? silikron semiconductor co.,ltd. 2009.7.10 version : 1.0 page 1of5 SSF6807 absolute maximum ratings parameter max. units i d @t c =25 ? c continuous drain current,vgs@10v 84 a i d @t c =100 ? c continuous drain current,vgs@10v 76 i dm pulsed drain current 310 p d @t c =25 ? c power dissipation 150 w linear derating factor 1.5 w/ ? c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 400 mj e ar repetitive avalanche energy tbd mj dv/dt peak diode recovery voltage 31 v/ns t j t stg operating junction and storage temperature range ?55 to +150 ? c thermal resistance parameter min. typ. max. units r jc junction-to-case ? 0.83 ? ? c/w r ja junction-to-ambient ? ? 62 electrical characteristics @tj=25 ? c(unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 60 ? ? v v gs =0v,i d =250 a r ds(on) static drain-to-source on-resistance ? 0.0057 0.008 ? v gs =10v,i d =30a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds =v gs ,i d =250 a i dss drain-to-source leakage current ? ? 2 a v ds =60v,v gs =0v ? ? 10 v ds =60v, v gs =0v,t j =150 ? c i gss gate-to-source forward leakage ? ? 100 na v gs =20v gate-to-source reverse leakage ? ? -100 v gs =-20v SSF6807 top view (t0-220) id =84a bv=60v rdson=0.008 ? feathers: ? advanced trench process technology ? avalanche energy, 100% test ? fully characterized avalanche voltage and current description: the SSF6807 is a new generation of high voltage and low current n?channel enhancement mode trench power mosfet. this new technology in creases the dev ice reliability and electrical parameter repeatability. SSF6807 is assembled in high reliability and qualified assembly house. application: ? power switching application
? silikron semiconductor co.,ltd. 2009.7.10 version : 1.0 page 2of5 SSF6807 q g total gate charge ? 90 nc i d =30a,v gs =10v v dd =30v q gs gate-to-source charge ? 18 ? q gd gate-to-drain("miller") charge ? 28 ? t d(on) turn-on delay time ? 18.2 ns v dd =30v i d =2a ,r l =15 ? r g =2.5 ? v gs =10v t r rise time ? 15.6 t d(off) turn-off delay time ? 70.5 t f fall time ? 13.8 c iss input capacitance ? 3150 pf v gs =0v v ds =25v f=1.0mhz c oss output capacitance ? 300 c rss reverse transfer capacitance ? 240 source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current . (body diode) ? ? 84 a mosfet symbol showing the integral reverse p-n junction diode. i sm pulsed source current . (body diode) ? ? 310 v sd diode forward voltage ? ? 1.3 v t j =25 ? c,i s =60a,v gs =0v t rr reverse recovery time 57 ? ns t j =25 ? c,i f =75a di/dt=100a/ s q rr reverse recovery charge 107 ? c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) eas test circuit: gate charge test circuit: notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, vdd = 30v,id=37a pulse width 300 s, duty cycle 1.5% ; rg = 25 ? ? ? starting tj = 25c
? silikron semiconductor co.,ltd. 2009.7.10 version : 1.0 page 3of5 SSF6807 switch time test circuit: switch waveform: transfer characteristic capacitance on resistance vs junction temperature breakdown voltage vs junction temperature
? silikron semiconductor co.,ltd. 2009.7.10 version : 1.0 page 4of5 SSF6807 gate charge source-drain diode forward voltage safe operation area max drain current vs junction transient thermal impedance curve
? silikron semiconductor co.,ltd. 2009.7.10 version : 1.0 page 5of5 SSF6807 to-220 mechanical data:
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