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hexfet power mosfet notes through are on page 2 pqfn 5mm x 6mm applications ?
features and benefits features resulting benefits low r dson ( 4.6m ?) lower conduction losses industry-standard pqfn package multi-vendor compatibility rohs compliant containing no lead, no bromide and no halogen environmentally friendlier results in ? 6 mm 5 mm note form quantit y irfh9310trpbf pqfn 5mm x 6mm ta p e and reel 4000 orderable part number package type standard pack v ds -30 v r ds(on) max (@v gs = 10v) 4.6 m ? q g (typical) 110 nc r g (typical) 2.8 ? i d (@t a = 25c) -21 a absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ -10v i d @ t a = 70c continuous drain current, v gs @ -10v i d @ t c = 25c continuous drain current, v gs @ -10v (silicon limited) i d @ t c = 70c continuous drain current, v gs @ -10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ -10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @ t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. -21 - 86 -170 20 -30 -17 -107 -40 -55 to + 150 3.1 0.025 2.0

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!" repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.1mh, r g = 50 ? , i as = -17a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at t j of approximately 90c. for design aid only, not subject to production testing. g d s static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.020 ??? v/c r ds(on) ??? 3.7 4.6 ??? 5.7 7.1 v gs(th) gate threshold voltage -1.3 -1.9 -2.4 v ? v gs(th) gate threshold voltage coefficient ??? -5.8 ??? mv/c i dss drain-to-source leakage current ??? ??? -1.0 ??? ??? -150 i gss gate-to-source forward leakage ??? ??? -100 gate-to-source reverse leakage ??? ??? 100 gfs forward transconductance 39 ??? ??? s q g total gate charge ??? 58 ??? nc v ds = -15v,v gs = -4.5v,i d = - 17a q g total gate charge ??? 110 165 q gs gate-to-source charge ??? 17 ??? q gd gate-to-drain charge ??? 28 ??? r g gate resistance ??? 2.8 ??? ? t d(on) turn-on delay time ??? 25 ??? t r rise time ??? 47 ??? t d(off) turn-off delay time ??? 65 ??? t f fall time ??? 70 ??? c iss input capacitance ??? 5250 ??? c oss output capacitance ??? 1300 ??? c rss reverse transfer capacitance ??? 880 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 42 63 ns q rr reverse recovery charge ??? 42 63 nc thermal resistance parameter units r jc j unct i on-to- c ase r ja j unct i on-to- a m bi ent r ja junction-to-ambient (t<10s) ??? typ. ??? ??? max. 1.6 35 40 static drain-to-source on-resistance a ??? ??? ??? ??? -3.1 -170 na nc ns pf ??? typ. ??? r g = 1.8 ? v ds = -10v, i d = -17a v ds = -24v, v gs = 0v, t j = 125c v dd = -15v, v gs = -4.5v i d = -1.0a v ds = -15v v gs = -20v v gs = 20v v gs = -10v m ? a t j = 25c, i f = -3.1a, v dd = -24v di/dt = 100/s t j = 25c, i s = -3.1a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol i d = -17a v ds = -24v, v gs = 0v conditions v gs = 0v, i d = -250a reference to 25c, i d = -1ma v gs = -10v, i d = -21a v gs = -4.5v, i d = -17a v ds = v gs , i d = -100a c/w conditions see figs. 19a & 19b max. 170 -17 ? = 1.0mhz v gs = 0v v ds = -15v

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!" fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -5.0v -4.5v -3.5v -3.3v -3.1v -2.9v bottom -2.7v 60s pulse width tj = 25c 2.7v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -2.7v 60s pulse width tj = 150c vgs top -10v -5.0v -4.5v -3.5v -3.3v -3.1v -2.9v bottom -2.7v 1 2 3 4 5 -v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -15v 60s pulse width 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 25 50 75 100 125 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -24v v ds = -15v vds = -6.0v i d = -17a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -21a v gs = -10v

!" fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 8. maximum safe operating area fig 9. maximum drain current vs. ambient temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -v sd , source-to-drain voltage (v) 1.0 10 100 1000 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t a , ambient temperature (c) 0 5 10 15 20 25 - i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = -100a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a 0 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec dc

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!" fig 14. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 13. typical on-resistance vs. drain current fig 15 typical power vs. time

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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fig 16.
for p-channel hexfet power mosfets 0 20 40 60 80 100 120 -i d , drain current (a) 0 2 4 6 8 10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = -4.5v vgs = -10v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -2.0a -3.1a bottom -17a 1e-8 1e-7 1e-6 1e-5 1e-4 1e-3 1e-2 1e-1 time (sec) 0 10000 20000 30000 40000 50000 p o w e r ( w ) 2 4 6 8 10 12 14 16 18 20 -v gs, gate -to -source voltage (v) 0 2 4 6 8 10 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = -21a t j = 25c t j = 125c

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!" fig 17a. gate charge test circuit fig 17b. gate charge waveform fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit fig 19b. switching time waveforms fig 19a. switching time test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k s r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v &' 1 ( #
0.1 % + - t p v ( br ) dss i as v ds 90% 10% v gs t d(on) t r t d(off) t f

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!" pqfn part marking pqfn package details marking code (per marking spec.) xxxx xywwx xxxxx international rectifier logo part number date code assembly site code (per scop 200-002) pin 1 identifier lot code (eng mode - min. last 4 digits of eati #) (prod mode - 4 digits spn code) top marking (laser) 6 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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!" pqfn tape and reel note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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!" qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. higher msl ratings may be available for the specific package types listed here. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ msl2 (per jedec j-std-020d ??? ) rohs compliant qualification information ? qualification level consumer ?? (per jedec jesd47f ??? guidelines) yes moisture sensitivity level pqfn 5mm x 6mm ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments ? updated datasheet as per new ir corporate template ? updated data sheet with latest pqfn tape and reel diagram. revision history 8/19/2014

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