excelics EPA160A/EPA160Av data sheet high efficiency heterojunction power fet +31.0dbm typical output powe r 8.5db typical power gain for EPA160A and 10.0db for EPA160Av at 18ghz 0.3 x 1600 micron recessed ?mushroom? gate si 3 n 4 passivation advanced epitaxial doping profile provides high power efficiency, lineari ty and reliability EPA160Av with via hole source grounding idss sorted in 40ma per bin range electrical characteristics (t a = 25 o c) symbols parameters/ test conditions EPA160A EPA160Av unit min typ max min typ max output power at 1db compression f=12ghz 31.0 31.0 p 1db vds=8v, ids=50% idss f=18ghz 29.0 31.0 29.0 31.0 dbm gain at 1db compression f=12ghz 9.5 11.5 10.0 12.0 g 1db vds=8v, ids=50% idss f=18ghz 8.5 10.0 db gain at 1db compression pae vds=8v, ids=50% idss f=12ghz 45 46 % idss s aturated drain current vds=3v, vgs=0v 290 480 660 290 480 660 ma gm transconductance vds=3v, vgs=0v 320 500 320 500 ms vp pinch - off voltage vds=3v, ids=4.5ma - 1.0 - 2.5 - 1.0 - 2.5 v bvgd drain breakdown voltage igd=1. 6ma - 11 - 15 - 11 - 15 v bvgs source breakdown voltage igs=1.6ma - 7 - 14 - 7 - 14 v rth thermal resistance (au - sn eutectic attach) 30 22 o c/w maximum ratings at 25 o c symbols parameters EPA160A EPA160Av absolute 1 continuous 2 absolute 1 contin uous 2 vds drain - source voltage 12v 8v 12v 8v vgs gate - source voltage - 8v - 3v - 8v - 3v ids drain current idss 475ma idss 625ma igsf forward gate current 80ma 14ma 80ma 14ma pin input power 28dbm @ 3db compression 28dbm @ 3db compression tch channel tem perature 175 o c 150 o c 175 o c 150 o c tstg storage temperature - 65/175 o c - 65/150 o c - 65/175 o c - 65/150 o c pt total power dissipation 4.5w 3.8w 6.0w 5.0w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of th e above ratings may reduce mttf below design goals. excelics semiconductor, inc., 2908 scott blvd., santa clara, ca 95054 phone: (408) 970 - 8664 fax: (408) 970 - 8998 web site: www.excelics.com chip thickness: 75 20 microns all dimensions in microns : via hole no via hole for EPA160A
EPA160A/EPA160Av d ata sheet high efficiency heterojunction power fet EPA160A s - parameters EPA160A 8v, 1/2 idss freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang (ghz) mag ang mag ang mag ang mag ang 1.0 0.915 - 119.9 14.906 114.4 0.027 31.0 0.302 - 128.9 21.0 0.932 155.6 0.642 - 5.2 0.035 25.7 0.744 - 175.4 2.0 0.907 - 149.2 8.322 96.0 0.0 29 19.1 0.331 - 146.1 22.0 0.932 150.8 0.601 - 8.9 0.035 26.0 0.747 - 174.5 4.0 0.907 - 168.1 4.370 77.6 0.031 14.5 0.362 - 151.0 24.0 0.932 143.6 0.526 - 16.4 0.040 27.1 0.778 - 175.2 6.0 0.908 - 180.0 2.898 63.8 