http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente SUM6K1N 0.1a , 30v , r ds(on) 8 ?? n-channel enhancement mode mosfet 24-sep-2013 rev. b page 1 of 3 rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sot-363 saves board space ? fast switching speed ? high performance trench technology application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. marking package information package mpq leader size sot-363 3k 7 inch absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gss 20 v continuous drain current 1 i d 0.1 a power dissipation 1 p d 0.15 w maximum junction to ambient 1 r ? ja 833 c / w operating junction and st orage temperature range t j , t stg 150, -55~150 c sot-363 millimete r millimete r ref. min. max. ref. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k 8 e 1.10 1.50 l 0.650 typ. f 0.10 0.35 b l f h c j d g k a e k1
http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente SUM6K1N 0.1a , 30v , r ds(on) 8 ?? n-channel enhancement mode mosfet 24-sep-2013 rev. b page 2 of 3 electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage v ds 30 - - v i d =10ua, v gs =0 zero gate voltage drain current i dss - - 1 ua v ds =30v, v gs =0 gate-source leakage current i gss - - 1 ua v ds =0, v gs =20v gate-threshold voltage v gs(th) 0.8 - 1.5 v v ds =3v, i d =100ua - - 8 v gs =4v, i d =10ma drain-source on-resistance r ds(on) - - 13 ? v gs =2.5v, i d =1ma forward transconductance g fs 20 - - s v ds =3v, i d =10ma dynamic 1 input capacitance c iss - 13 - output capacitance c oss - 9 - reverse transfer capacitance c rss - 4 - nc v ds =5v, v gs =0, f=1mhz turn-on delay time t d(on) - 15 - rise time t r - 35 - turn-off delay time t d(off) - 80 - fall time t f - 80 - ns v dd =5v, v gs =5v, r g =10 ? , r l =500 ? , i d =10ma notes: 1. these parameters have no way to verify
http://www.secosgmbh.com/ any changes of specification will not be informed individually. elektronische bauelemente SUM6K1N 0.1a , 30v , r ds(on) 8 ?? n-channel enhancement mode mosfet 24-sep-2013 rev. b page 3 of 3 characteristic curves
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