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igbt igbtwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD10N60RA 600vtrenchstop tm rc-seriesforhardswitchingapplications datasheet industrialpowercontrol
2 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 igbtwithintegrateddiodeinpackagesofferingspacesavingadvantage features: trenchstop tm reverseconducting(rc)technologyfor600v applicationsoffering ?optimisedv cesat andv f forlowconductionlosses ?smoothswitchingperformanceleadingtolowemilevels ?verytightparameterdistribution ?operatingrangeof1to20khz ?maximumjunctiontemperature175c ?shortcircuitcapabilityof5s ?bestinclasscurrentversuspackagesizeperformance ?qualifiedaccordingtoaecq101 ?pb-freeleadplating;rohscompliant(forpg-to252:solder temperature260c,msl1) completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?hidlighting ?piezoinjection keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKD10N60RA 600v 10a 1.65v 175c k10r60a pg-to252-3 g c e g e c
3 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 g c e g e c
4 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 maximumratings parameter symbol value unit collector-emitter voltage v ce 600 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 20.0 10.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 30.0 a turnoffsafeoperatingarea v ce 600v, t vj 175c - 30.0 a diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 20.0 10.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 30.0 a gate-emitter voltage v ge 20 v short circuit withstand time v ge =15.0v, v cc 400v allowed number of short circuits < 1000 time between short circuits: 3 1.0s t vj =150c t sc 5 s powerdissipation t c =25c p tot 150.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+175 c soldering temperature, reflow soldering (msl1 according to jedec j-sta-020) 260 c thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, 1) junction - case r th(j-c) 1.00 k/w diode thermal resistance, 2) junction - case r th(j-c) 2.60 k/w thermal resistance, min. footprint junction - ambient r th(j-a) 75 k/w thermal resistance, 6cm2 cu on pcb junction - ambient r th(j-a) 50 k/w 1) rth/zth based on single cooling pulse. please be aware that a correct rth measurement of the igbt, is not possible using a thermocouple. 2) rth/zth based on single cooling pulse. please be aware that a correct rth measurement of the diode, is not possible using a thermocouple. g c e g e c
5 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 600 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =10.0a t vj =25c t vj =175c - - 1.65 1.85 2.10 - v diode forward voltage v f v ge =0v, i f =10.0a t vj =25c t vj =175c - - 1.70 1.70 2.10 - v gate-emitter threshold voltage v ge(th) i c =0.17ma, v ce = v ge 4.3 5.0 5.7 v zero gate voltage collector current 1) i ces v ce =600v, v ge =0v t vj =25c t vj =175c - - - - 40.0 1000.0 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =10.0a - 6.1 - s integrated gate resistor r g none w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 655 - output capacitance c oes - 37 - reverse transfer capacitance c res - 22 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =480v, i c =10.0a, v ge =15v - 64.0 - nc short circuit collector current max. 1000 short circuits time between short circuits: 3 1.0s i c(sc) v ge =15.0v, v cc 400v, t sc 5s t vj =25c - 74 - a switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 14 - ns rise time t r - 10 - ns turn-off delay time t d(off) - 192 - ns fall time t f - 139 - ns turn-on energy e on - 0.21 - mj turn-off energy e off - 0.38 - mj total switching energy e ts - 0.59 - mj t vj =25c, v cc =400v, i c =10.0a, v ge =0.0/15.0v, r g =23.0 w , l s =60nh, c s =40pf l s , c s fromfig.e 1) not subject to production test - verified by design/characterization g c e g e c
6 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 62 - ns diode reverse recovery charge q rr - 0.56 - c diode peak reverse recovery current i rrm - 20.3 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -260 - a/s t vj =25c, v r =400v, i f =10.0a, di f /dt =1000a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 13 - ns rise time t r - 11 - ns turn-off delay time t d(off) - 217 - ns fall time t f - 211 - ns turn-on energy e on - 0.35 - mj turn-off energy e off - 0.58 - mj total switching energy e ts - 0.93 - mj t vj =175c, v cc =400v, i c =10.0a, v ge =0.0/15.0v, r g =23.0 w , l s =60nh, c s =40pf l s , c s fromfig.e diodecharacteristic,at t vj =175c diode reverse recovery time t rr - 98 - ns diode reverse recovery charge q rr - 1.22 - c diode peak reverse recovery current i rrm - 20.5 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -259 - a/s t vj =175c, v r =400v, i f =10.0a, di f /dt =1000a/s g c e g e c
7 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 figure 1. collectorcurrentasafunctionofswitching frequency (tvj 175c, ta=55c, d=0.5, v ce =400v, v ge =15/0v, r g =23 w , pcb mounting with thermal vias and heatsink, see appnote: www.infineon.com/igbt) f ,switchingfrequency[khz] i c ,collectorcurrent[a] 0.1 1 10 100 0 1 2 3 4 5 6 7 8 9 10 11 ptot=8,6w, rthja=8,4k/w figure 2. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 t p =1s 10s 20s 50s 100s 500s dc figure 3. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 figure 4. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 0 25 50 75 100 125 150 175 0 5 10 15 20 g c e g e c
