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september 2009 doc id 15316 rev 3 1/18 18 stb32n65m5, stf32n65m5, sti32n65m5 stp32n65m5, STW32N65M5 n-channel 650 v, 0.095 ? , 24 a, mdmesh? v power mosfet in d 2 pak, i 2 pak, to-220fp, to-220, to-247 features worldwide best r ds(on) * area higher v dss rating high dv/dt capability excellent switching performance easy to drive 100% avalanche tested application switching applications description mdmesh v is a revolutionary power mosfet technology, which comb ines an innovative proprietary vertical process with the well known company?s powermesh? horizontal layout. the resulting product has an extremely low on- resistance, unmatched among silicon-based power mosfets, making it especially suited for applications which require superior power density and outstanding efficiencies. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d stb32n65m5 stf32n65m5 sti32n65m5 stp32n65m5 STW32N65M5 710 v 710 v 710 v 710 v 710 v < 0.119 ? < 0.119 ? < 0.119 ? < 0.119 ? < 0.119 ? 24 a 24 a (1) 24 a 24 a 24 a 1. limited only by maximum temperature allowed 1 3 1 2 3 1 2 3 1 2 3 1 2 3 to-220 to-220fp d2pak i2pak to-247 !-v $ ' 3 table 1. device summary order codes marking package packaging stb32n65m5 stf32n65m5 sti32n65m5 stp32n65m5 STW32N65M5 32n65m5 32n65m5 32n65m5 32n65m5 32n65m5 d2pak to-220fp i2pak to-220 to-247 tape and reel tu b e tu b e tu b e tu b e www.st.com
contents stb/f/i/p/w32n65m5 2/18 doc id 15316 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
stb/f/i/p/w32n65m5 electrical ratings doc id 15316 rev 3 3/18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220, d2pak to-247, i2pak to-220fp v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 24 24 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 15 15 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 96 96 (1) a p tot total dissipation at t c = 25 c 150 35 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 8a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 650 mj dv/dt (3) 3. i sd 24 a, di/dt = 400 a/s, peak v ds < v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d2pak i2pak to-220 to-247 to-220fp r thj-case thermal resistance junction- case max 0.83 3.6 c/w r thj-amb thermal resistance junction- ambient max 62.5 50 62.5 c/w r thj-pcb thermal resistance junction-pcb max 30 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics stb/f/i/p/w32n65m5 4/18 doc id 15316 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 12 a 0.095 0.119 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 3320 75 5 - pf pf pf c o(tr) (1) 1. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 520 v - 210 - pf c o(er) (2) 2. c oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related v gs = 0, v ds = 0 to 520 v - 357 - pf r g intrinsic gate resistance f = 1 mhz open drain - 2 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 12 a, v gs = 10 v (see figure 20 ) - 72 17 29 - nc nc nc
stb/f/i/p/w32n65m5 electrical characteristics doc id 15316 rev 3 5/18 table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 400 v, i d = 14 a, r g = 4.7 ?, v gs = 10 v (see figure 21 ) - 53 12 56 16 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 24 96 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 24 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 24 a, di/dt = 100 a/s v dd = 60 v (see figure 21 ) - 375 6 33 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 24 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 21 ) - 440 8 36 ns nc a
electrical characteristics stb/f/i/p/w32n65m5 6/18 doc id 15316 rev 3 2.1 electrical characterist ics (curves) figure 2. safe operating area for to-220, d2pak, i2pak figure 3. thermal impedance for to-220, d 2 pa k , i 2pa k figure 4. safe operating area for to-247 figure 5. thermal impedance for to-247 figure 6. safe operating area for to-220fp figure 7. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0544 8 v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am05450v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 0.01 am05449v1
