spc6601 description applications the spc6601 is the n- a nd p-channel enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance. these devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration( tsop? 6p ) part marking ? n-channel 30v/2.8a,r ds(on) = 68m ? @v gs =10v 30v/2.3a,r ds(on) = 78m ? @v gs =4.5v 30v/1.5a,r ds(on) = 108m ? @v gs =2.5v ? p-channel -30v/-2.8a,r ds(on) =105m ? @v gs =- 10v -30v/-2.5a,r ds(on) =120m ? @v gs =-4.5v -30v/-1.5a,r ds(on) =150m ? @v gs =-2.5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? tsop? 6p package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g1 gate 1 2 s2 source 2 3 g2 gate 2 4 d2 drain 2 5 s1 source 1 6 d1 drain1 ordering information part number package part marking SPC6601ST6RG tsop- 6p 01yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPC6601ST6RG : tape reel ; pb ? free absoulte maximum ratings (t a =25 unless otherwise noted) typical parameter symbol n-channel p-channel unit drain-source voltage v dss 30 -30 v gate ?source voltage v gss 12 12 v t a =25 2.8 -2.8 continuous drain current(t j =150 ) t a =70 i d 2.3 -2.1 a pulsed drain current i dm 10 -8 a continuous source current(diode conduction) i s 1.25 -1.4 a t a =25 1.15 power dissipation t a =70 p d 0.75 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 t 10sec 50 52 thermal resistance-junction to ambient steady state r ja 90 90 /w spc6601 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static v gs =0v,i d = 250ua n-ch 30 drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua p-ch -30 v ds =v gs ,i d =250ua n-ch 0.8 1.6 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua p-ch -0.4 -1.0 v v ds =0v,v gs =12v n-ch 100 gate leakage current i gss v ds =0v,v gs =12v p-ch 100 na v ds = 24v,v gs =0v n-ch 1 v ds =-24v,v gs =0v p-ch -1 v ds = 24v,v gs =0v t j =55 n-ch 10 zero gate voltage drain current i dss v ds =-24v,v gs =0v t j =55 p-ch -10 ua v ds 5v,v gs = 10v n-ch 6 on-state drain current i d(on) v ds -5v,v gs =-10v p-ch -6 a v gs = 10v,i d = 2.8a n-ch 0.048 0.068 v gs =-10v,i d =-2.8a p-ch 0.077 0.105 v gs = 4.5v,i d = 2.3a n-ch 0.054 0.078 v gs =-4.5v,i d =-2.5a p-ch 0.092 0.120 v gs = 2.5v,i d = 1.5a n-ch 0.079 0.108 drain-source on-resistance r ds(on) v gs =-2.5v,i d =-1.5a p-ch 0.118 0.150 ? v ds =4.5v,i d =2.8a n-ch 4.6 forward transconductance gfs v ds =-10v,i d =-2.8a p-ch 4 s i s = 1.25a,v gs =0v n-ch 0.8 1.2 diode forward voltage v sd i s =-1.2a,v gs =0v p-ch -0.8 -1.2 v dynamic n-ch 4.2 6 total gate charge q g p-ch 5.8 n-ch 0.6 gate-source charge q gs p-ch 0.8 n-ch 1.5 gate-drain charge q gd n-channel v ds =15 ,v gs =4.5v , i d 2.0a p-channel v ds =-15v ,v gs =-4.5v , i d -2.0a p-ch 1.5 nc n-ch 2.5 t d(on) p-ch 6 n-ch 2.5 turn-on time t r p-ch 3.9 n-ch 20 t d(off) p-ch 40 n-ch 4 turn-off time t f n-channel v dd =15 , r l =10 ? v gen =10v , r g =3 ? p-channel v dd =-15v , r l =15 ? v gen =-10v , r g =3 ? p-ch 15 ns spc6601 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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