8 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 figure 5. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 0 5 10 15 20 25 30 v ge =20v 17v 15v 13v 11v 9v 7v figure 6. typicaloutputcharacteristic ( t vj =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 0 5 10 15 20 25 30 v ge =20v 17v 15v 13v 11v 9v 7v figure 7. typicaltransfercharacteristic ( v ce =10v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 4 6 8 10 12 14 0 5 10 15 20 25 30 t j =25c t j =175c figure 8. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i c =5a i c =10a i c =20a g c e g e c
9 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 figure 9. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =175c, v ce =400v, v ge =15/0v, r g =23 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 5 10 15 20 1 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionofgate resistor (inductiveload, t vj =175c, v ce =400v, v ge =15/0v, i c =10a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 10 20 30 40 50 60 70 80 1 10 100 1000 t d(off) t f t d(on) t r figure 11. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =15/0v, i c =10a, r g =23 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 12. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.17ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 175 2 3 4 5 6 7 typ. min. max. g c e g e c
10 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 figure 13. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =175c, v ce =400v, v ge =15/0v, r g =23 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 5 10 15 20 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofgateresistor (inductiveload, t vj =175c, v ce =400v, v ge =15/0v, i c =10a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =15/0v, i c =10a, r g =23 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 e off e on e ts figure 16. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =175c, v ge =15/0v, i c =10a, r g =23 w ,dynamictestcircuitin figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 300 350 400 450 0.0 0.2 0.4 0.6 0.8 1.0 1.2 e off e on e ts g c e g e c
11 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 figure 17. typicalgatecharge ( i c =10a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 10 20 30 40 50 60 70 0 2 4 6 8 10 12 14 16 120v 480v figure 18. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 10 100 1000 c ies c oes c res figure 19. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 400v,startat t vj =25c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 12 14 16 18 20 0 50 100 150 figure 20. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce 400v,startat t vj 150c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 11 12 13 14 15 0 2 4 6 8 10 12 14 g c e g e c
12 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 figure 21. igbttransientthermalimpedanceasa functionofpulsewidth 1) (seepage4) ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.0972 1.1e-4 2 0.4393 4.5e-4 3 0.3919 2.0e-3 4 0.0443 0.03487 figure 22. diodetransientthermalimpedanceasa functionofpulsewidth 2) (seepage4) ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.3192 6.4e-5 2 1.604 2.6e-4 3 0.6161 1.6e-3 4 0.0732 0.0218066 figure 23. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 900 1000 1100 1200 0 25 50 75 100 125 150 t j =175c, i f = 10a t j =25c, i f = 10a figure 24. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 900 1000 1100 1200 0.25 0.50 0.75 1.00 1.25 1.50 t j =175c, i f = 10a t j =25c, i f = 10a g c e g e c
13 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 figure 25. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 900 1000 1100 1200 19 20 21 22 t j =175c, i f = 10a t j =25c, i f = 10a figure 26. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 900 1000 1100 1200 -400 -300 -200 -100 0 t j =175c, i f = 10a t j =25c, i f = 10a figure 27. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0 1 2 3 0 10 20 30 t j =25c, u g =0v t j =175c, u g =0v figure 28. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 i f =5a i f =10a i f =20a g c e g e c
14 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 g c e g e c p g - t o 2 5 2 - 3
15 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 g c e g e c p g - t o 2 5 2 - 3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3
16 IKD10N60RA trenchstop tm rc-seriesforhardswitchingapplications rev.2.2,2014-02-28 revisionhistory IKD10N60RA revision:2014-02-28,rev.2.2 previous revision revision date subjects (major changes since last revision) 1.1 2010-06-10 preliminary datasheet 2.1 2010-10-28 release of final datasheet 2.2 2014-02-28 data sheet with aecq logo welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com publishedby infineontechnologiesag 81726munich,germany 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestinfineon technologiesoffice(www.infineon.com). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesin question,pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineon technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. g c e g e c p g - t o 2 5 2 - 3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3

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