unisonic technologies co., ltd UFZ24N p ower mo sfet www.unisonic.com.tw 1 of 6 copyright ? 20 1 3 unisonic technologies co., ltd qw - r502 - 901.b 28a , 60 v n - channel power mosfet ? description the utc uf z24n is an n - channel power mosfet, it uses utc?s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge. the utc uf z24n is suitable fo r all commercial - industrial applications, etc . ? features * r ds( on ) <0.07 ? @v gs = 10v , i d = 1 0 a * high switching speed * low gate charge ? symbol g (1) d (2) s (3) to-220 1 to-252 to-251 1 1 ? ordering information order ing number package pin assign ment packing lead free halogen free 1 2 3 UFZ24N l - t a 3 - t UFZ24N g - t a 3 - t to - 220 g d s tube UFZ24N l - t m 3 - t UFZ24N g - t m 3 - t to - 251 g d s tube UFZ24N l - tn3 - t UFZ24N g - tn3 - t to - 252 g d s tube UFZ24N l - tn3 - r UFZ24N g - tn3 - r to - 252 g d s tape reel note : pin assignment: g: gate d: drain s: source UFZ24Nl-ta3-t (1)packing type (2)package type (3)lead free (1) t: tube, r: tape reel (2) ta3: to-220, tm3: to-251, tn3: to-252 (3) l: lead free, g: halogen free
UFZ24N p ower mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw - r502 - 901.b ? abso lute maximum ratings parameter symbol ratings unit drain - source voltage v dss 55 v gate - source voltage v gss 20 v drain current continuous t c =25c i d 17 a t c =100c 12 a pulsed (note 1) i dm 68 a avalanche current (note 1) i ar 10 a avalanche energy single pulsed (note 2) e as 71 mj repetitive (note 1) e ar 4.5 mj peak diode recovery dv/dt (note 3) dv/dt 5.0 v/ns power dissipation ( t c =25c ) to - 220 p d 73 w to - 251/to - 252 46 w linear derating factor 0.30 w/c junction temperature t j - 55~+175 c storage temperature range t stg - 55~+175 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. ? thermal characteristics parameter symbol rating unit junction to ambient to - 220 ja 62 .5 c /w to - 251/to - 252 100 c /w junction to case to - 220 jc 1.71 c /w to - 251/to - 252 2.7 c /w note s : 1. repetitive rating: pulse width limited by maximum junction tempe rature. 2. l=1.0mh, i as =10a, v dd =25v, r g =25?, starting t j =25c. 3. i sd 10a, di/dt 280a/s, v dd bv dss , starting t j 17 5c.
UFZ24N p ower mosfet unisonic technologies co., ltd 3 of 6 www.uniso nic.com.tw qw - r502 - 901.b ? electrical character istics ( t j =25 c , unless otherwise specified ) parameter symbol test conditions min typ max unit off character istics drain - source breakdown voltage bv dss i d = 250 a, v gs =0v 55 v drain - source leakage current i dss v ds = 55 v, v gs =0v 25 a gate - source leakage current forward i gss v gs = + 2 0v, v ds =0v + 10 0 na reverse v gs = -2 0v, v ds =0v -100 na on characteristics gate threshold voltage v gs (th) v ds =v gs , i d =250a 2 .0 4 .0 v static drain - source on- state resistance (note 2 ) r ds( on ) v gs =10v, i d = 1 0 a 0.0 7 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 370 pf output capacitance c oss 140 pf reverse transfer capacitance c rss 65 pf switching parameters total gate charge q g v gs =10v, v ds = 44 v, i d = 10a (note 4) 20 nc gate to s ource charge q gs 5.3 nc gate to drain charge q gd 7.6 nc turn - o n delay time t d(on) v dd = 28 v, i d = 10 a, r g =2 4 ? , r d =2.6 ? (note 4) 4.9 ns rise time t r 34 ns turn - o ff delay time t d(off) 19 ns fall - time t f 27 ns source - drain diode ratings a nd characteristics maximum body - diode continuous current i s 17 a maximum body - diode pulsed current (note 1) i sm 68 a drain - source diode forward voltage (note 2 ) v sd t j =25c, i s = 10 a, v gs =0v 1. 3 v body diode reverse recovery time t rr i f = 10 a, t j =2 5c , d i /dt=100a/s 56 83 ns body diode reverse recovery charge (note 2 ) q rr 120 180 n c note s : 1. repetitive rating: pulse width limited by maximum junction temperature . 2 . puls e test: pulse width 300s, duty cycle 2% .
UFZ24N p ower mosfet unisonic technologies co., ltd 4 of 6 www.uniso nic.com.tw qw - r502 - 901.b ? test circuit s and waveforms 50k? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma v gs dut r g v ds r d resistive switching test circuit resistive switching waveforms v ds v gs 90% 10% t d(on) t r t f t d(off) 10v t on t off 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
UFZ24N p ower mosfet unisonic technologies co., ltd 5 of 6 www.uniso nic.com.tw qw - r502 - 901.b ? test circuit s and waveforms (cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv /dt v dd v sd body diode forward voltage drop i fm , body diode forward current peak diode recovery dv /dt test circuit and waveforms
UFZ24N p ower mosfet unisonic technologies co., ltd 6 of 6 www.uniso nic.com.tw qw - r502 - 901.b ? typical characteristics drain current vs . drain -source breakdown voltage drain current , i d (a) drain -source breakdown voltage , bv dss (v) 0.5 0 drain current vs . gate threshold voltage drain current , i d (a) gate threshold voltage, v th (v) 1.5 2 3 1 2.5 0 50 100 150 200 250 300 0 20 40 60 80 0 50 100 150 200 250 300 drain -source on-state resistance characteristics drain current , i d (a) drain to source voltage , v ds (v) 0 5 12.5 0 0.06 0.12 0.18 0.24 v gs =10v, i d =10a 2.5 7.5 10 0.36 0 drain current vs . source to drain voltage source to drain voltage, v sd (v) drain current , i d (a) 0.2 0.4 0.6 0.8 1.0 0 2 4 6 10 12 0.3 8 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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