inchange semiconductor isc product specification isc silicon npn power transistors D44VH series description low saturation voltage fast switching speed complement to type d45vh series applications designed for high-speed switching applications, such as switching regulators and high frequency inverters. they are also well-suited for drivers for high power switching circuits. absolute maximum ratings(t a =25 ) symbol parameter value unit D44VH 1 50 D44VH 4 70 D44VH 7 80 v cev collector-emitter voltage D44VH 10 100 v D44VH 1 30 D44VH 4 45 D44VH 7 60 v ceo collector-emitter voltage D44VH 10 80 v v ebo emitter-base voltage 5 v i c collector current-continuous 15 a i cm collector current-peak 20 a p c collector power dissipation @t c =25 83 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.5 /w r th j-a thermal resistance,junction to ambient 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors D44VH series electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit D44VH 1 30 D44VH 4 45 D44VH 7 60 v ceo(sus) collector-emitter sustaining voltage D44VH 10 i c = 25ma ;i b = 0 b 80 v v ce (sat)-1 collector-emitter saturation voltage i c = 8a ;i b = 0.4a 0.4 v v ce (sat)-2 collector-emitter saturation voltage i c = 15a ;i b = 3a;t c =100 0.8 v v be (sat) base-emitter saturation voltage i c = 8a ;i b = 0.4a i c = 8a ;i b = 0.4a;t c =100 1.2 1.1 v i cev collector cutoff current v ce =ratedv ce ;v be( off ) =4v v ce =ratedv ce ;v be( off ) =4v;t c =100 10 100 a i ebo emitter cutoff current v eb = 7v; i c = 0 10 a h fe-1 dc current gain i c = 2a ; v ce = 1v 35 h fe-2 dc current gain i c = 4a ; v ce = 1v 20 c ob output capacitance i e = 0;v cb = 10v,f test = 1.0mhz 120 pf f t current-gain?bandwidth product i c = 0.1a;v ce = 10v;f test = 20mhz 50 mhz switching times t d delay time 50 ns t r rise time 250 ns t s storage time 700 ns t f fall time i c = 8a; i b1 = -i b2 = 0.8a v cc = 20v 90 ns isc website www.iscsemi.cn
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