0.030 14.2 0.411 - 150.0 26.0 0.928 139.3 0.460 - 23.2 0.043 28.0 0.783 - 179.1 8.0 0.912 174.7 2.172 52.5 0.030 16.0 0.448 - 152.1 28.0 0.917 135.6 0.403 - 31.9 0.049 25.7 0.820 170.8 10.0 0.918 170.0 1.693 41.7 0.028 17.0 0.498 - 155.7 30.0 0.917 133.4 0.350 - 39.1 0.051 20.1 0.834 164.0 12.0 0.923 165.9 1.349 31.4 0.028 21.7 0.549 - 160.3 32.0 0.912 128.2 0.294 - 46.1 0.048 19.9 0.865 162.3 14.0 0.931 162.9 1.084 22.4 0.028 23.4 0.601 - 162.8 34.0 0.915 123.6 0.255 - 50.3 0.048 23.0 0.876 163.9 16.0 0.936 160.3 0.896 13.7 0.028 25.0 0.658 - 166.7 36.0 0.942 126.8 0.223 - 52.3 0.048 22.2 0.869 162.9 18.0 0.941 159.3 0.761 5.9 0.029 25.3 0.697 - 170.4 38.0 0.957 129.8 0.212 - 53.8 0.055 17.0 0.872 158.9 20.0 0.936 158.5 0.675 - 2.0 0.031 25.6 0.725 - 175.6 40.0 0.952 138.3 0.205 - 60.1 0.055 4.9 0.843 147.4 epa1 60av 8v, 1/2 idss freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang (ghz) mag ang mag ang mag ang mag ang 1.0 0.922 - 115.7 13.969 116.1 0.027 30.9 0.271 - 114.5 21.0 0.957 163.3 0.582 - 11.9 0.023 5.0 0.766 - 179.4 2.0 0.914 - 146.8 7.872 96.1 0.031 17.2 0.299 - 134.2 22.0 0.956 162.5 0.536 - 15.4 0.024 4.2 0.786 179.1 4.0 0.917 - 165.9 4.057 76.9 0.030 7.9 0.341 - 140.5 24.0 0.954 159.0 0.452 - 22.5 0.024 8.6 0.821 176.3 6.0 0.923 - 176.7 2.690 63.0 0.029 4.3 0.393 - 140.1 26.0 0.953 158.6 0.384 - 30.1 0.026 10.9 0.844 169.1 8.0 0.929 - 177.6 2.027 51.5 0.027 4.6 0.430 - 148.0 28.0 0.932 153.0 0.335 - 37.8 0.026 11.9 0.880 165.4 10.0 0.930 - 178.2 1.596 40.1 0 .025 4.2 0.485 - 157.8 30.0 0.918 146.4 0.295 - 46.5 0.028 9.1 0.899 161.7 12.0 0.936 175.2 1.273 28.3 0.023 1.8 0.556 - 161.5 32.0 0.877 145.0 0.262 - 56.0 0.027 - 0.3 0.949 153.2 14.0 0.941 171.3 1.025 17.7 0.021 1.5 0.626 - 167.2 34.0 0.934 144.2 0.229 - 63. 9 0.024 - 3.7 0.896 146.3 16.0 0.950 167.4 0.833 8.1 0.021 2.2 0.688 - 170.1 36.0 0.968 144.4 0.214 - 69.5 0.025 - 6.0 0.916 141.6 18.0 0.953 168.3 0.695 0.3 0.022 3.2 0.732 - 176.3 38.0 0.985 146.4 0.201 - 74.3 0.028 - 22.8 0.952 137.4 20.0 0.955 165.1 0.597 - 7.2 0.022 3.0 0.768 - 177.8 40.0 0.986 146.4 0.189 - 77.5 0.035 - 40.3 0.952 137.2 note: the data included 0.7 mils diameter au bonding wires; 3 gate wires, 15 mils each; 3 drain wires, 20 mils each; 10 source wires, 7 mils each; no source wires for EPA160Av. p-1db & pae vs. vds 24 26 28 30 32 34 36 38 40 4 5 6 7 8 drain-source voltage (v) p-1db (dbm) 10 15 20 25 30 35 40 45 50 pae (%) f = 12 ghz ids = 50% idss pout & pae vs. pin 0 10 20 30 40 50 -5 0 5 10 15 20 25 pin (dbm) pout (dbm) or pae (%) f = 12 ghz vds = 8v, ids = 50% idss pae pout
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