lifetime buy last order 31jul04 last ship 31jan05 MRF181SR1 mrf181zr1 5.2152 motorola wireless rf, if and transmitter device data the rf mosfet line
nchannel enhancementmode lateral mosfets designed for broadband commercial and industrial applications at frequen- cies to 1.0 ghz. the high gain and broadband performance of these devices make them ideal for largesignal, common source amplifier applications in 12.5 and 28 volt mobile, portable and base station equipment. ? guaranteed performance @ 945 mhz, 28 volts output power = 7.5 watts power gain = 15.5 db efficiency = 30% ? capable of handling 5:1 vswr @ 28 vdc, 945 mhz, 7.5 watts cw output power ? excellent thermal stability ? characterized with series equivalent largesignal impedance parameters ? sparameter characterization at high bias levels ? suitable for 12.5 volt application ? available in tape and reel. r1 suffix = 500 units per 12 mm, 7 inch reel. maximum ratings rating symbol value unit drainsource voltage v dss 65 vdc gatesource voltage v gs 20 vdc drain current e continuous i d 2.0 adc total device dissipation @ t c = 70 c derate above 70 c p d 36 0.278 watts w/ c storage temperature range t stg 65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 5.42 c/w note caution mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed.
semiconductor technical data 1.0 ghz, 7.5 w, 28 v lateral nchannel broadband rf power mosfets case 458b02, style 1 (MRF181SR1) case 458c02, style 1 (mrf181zr1) g d s rev 1
lifetime buy last order 31jul04 last ship 31jan05 5.2153 MRF181SR1 mrf181zr1 motorola wireless rf, if and transmitter device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drainsource breakdown voltage (v gs = 0, i d = 50 m adc) v (br)dss 65 e e vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0) i dss1 e e 1.0 m adc zero gate voltage drain current (v ds = 65 vdc, v gs = 0) i dss2 e e 1.0 m adc gatesource leakage current (v gs = 20 vdc, v ds = 0) i gss e e 1.0 m adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 55 m adc) v gs(th) 2.0 3.6 4.0 vdc drainsource onvoltage (v gs = 10 vdc, i d = 0.5 adc) v ds(on) 0.3 0.66 0.8 vdc gate quiescent voltage (v ds = 28 vdc, i d = 170 madc) v gs(q) 3.5 e 5.5 vdc dynamic characteristics input capacitance (v ds = 28 vdc, v gs = 0, f = 1.0 mhz) c iss e 13 e pf output capacitance (v ds = 28 vdc, v gs = 0, f = 1.0 mhz) c oss e 6.6 e pf reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1.0 mhz) c rss e 0.69 e pf functional tests (in motorola test circuit. see figure 1.) commonsource power gain (v dd = 28 vdc, p out = 7.5 w pep, i dq = 170 ma, f1 = 945 mhz, f2 = 945.1 mhz, min 15.5 db) g ps 15.5 17 e db drain efficiency (v dd = 28 vdc, p out = 7.5 w pep, i dq = 170 ma, f1 = 945 mhz, f2 = 945.1 mhz) h 30 32.5 e % input return loss (v dd = 28 vdc, p out = 7.5 w pep, i dq = 170 ma, f1 = 945 mhz, f2 = 945.1 mhz) irl e 12.7 9 db intermodulation distortion (v dd = 28 vdc, p out = 7.5 w pep, i dq = 170 ma, f1 = 945 mhz, f2 = 945.1 mhz) imd e 30 28.5 dbc output mismatch stress (v dd = 28 vdc, p out = 7.5 w cw, i dq = 170 ma, f1 = 945 mhz, load vswr = 5:1, all phase angles) y no degradation in output power
