01/99 b-57 j212 n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 25 v continuous forward gate current 10 ma continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount SMPJ212 at 25c free air temperature: j212 process nj26l static electrical characteristics min typ max unit test conditions gate source breakdown voltage v (br)gss C 25 v i g = C 1 a, v ds = ? v gate reverse current i gss C 100 pa v gs = C 15 v, v ds = ?v gate operating current i g C 10 pa v ds = 20 v, i d = 1 ma gate source cutoff voltage v gs(off) C 4 C 6 v v ds = 15 v, i d = 1 na drain saturation current (pulsed) i dss 15 40 ma v ds = 15 v, v gs = ? v dynamic electrical characteristics common source forward transconductance g fs 7000 12000 s v ds = 15 v, v gs = ? v f = 1 khz common source output conductance g os 200 s v ds = 15 v, v gs = ? v f = 1 khz common source input capacitance c iss 4pfv ds = 15 v, v gs = ? v f = 1 mhz common source reverse transfer c rss 1pfv ds = 15 v, v gs = ? v f = 1 mhz capacitance equivalent short circuit e n 10 nv/ hz v ds = 15 v, v gs = ? v f = 1 khz input noise voltage audio amplifier general purpose amplifier 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-57
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