d a t a sh eet discrete semiconductors BFS540 product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
features high power gain low noise figure high transition frequency gold metallization ensures excellent reliability sot323 envelope. description npn transistor in a plastic sot323 envelope. it is intended for rf wideband amplifier applications such as satellite tv systems and rf portable communication equipment with signal frequencies up to 2 ghz. pinning pin description code: n4 1 base 2 emitter 3 collector fig.1 sot323. handbook, 2 columns 3 12 mbc870 top view quick reference data limiting values in accordance with the absolute maximum system (iec 134). note 1. t s is the temperature at the soldering point of the collector tab. symbol parameter conditions min. typ. max. unit v cbo collector-base voltage open emitter -- 20 v v ceo collector-emitter voltage open base -- 15 v i c dc collector current -- 120 ma p tot total power dissipation up to t s =80 c; note 1 -- 500 mw h fe dc current gain i c = 40 ma; v ce = 8 v; t j =25 c 60 120 250 f t transition frequency i c = 40 ma; v ce = 8 v; f = 1 ghz; t amb =25 c - 9 - ghz g um maximum unilateral power gain i c = 40 ma; v ce = 8 v; f = 900 mhz; t amb =25 c - 14 - db f noise ?gure i c = 10 ma; v ce = 8 v; f = 900 mhz; t amb =25 c - 1.3 1.7 db symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 20 v v ces collector-emitter voltage r be =0 - 15 v v ebo emitter-base voltage open collector - 2.5 v i c dc collector current - 120 ma p tot total power dissipation up to t s =80 c; note 1 - 500 mw t stg storage temperature - 65 150 c t j junction temperature - 175 c product specification BFS540 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
thermal resistance note 1. t s is the temperature at the soldering point of the collector tab. characteristics t j =25 c, unless otherwise speci?ed. notes 1. g um is the maximum unilateral power gain, assuming s 12 is zero and 2. i c = 40 ma; v ce = 8 v; r l =50 w ; f = 900 mhz; t amb =25 c; f p = 900 mhz; f q = 902 mhz; measured at f (2p - q) = 898 mhz and at f (2q - p) = 904 mhz. symbol parameter conditions thermal resistance r th j-s thermal resistance from junction to soldering point up to t s =80 c; note 1 190 k/w symbol parameter conditions min. typ. max. unit i cbo collector cut-off current i e = 0; v ce =8 v -- 50 na h fe dc current gain i c = 40 ma; v ce = 8 v 60 120 250 c e emitter capacitance i c =i c = 0; v eb = 0.5 v; f = 1 mhz - 2 - pf c c collector capacitance i e =i e = 0; v cb = 8 v; f = 1 mhz - 0.9 - pf c re feedback capacitance i c = 0; v cb = 8 v; f = 1 mhz - 0.6 - pf f t transition frequency i c = 40 ma; v ce = 8 v; f = 1 ghz; t amb =25 c - 9 - ghz g um maximum unilateral power gain (note 1) i c = 40 ma; v ce = 8 v; f = 900 mhz; t amb =25 c - 14 - db i c = 40 ma; v ce = 8 v; f = 2 ghz; t amb =25 c - 8 - db s 21 2 insertion power gain i c = 40 ma; v ce = 8 v; f = 900 mhz; t amb =25 c 12 13 - db f noise ?gure g s = g opt ;i c = 10 ma; v ce =8 v; f = 900 mhz; t amb =25 c - 1.3 1.8 db g s = g opt ;i c = 40 ma; v ce =8 v; f = 900 mhz; t amb =25 c - 1.9 2.4 db g s = g opt ;i c = 10 ma; v ce =8 v; f = 2 ghz; t amb =25 c - 2.1 - db p l1 output power at 1 db gain compression i c = 40 ma; v ce = 8 v; r l =50 w ; f = 900 mhz; t amb =25 c - 21 - dbm ito third order intercept point note 2 - 34 - dbm g um 10 log s 21 2 1s 11 2 C ? ?? 1s 22 2 C ? ?? -------------------------------------------------------------- db. = product specification BFS540 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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