lifetime buy last order 31jul04 last ship 31jan05 MRF181SR1 mrf181zr1 5.2154 motorola wireless rf, if and transmitter device data r1 r2 r3 c6 c7 c8 c9 c11 b1 r4 dut c13 tl1 tl2 tl3 c5 c1 c2 c10 tl5 c4 + v gg tl4 + c12 c14 v dd c10 30 pf chip capacitor, atc 100b390cca500x c11 250 m f, 50 vdc electrolytic capacitor, mallory tc50025 n1, n2 type n connector r1 1.2 k w , 1/4 w resistor r2 47 k w , 1/4 w resistor r3 10 k w , 1/4 w chip resistor r4 4.0 x 39 w , 1/8 w chip resistor tl1-tl5 microstrip line ckt board 1/32 glass teflon ? , e r = 2.55, arlongx03005522 figure 1. mrf181 test circuit schematic b1 short rf bead, fair rite-2743019447 c1 18 pf chip capacitor, atc 100b180cca500x c2, c3 0.88.0 pf variable capacitor, johansen gigatrim c4 0.42.5 pf variable capacitor, johansen gigatrim c5 100 pf chip capacitor, atc 100a101cca150x c6, c12 10 m f, 50 vdc electrolytic capacitor, panosonic ecev1hv100r c7 43 pf chip capacitor, atc 100b430cca500x c8, c13 1000 pf chip capacitor, atc 100b102cca500x c9, c14 0.1 m f 50 vdc ceramic, kemet cdr33bx104akws rf input rf output c3 +
lifetime buy last order 31jul04 last ship 31jan05 5.2155 MRF181SR1 mrf181zr1 motorola wireless rf, if and transmitter device data p out , output power (watts) p out , output power (watts) imd, intermodulation distortion (dbc) p out , output power (watts) pep 15 30 45 55 0.1 1 10 100 20 0234 6 p out , output power (watts) pep imd, intermodulation distortion (dbc) typical characteristics figure 2. intermodulation distortion products versus output power figure 3. intermodulation distortion versus output power 30 40 50 60 80 5th 7th v dd = 28 vdc f1 = 945 mhz f2 = 945.1 mhz i dq = 75 ma 22 18 14 12 0.1 1 10 100 g ps , power gain (db) figure 4. power gain versus output power 16 10 4 0 0 0.2 0.4 0.6 p in , input power (watts) p out , output power (watts) figure 5. output power versus input power v ds = 28 vdc i dq = 75 ma f = 945 mhz 12 12 16 20 32 v dd , supply voltage (volts) p out , output power (watts) figure 6. output power versus supply voltage 8 4 0 6 0 0.5 1 5 v gs , gatesource voltage (volts) figure 7. output power versus gate voltage 4 2 0 1 2 3.5 g ps p out typical device shown 3rd order 70 15 v dd = 28 vdc f1 = 945 mhz f2 = 945.1 mhz 20 40 35 25 50 150 ma 75 ma v dd = 28 vdc f = 945 mhz 25 ma 20 16 g ps , power gain (db) 14 8 2 6 12 0.1 0.3 0.5 18 15 17 14 16 i dq = 75 ma f = 945 mhz 50 mw 100 mw p in = 200 mw v ds = 28 vdc p in = 75 mw f = 945 mhz 14 18 28 24 30 22 26 10 6 2 5 3 2.5 3 4 4.5 1.5 i dq = 250 ma i dq = 25 ma 150 ma 75 ma 250 ma
lifetime buy last order 31jul04 last ship 31jan05 MRF181SR1 mrf181zr1 5.2156 motorola wireless rf, if and transmitter device data i d , drain current (ma) g ps , power gain (db) 1200 800 400 0 0135 7 v gs , gate voltage (volts) 8 800 840 880 920 960 f, frequency (mhz) p out , output power (watts) typical characteristics figure 8. output power versus frequency figure 9. drain current versus gate voltage 7 5 3 1 0 v ds = 28 vdc 20 15 10 0 0102030 50 v ds , drainsource voltage (volts) c, capacitance (pf) figure 10. capacitance versus voltage v gs = 0 vdc f = 1.0 mhz 2 1.2 0.4 0 0 10203035 v ds , drain voltage (vdc) , drain current (amps) figure 11. dc safe operating area t j = 150 c t f = 70 c 2 01020 35 v ds , drain voltage (vdc) figure 12. dc safe operating area 1.4 0.8 0 18 880 900 920 980 f, frequency (mhz) figure 13. performance in broadband circuit 17 16 14 15 940 960 typical device shown 10 mw 50 mw p in = 100 mw v dd = 28 vdc i dq = 75 ma single tone 820 860 900 940 6 4 2 246 1000 600 200 5 51525 4045 35 c iss c oss c rss 51525 1.8 1 0.2 1.6 0.8 1.4 0.6 t j = 175 c t f = 70 c 5152530 1.6 1.0 0.4 1.8 1.2 0.6 0.2 v dd = 28 vdc i dq = 75 ma p out = 4.0 w (cw) vswr g ps input vswr 17.5 16.5 15.5 14.5 50 45 40 30 h 35 h , efficiency (%) 1.0 1.5 2.0 2.5 i d , drain current (amps) i d
