 a 13 ns turn - on rise time t r 10 ns turn - off delay time t d(off) 30 ns turn - off fall time t f 6 ns total gate charge q g v ds = 48 v,i d = 4.5 a,v gs = 10 v 15 nc gate - source charge q gs 2 nc gate - drain charge q gd 4 nc drain - source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s = 1.7 a 0 .8 1 . 2 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on 1in 2 fr4 boar d, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
?silikron semiconductor co. , ltd. 3 http://www.s ilikron.com v1. 1 ssf 66 46 typical electrical and thermal characteristics figure 1: switching test circuit figure 2:switching waveforms r(t), normalized effective transient thermal impedance figure 3 normalized maximum transient thermal impedance square wave pluse duration(sec) v g s r g e n v in g v d d rl v o u t s d v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off ) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off ) t f 90%
?silikron semiconductor co. , ltd. 4 http://www.s ilikron.com v1. 1 ssf 66 46 so p - 8 package information notes 1 . dimensions are inclusive of plating 2 . package body sizes exclude mold flash and gate burrs. mold flash at the non - lead sides should be less than 6 mils. 3 . dimension l is measured in gauge plane. 4 . controlli ng dimension is millimeter, converted inch dimensions are not necessarily exact.
?silikron semiconductor co. , ltd. 5 http://www.s ilikron.com v1. 1 ssf 66 46 attention: any and all silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reli ability, such as life - support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your silikron representative nearest you befo re using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the indep endent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, th e customer should always evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures incl ude but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(including technical data, services) described or contained herein are c ontrolled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be repr oduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permissio n of silikron semiconductor co.,ltd. info rmation (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding it s use or a ny infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equip ment, refer to the "delivery specification" for the silikron product that you intend to use. this catalog provides information as of dec , 200 8 . specifications and information herein are subject to change without notice.
|
