? 2009 ixys all rights reserved 1 - 3 advanced technical information vvzb 170 20091110b symbol conditions maximum ratings v rrm 1600 v i davm t c = 85c; sinusoidal 120 1 7 0 a i fsm t vj = 45c; t = 10 ms; v r = 0 v 9 0 0 a t vj = 150c; t = 10 ms; v r = 0 v 7 8 0 a i 2 t t vj = 45c; t = 10 ms; v r = 0 v 4050 a t vj = 150c; t = 10 ms; v r = 0 v 3040 a p tot t c = 25c per diode 2 5 0 w (di/dt) cr t vj = t vjm ; repetitive; i t = 150 a 150 a/s f = 50 hz; t p = 200 s ; v d = 2 / 3 v drm ; i g = 0.45 a; non repetitive; i t = i d(av) / 3 500 a/s di g /dt = 0.45 a/s (dv/dt) cr t vj = t vjm ; v dr = 2 / 3 v drm ; 1000 v/s r gk = ; method 1 (linear voltage rise) p gm t vj = t vjm ;t p = 30 s 1 0 w i t = i d(av) /3 ; t p = 300 s 5 w p gavm 0.5 w v ces t vj = 25c to 150c 1200 v v ge continuous 20 v i c25 t c = 25c; dc 1 4 1 a i c80 t c = 80c; dc 1 0 0 a i cm t p = pulse width limited by t vjm 150 a p tot t c = 25c 5 7 0 w v rrm 1200 v i fav t c = 80c ; rectangular d = 0.5 2 7 a i frms t c = 80c ; rectangular d = 0.5 3 8 a i frm t c = 80c ; t p = 10 s ; f = 5 khz tbd a i fsm t vj = 45c; t = 10 ms 2 0 0 a p tot t c = 25c 1 3 0 w v rrm type v 1600 vvzb 170-16 no1 igbt fast recovery diode rectifier bridge features ? soldering connections for pcb mounting ? convenient package outline ? thermistor applications ? drive inverters with brake system advantages ? 2 functions in one package ? easy to mount with two screws ? suitable for wave soldering ? high temperature and power cycling capability data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions. v rrm = 1600 v i da v m = 170 a three phase rectifier bridg e with igbt and f ast reco ver y diode f or braking system 6+7 4+5 2+3 19 + 20 12 13 10 + 11 1 21+22 18 8+9 ntc 16 15 14 17 see outline drawing for pin arrangement e72873 recommended replacement: vvzb 170-16ioxt pdf create 8 trial www.nuance.com p h a s e - o u t http://
? 2009 ixys all rights reserved 2 - 3 advanced technical information vvzb 170 20091110b i r , i d v r = v rrm ; t vj = 25c 0 . 1 m a v r = v rrm ; t vj = 150c 2 0 ma v f , v t i f = 150 a; t vj = 25c 1.68 v v t0 for power-loss calculations only 0.85 v r t t vj = 150c 5 . 9 m v gt v d = 6 v; t vj = 25c 1.5 v t vj = -40c 1 . 6 v i gt v d = 6 v; t vj = 25c 9 5 m a t vj = -40c 2 0 0 ma v gd t vj = t vjm ;v d = 2 / 3 v drm 0.2 v i gd t vj = t vjm ;v d = 2 / 3 v drm 10 ma i l v d = 6 v; t g = 10 s; 4 5 0 m a di g /dt = 0.45 a/s; i g = 0.45 a i h t vj = t vjm ; v d = 6 v; r gk = 200 ma t gd v d = ? v drm ;2 s di g /dt = 0.45 a/s; i g = 0.45 a t q t vj = t vjm ; v r = 100 v; v d = 2 / 3 v drm ; 150 s t p = 200 s; dv/dt = 20 v/s; i t = 120 a; -di/dt = 10 a/s r thjc per rectifier 0 . 5 k / w r thch 0.1 k/w v br(ces) v gs = 0 v; i c = 0.1 ma 1200 v v ge(th) i c = 3 m a 4.5 6.45 v i ces v ce = 1200 v; t vj = 25c 0 . 1 m a v ce = 0,8 ? v ces ;t vj = 125c 0 . 5 ma v cesat v ge = 15 v; i c = 150 a 3 . 7 v t sc (scsoa) v ge = 15 v; v ce = 900 v; t vj = 125c 1 0 s rbsoa v ge = 15 v; v ce = 1200 v; t vj = 125c; 1 5 0 a clamped inductive load; l = 100 h; r g = 15 c ies v ce = 25 v; f = 1 mhz; v ge = 0 v 5 . 7 nf t d(on) 150 ns t d(off) 680 ns e on 9m j e off 7.5 mj r thjc 0.22 k/w r thjh 0.4 k/w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. rectifier diodes v ce = 720 v; i c = 75 a ; v ge = 15 v; r g = 15 ; inductive load; l = 100 h ; t vj = 125c igbt rectifier bridge 0.001 0.01 0.1 1 10 0.0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 z th j c [k / w ] t [s] r i i 1 0.02308 0.0004 2 0.06385 0.007 3 0.2777 0.092 4 0.1354 0.44 fig. 1 transient thermal impedance junction to case (per thyristor/diode) pdf create 8 trial www.nuance.com p h a s e - o u t
? 2009 ixys all rights reserved 3 - 3 advanced technical information vvzb 170 20091110b symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. i r v r = v rrm , t vj = 25c 0.25 m a v r = 1200 v, t vj = 125c 1 ma v f i f = 30 a, t vj = 25c 2.76 v v t0 for power-loss calculations only 1 . 3 v r t t vj = 150c 16 m i rm i f = 50 a, -di f /dt = 100 a/s, v r = 100 v 5.5 11 a t rr i f = 1 a, -di f /dt = 200 a/s, v r = 30 v 40 ns r thjc 0.9 k/w r thch 0.1 k/w r 25 4.75 5.0 5.25 k b 25/50 3375 k symbol conditions maximum ratings t vj -40...+150 c t vjm 150 c t stg -40...+125 c v isol 50/60 hz, t = 1 min 2500 v~ i isol 1 ma, t = 1 s 3000 v~ m d mounting torque 2.7...3.3 nm d s creep distance on surface 12.7 m m d a strike distance in air 9.6 m m a maximum allowable acceleration 50 m/s 2 weight typ. 180 g fast recovery diode ntc module dimensions in mm (1 mm = 0.0394") r(t) = r 25 ? e b 25/100 11 t 298k ( ) pdf create 8 trial www.nuance.com p h a s e - o u t
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