lifetime buy last order 31jul04 last ship 31jan05 5.2157 MRF181SR1 mrf181zr1 motorola wireless rf, if and transmitter device data 60 30 0 40 0102030 p in , input power (dbm) p out , output power (dbm) typical characteristics figure 14. class a third order intercept point fundamental 3rd order figure 15. component parts layout v ds = 26 vdc i d = 500 ma f1 = 945 mhz f2 = 945.1 mhz 51525 10 30 50 20 40 10 20 v gate v drain mrf181 c1 c5 c7 c8 c9 c12 c11 b1 c13 c14 r1 r3 r4 tl1 tl2 tl3 tl4 tl5 c4 c2 c3 r2 c6 c10
lifetime buy last order 31jul04 last ship 31jan05 MRF181SR1 mrf181zr1 5.2158 motorola wireless rf, if and transmitter device data 800 850 900 950 1000 mhz z in z out 1000 mhz 0.1 0.2 0.3 0.4 0.5 0 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 850 800 900 950 ser z o = 10 w v dd = 28 vdc, i dq = 170 ma, p out = 7.5 w (pep) f mhz z in ohms z ol * ohms 800 2.15 j2.2 12.45 j7.0 850 2.11 j3.5 12.65 j8.5 900 2.14 j4.0 12.95 j10.0 950 2.20 j5.0 13.52 j11.5 1000 2.35 j5.8 14.11 j13.7 z in = complex conjugate of source impedance. z ol * = complex conjugate of the load impedance at given output power, voltage, frequency and efficiency. note: z ol * was chosen based on tradeoffs between gain, drain efficiency, and device stability. figure 16. series equivalent input and output impedance z in z ol * input matching network device under test output matching network
lifetime buy last order 31jul04 last ship 31jan05 5.2159 MRF181SR1 mrf181zr1 motorola wireless rf, if and transmitter device data table 1. common emitter sparameters (v ds = 26 vdc) i d = 500 ma f s 11 s 21 s 12 s 22 f mhz |s 11 | f |s 21 | f |s 12 | f |s 22 | f 10 0.944 10 31.66 174 0.004 84 0.772 7 20 0.940 20 31.23 168 0.008 78 0.765 14 30 0.934 30 30.54 162 0.011 73 0.752 21 40 0.927 39 29.66 156 0.015 67 0.736 28 50 0.918 48 28.62 151 0.018 62 0.718 34 100 0.873 83 22.81 129 0.028 41 0.620 60 150 0.843 106 17.94 114 0.033 28 0.549 78 200 0.827 121 14.44 103 0.035 18 0.509 90 250 0.820 131 11.94 95 0.036 11 0.490 99 300 0.817 139 10.09 88 0.036 6 0.484 105 350 0.817 145 8.69 82 0.036 1 0.487 111 400 0.820 149 7.59 77 0.035 3 0.496 115 450 0.823 153 6.71 72 0.034 7 0.508 118 500 0.828 156 5.99 68 0.033 10 0.523 122 550 0.833 159 5.39 64 0.032 12 0.538 125 600 0.839 161 4.88 60 0.031 15 0.555 127 650 0.845 163 4.44 56 0.029 17 0.572 130 700 0.851 165 4.06 52 0.028 19 0.589 132 750 0.857 167 3.73 49 0.026 20 0.606 134 800 0.864 169 3.44 45 0.025 22 0.622 137 850 0.870 171 3.18 42 0.023 23 0.638 139 900 0.876 172 2.95 39 0.022 23 0.654 141 950 0.882 174 2.74 36 0.020 24 0.669 143 1000 0.888 175 2.55 33 0.018 24 0.683 144 1050 0.893 176 2.38 30 0.017 23 0.697 146 1100 0.899 178 2.23 28 0.015 22 0.710 148 1150 0.904 179 2.09 25 0.014 20 0.722 150 1200 0.909 180 1.96 22 0.012 16 0.734 151 1250 0.914 179 1.85 20 0.011 12 0.745 153 1300 0.918 177 1.74 17 0.010 6 0.756 155 1350 0.922 176 1.64 15 0.009 1 0.766 156 1400 0.927 175 1.55 13 0.009 10 0.775 158 1450 0.931 174 1.47 10 0.008 20 0.784 159 1500 0.934 173 1.39 8 0.008 30 0.793 161
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