stb/f/i/p/w32n65m5 electrical characteristics doc id 15316 rev 3 7/18 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 3 0 20 10 0 0 10 v d s (v) 20 (a) 5 15 25 40 50 5v 6v v g s =10v 3 0 am05451v1 i d 3 0 20 10 0 0 4 v g s (v) 8 (a) 2 6 10 40 50 am05452v1 v g s 6 4 2 0 0 20 q g (nc) (v) 8 0 8 40 60 10 v dd =520v i d =12a 12 3 20 240 160 0 400 560 v d s v g s 8 0 4 8 0 am05457v1 r d s (on) 0.071 0.051 0.0 3 1 0.011 0 10 i d (a) ( ? ) 5 15 0.091 0.111 i d =12a v g s =10v 20 25 am05454v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am05455v1 e o ss 6 4 2 0 0 100 v d s (v) ( j) 400 8 200 3 00 10 12 500 600 14 am05456v1
electrical characteristics stb/f/i/p/w32n65m5 8/18 doc id 15316 rev 3 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature figure 18. switching losses vs gate resistance (1) 1. eon including reverse re covery of a sic diode v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 am05459v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 am05460v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 1.05 1.07 150 am0545 3 v1 e 200 100 0 0 20 r g ( ? ) ( j) 10 3 0 40 i d =15a v cl =400v eon eoff v g s =10v 400 3 00 am0545 8 v1
stb/f/i/p/w32n65m5 test circuits doc id 15316 rev 3 9/18 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive wavefor m figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stb/f/i/p/w32n65m5 10/18 doc id 15316 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stb/f/i/p/w32n65m5 package mechanical data doc id 15316 rev 3 11/18 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
package mechanical data stb/f/i/p/w32n65m5 12/18 doc id 15316 rev 3 dim. mm . x a m . p y t . n i m 6 . 4 4 . 4 a 7 . 2 5 . 2 b 5 7 . 2 5 . 2 d 7 . 0 5 4 . 0 e 1 5 7 . 0 f 0 7 . 1 5 1 . 1 1 f 5 . 1 5 1 . 1 2 f 2 . 5 5 9 . 4 g 7 . 2 4 . 2 1 g 4 . 0 1 0 1 h 6 1 2 l 6 . 0 3 6 . 8 2 3 l 6 . 0 1 8 . 9 4 l 6 . 3 9 . 2 5 l 4 . 6 1 9 . 5 1 6 l 3 . 9 9 7 l 2 . 3 3 a i d 7012510_rev_j a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 to-220fp mechanical data
stb/f/i/p/w32n65m5 package mechanical data doc id 15316 rev 3 13/18 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
package mechanical data stb/f/i/p/w32n65m5 14/18 doc id 15316 rev 3 i2pak (to-262) mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 a1 2.40 2.72 0.094 0.107 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.2 3 1. 3 20.04 8 0.052 d 8 .95 9. 3 50. 3 52 0. 3 6 8 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0. 3 9 3 0.410 l1 3 14 0.511 0.551 l1 3 .50 3 .9 3 0.1 3 7 0.154 l2 1.27 1.40 0.050 0.055
stb/f/i/p/w32n65m5 package mechanical data doc id 15316 rev 3 15/18 d2pak (to-26 3 ) mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 a1 0.0 3 0.2 3 0.001 0.00 9 b 0.70 0. 93 0.027 0.0 3 7 b 2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.2 3 1. 3 60.04 8 0.05 3 d 8 . 9 5 9 . 3 50. 3 52 0. 3 6 8 d1 7.50 0.2 9 5 e 10 10.40 0. 39 40.40 9 e1 8 .50 0. 33 4 e 2.54 0.1 e1 4. 88 5.2 8 0.1 9 20.20 8 h15 15. 8 50.5 9 00.624 j1 2.4 9 2.6 9 0.0 99 0.106 l2.2 9 2.7 9 0.0 9 0 0.110 l1 1.27 1.40 0.05 0.055 l2 1. 3 0 1.75 0.051 0.06 9 r 0.4 0.016 v2 0 8 0 8 0079457_m
packaging mechanical data stb/f/i/p/w32n65m5 16/18 doc id 15316 rev 3 5 packaging mechanical data tape and reel shipment d 2 pak footprint dim. mm inch min. max. min. max. a 33 0 12.992 b 1.5 0.059 c12. 8 1 3 .2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.0 3 9 n 100 3 .9 3 7 t 3 0.4 1.197 ba s e qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.41 3 0.421 b0 15.7 15.9 0.61 8 0.626 d 1.5 1.6 0.059 0.06 3 d1 1.59 1.61 0.062 0.06 3 e1.651. 8 5 0.065 0.07 3 f 11.4 11.6 0.449 0.456 k0 4. 8 5.0 0.1 8 9 0.197 p0 3 .9 4.1 0.15 3 0.161 p1 11.9 12.1 0.46 8 0.476 p2 1.9 2.1 0.075 0.0 8 2 r 50 1.574 t0.250. 3 5 0.009 8 0.01 3 7 w 2 3 .7 24. 3 0.9 33 0.956 tape mechanical data
stb/f/i/p/w32n65m5 revision history doc id 15316 rev 3 17/18 6 revision history table 8. document revision history date revision changes 16-jan-2009 1 first release 01-sep-2009 2 document status promoted from preliminary data to datasheet. 30-sep-2009 3 corrected v gs value on table 2: absolute maximum ratings
stb/f/i/p/w32n65m5 18/18 doc id 15316 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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